MT46V64M8P-5B IT

2.0 (Die Rev. J)

2.3 (Die Rev. J)

This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics.

This technical note provides information on optimal wafer-thinning processes to meet specific customer requirements.

Provides a decoupling capacitor calculation for a DDR memory channel

Explanation of Micron packaging labels and procedures.

Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs.