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DRAM Components

DDR3 to DDR4 memory

DDR4 – Advantages of Migrating from DDR3

DDR4 is the next evolution in DRAM, bringing even higher performance and more robust control features while improving energy economy for enterprise, micro-server, tablet, and ultrathin client applications. The following table compares some of the key feature differences between DDR3 and DDR4.

Feature/Option DDR3 DDR4 DDR4 Advantage
 Voltage (core and I/O)  1.5V  1.2V  Reduces memory power demand
 VREF inputs  2 – DQs and CMD/ADDR  1 – CMD/ADDR  VREFDQ now internal
 Low voltage standard  Yes (DDR3L at 1.35V)  No  Memory power reductions
 Data rate (Mb/s)  800, 1066, 1333, 1600, 1866, 2133  1600, 1866, 2133, 2400, 2666, 3200  Migration to higher‐speed I/O
 Densities  512Mb–8Gb  2Gb–16Gb  Better enablement for large-capacity memory subsystems
 Internal banks  8  16  More banks
 Bank groups (BG)  0  4  Faster burst accesses
 tCK – DLL enabled  300 MHz to 800 MHz  667 MHz to 1.6 GHz  Higher data rates
t CK – DLL disabled  10 MHz to 125 MHz (optional)  Undefined to 125 MHz  DLL-off now fully supported
 Read latency  AL + CL  AL + CL  Expanded values
 Write latency  AL + CWL  AL + CWL  Expanded values
 DQ driver (ALT)  40Ω  48Ω  Optimized for PtP (point-to-point) applications
 DQ bus  SSTL15  POD12  Mitigate I/O noise and power
 RTT values (in Ω)  120, 60, 40, 30, 20  240, 120, 80, 60, 48, 40, 34  Support higher data rates
 RTT not allowed  READ bursts  Disables during READ bursts  Ease-of-use
 ODT modes  Nominal, dynamic  Nominal, dynamic, park  Additional control mode; supports OTF value change
 ODT control  ODT signaling required  ODT signaling not required  Ease of ODT control, allows non-ODT routing on PtP applications
 Multipurpose register (MPR)  Four registers – 1 defined, 3 RFU  Four registers – 3 defined, 1 RFU  Provides additional specialty readout

 

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