N25Q256A13ESF40G

Rev X

x.1= configuration. PP= 12, F8, SF.

This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics.

This technical note defines the industry standards for this testing, Micron's NOR Flash testing methodology, and the two key metrics used to measure NOR device failure: cycling endurance and data retention.

This technical note provides a description of the C library source code for Micron N25Q serial NOR Flash memory devices. Download the low-level driver described in this document here.

Explanation of Micron packaging labels and procedures.

Describes design considerations for bare die SiPs and MCMs.