Micron mobile TLC 3D NAND memory technology delivers the speed and features that modern smartphones require, with high storage capacity and fast performance.
Augment your imagination
Today’s mobile devices are smarter than ever. Recent innovations are enabling entirely new ways of interacting with smartphones, including advanced user authentication, AR, language recognition and more personalized imaging capabilities. These user experiences are made possible by artificial intelligence (AI) engines embedded inside of today’s smartphones.
But these AI engines aren’t useful unless they’re fed with really fast local data. Micron’s innovative 232-layer triple-level cell (TLC) 3D NAND technology delivers the speed and features modern smartphones require, with dramatically higher storage capacity and blazing fast performance.
232-layer TLC 3D NAND technology with CMOS under Array technology doubles the storage density of previous-generation TLC 3D NAND while maintaining the same package size.
Industry-leading write performance
Micron’s 232-layer TLC 3D NAND products are significantly faster than previous-generation TLC 3D NAND.
UFS 2.1 High-Speed Gear 3 interface
Delivers 200% higher bandwidth versus e.MMC 5.1 and uses command queue technology to read and write commands simultaneously.
Improved reliability
Micron’s unique floating gate technology provides superior data retention compared to charge trap gates used by competitors. Floating gate technology uses isolated charge storage nodes for superior cell-to-cell charge isolation, delivering higher data retention and reliability.
Power efficiency
Our TLC 3D NAND uses a peak power management system to significantly reduce the memory peak power consumption in smartphones.
Design tools
Your single source for tools and resources needed to maximize Micron's products and solutions for your design needs.
