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    Nand flash

    QLC NAND flash memory​

    Micron quad-level cell (QLC) NAND delivers an increased density compared to SLC, MLC and TLC NAND flash. With up to 2Tb QLC NAND die, Micron QLC NAND provides market-leading density and best-in-class performance, enabling greater storage density and design flexibility than ever before.

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    G9 QLC NAND flash memory​

    Experience the future of SSD performance with the industry’s first ninth-generation QLC NAND shipping to OEMs in an SSD. Featuring the first 2Tb G9 QLC NAND die used in an SSD, this SSD sets new standards for performance.

    Its six-plane NAND architecture allows for higher degrees of parallelism, enabling more read/write commands to be issued simultaneously, significantly boosting performance. With an I/O transfer rate of up to 3.6 GB/s, it delivers exceptional storage performance.1,2​

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    Micron G9 QLC NAND

    G8 QLC NAND flash memory​

    After delivering the industry’s first and densest QLC NAND with G7 NAND, Micron does it again and is now shipping another world's first — G8 QLC NAND.1

    Built with QLC category-leading replacement gate architecture that delivers the industry’s best storage density and enables use cases across client, mobile, automotive, data center and enterprise storage.

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    Micron G8 QLC NAND

    1. Competitors are defined as SK Hynix, Solidigm, Kioxia, WD and Samsung.​
    2. NAND comparisons are based on publicly available information and Micron engineering data available at product launch for currently in production NAND per footnote 1.​

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