Micron does more than design and manufacture NAND flash memory. We innovate to solve design challenges through better engineering across a spectrum of NAND products — covering everything from mobile to embedded to data center storage applications.
SLC NAND
MLC NAND
TLC NAND
QLC NAND
SLC NAND flash memory
One bit per cell; high performance and write endurance; designed for high-end, high-density, mission-critical systems where NAND high performance standards and reliability are required and cost reduction is not a major driver.
With two bits per cell, multi-level cell (MLC) NAND flash memory has a good balance of performance and write endurance for a wide range of cost-sensitive, high-density applications.
Micron triple-level cell (TLC) NAND flash memory delivers high performance for storage devices ranging from PCs, data centers, mobile devices, automobiles and into the AI-enabled cloud. With industry leading performance and density Micron TLC NAND is an advanced building block for cutting-edge storage.
Micron quad-level cell (QLC) NAND delivers an increased density compared to SLC, MLC and TLC NAND flash. With up to 2Tb QLC NAND die, Micron QLC NAND provides market-leading density and best-in-class performance, enabling greater storage density and design flexibility than ever before.
