MT47H128M4SH-25E

Orderable parts

MT47H128M4SH-25E:H

Specs

  • Chipset Validation
    N/A
  • Data Rate
    DDR2-667
  • Density
    512Mb
  • FBGA Code
    D9SBN
  • Op. Temp.
    0C to +85C
  • Part Status
    Contact Factory
  • PLP
    No
  • PLP Start Date
    N/A
  • Width
    x4

RoHS

China RoHS Certificate

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.
  • File Type: (PDF)
  • Updated: 12/2018

RoHS Certificate of Compliance

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2011/65/EU and 2015/863/EU, a.k.a. Restriction of Hazardous Substances (RoHS) Directive (Recast) without exemptions.
  • File Type: (PDF)
  • Updated: 12/2018

Technical Notes

TN-00-08: Thermal Applications

Describes some considerations in thermal applications for Micron memory devices
  • File Type: PDF
  • Updated: 2/15/2018

Bypass Capacitor Selection for High-Speed Designs

Describes bypass capacitor selection for high-speed designs.
  • File Type: PDF
  • Updated: 3/23/2011

Customer Service Notes

ESD Precautions for Die/Wafer Handling and Assembly

Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs.
  • File Type: PDF
  • Updated: 8/5/2010

Micron 95nm Legacy 256Mb and 512Mb DRAM Component Update

Describes certain legacy products.
  • File Type: PDF
  • Updated: 1/9/2015
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