High-bandwidth memory (HBM) is the fastest DRAM on the planet, designed for applications that demand the maximum possible bandwidth between memory and processing. This performance is achieved by integrating TSV stacked memory die with logic in the same chip package. Micron’s extensive history in advanced memory packaging and stacking has made for a seamless entrance into the HBM market. Micron is committed to providing Ultra-Bandwidth Solutions, including HBM2E and future HBM technology.
Solving the toughest challenges requires a compute foundation with the fastest memory in the world. Micron’s HBM2E delivers the bandwidth, massive parallelism and power efficiency for next-generation data centers and high-performance compute systems.
Read our new Tech Brief for best practices from the Micron experts on how you and your ecosystem of integrators can achieve maximum performance from the highest-bandwidth DRAM in Micron’s Ultra-Bandwidth Solutions portfolio.
This infographic gives an overview of HBM2E – why it is necessary for applications like AI and HPC and why being closer to the CPU matters for ultra-bandwidth performance.