Micron Enables Pervasive, Data-Driven Experiences

Backed by industry-leading technology, Micron is delivering a portfolio of products based on its 1-alpha (1α) DRAM and 176-layer 3D NAND technologies, enabling businesses around the globe to unleash incredibly rich data experiences and unrivaled productivity.
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Industry's first 1α DRAM technology

Micron's 1α node is the world's most advanced DRAM process technology, bringing greater reliability, higher memory density, improved power savings and best-in-class performance for applications across data center, automotive, intelligent edge, mobile and more. This technology also provides a solid foundation for future Micron product and memory innovations.

Discover 1α technology

Micron Delivers Industry’s First 1α DRAM Technology

Inside 1α — the World’s Most Advanced DRAM Process Technology

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Breakthrough 176-layer technology

The most technologically advanced NAND node in the market, Micron's industry-first 176-layer 3D NAND improves both read latency and write latency, enabling greater application performance across storage use cases spanning data center, intelligent edge and mobile devices.

Discover 176-layer NAND


Micron delivers the world's most advanced 176-layer NAND data center SSD with significant reduction in latency

Micron Transitions to Next-Generation Replacement Gate NAND Technology


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Turning process technology leadership to leading products across all markets

Micron delivers the data foundation for powering cloud and enterprise workloads while redefining the memory and storage hierarchy.

  • 1α DRAM — 40% higher memory density1 for feeding data-hungry workloads and expanding AI deployments
  • 176-layer 3D NAND — 35% improved read and write latency2 for accelerating application performance
  • 176-layer 3D NAND — 33% faster data transfer rates3 for faster server system bootup and application performance

Learn more about Micron's data center solutions 

1 40% improvement in memory density when compared to Micron's previous 1z DRAM node.

2 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. When compared to 128-layer replacement-gate NAND, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.

3 33% improvement when compared to Micron’s prior two generations of 3D NAND (96-layer NAND and 128-layer NAND), which featured a maximum of 1,200 MT/s data transfer rates.

 

Micron’s high-bandwidth, low-power memory and storage provide a critical data foundation for the intelligent edge.

  • 1α DRAM — The promise of industry-leading reliability, ruggedness and longevity for safety-critical embedded, automotive and industrial solutions
  • 176-layer 3D NAND — Future delivery of 1,600 MT/s data transfer rates for near instant-on response times for in-vehicle systems
  • 176-layer 3D NAND — Future delivery of 35% improved read latency and write latency1 will ease bottlenecks in AI industrial edge devices

Learn more about Micron's edge solutions for automotive

1 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. When compared to 128-layer replacement-gate NAND, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.

Micron's high-performance, high-capacity, power-efficient mobile memory and storage provide the data foundation for 5G- and AI-enabled mobile devices.

  • 1α low-power DRAM — 15% improved power savings1, allowing 5G mobile users to perform more tasks without sacrificing battery life
  • 176-layer 3D NAND — 15% faster mixed workload performance2 for ultra-fast mobile computing, enhanced AI inference, and graphic-rich, real-time multiplayer gaming
  • Multichip packages (MCPs) — High-performance, high-density, low-power memory and storage in a single compact package, enabling smartphones to handle data-intensive 5G workloads with greater speed and energy efficiency

Learn more about Micron's mobile solutions

1 15% power savings when compared to the previous 1z generation of Micron mobile DRAM.

2 15% faster mixed workload performance when compared to Micron’s previous generation universal flash storage 3.1-based multichip package using floating-gate 96-layer NAND.

Micron’s leading-edge memory and storage provide PC users from workstations to ultra-portables with greater performance, agility and security.

  • Micron high performance DDR5 DRAM – with the performance and bandwidth needed by latest-generation multi-core CPUs
  • 1α low-power DRAM — 15% improved power savings1, enabling high-performance computing in small notebook form factors without sacrificing battery life
  • Micron PCIe Gen4 SSDs — PCIe Gen4 for data-intensive applications and flexible form factors for cutting-edge designs

Learn more about Micron's Client solutions
Learn more about Micron’s new Client SSDs

115% power savings when compared to the previous 1z generation of Micron mobile DRAM.





Industry leaders share insights on emerging technologies and data-driven customer experiences.


AI, 5G, and IT: Key drivers for digital transformation

Linda Tsai discusses Advantech Industrial IoT solutions and collaboration with Micron to provide the trusted quality for innovative industrial applications..

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Advancing technologies for the next-generation data center

Robert Hormuth of AMD highlights the need for memory and storage advancement to meet growing data center requirements

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Enabling exceptional smartphone user experiences

JC Hsu shares how customer focus and close collaboration with mobile ecosystem partners including Micron lead to innovation and superior customer experiences

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Enabling safer streets with AI and network-based vision

Bruno Fernandez Ruiz describes how Nexar gathers the inputs from millions of autos and applies edge-based AI to enable innovations in safety and smart transportation

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Advancing 3D vision through advanced software

Jake Hillard shows how Red Leader's edge computing platform is transforming 3D image sensing with 10x higher resolution, programmability and scale

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Taiwan and leadership in the worldwide semiconductor industry

Global, pervasive experiences require an innovative ecosystem, in which Micron and Taiwan both play critical roles

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