MT47H32M16NF-25E AAT

MT47H64M8, MT47H32M16

MT47H64M8, MT47H32M16

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2011/65/EU and 2015/863/EU, a.k.a. Restriction of Hazardous Substances (RoHS) Directive (Recast) without exemptions.

Company statement regarding REACH SVHC compliance

Rev. 2.1

Rev. 2.2

5.83

This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics.

This technical note focuses on the unique memory requirements of point-to-point design layouts and describes DDR2 features and functionality.

This technical note provides general guidelines for designing power circuitry for DDR2 memory; it includes the DDR2 voltage requirements and encompasses a sample reference design focused on the Texas Instruments Incorporated (TI) TPS51116 DDR2 memory power solution.

Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs.

Describes design considerations for bare die SiPs and MCMs.