A memory maker's perspective on advanced lithography for DRAM applications
This module presents the challenges and advancements in lithography for DRAM (Dynamic Random Access Memory) scaling. It covers the evolution of DRAM technology lithographic techniques over various nodes, and future prospects including the introduction of EUV (Extreme Ultraviolet) lithography and high-NA EUV. The discussion also includes the impact of these technologies on cost, patterning complexity, and process uniformity.
Presented at eBeam Initiative SPIE event - February 2026.
