Micron’s leadership 176-layer 3D NAND is a critical foundation for end-to-end storage technology innovation.
Micron’s 176-layer NAND serves as an essential and powerful building block in technologists’ toolboxes across a broad array of sectors. Sharpen your competitive edge with:
Replacement-gate architecture combines charge traps with CMOS-under-array (CuA) design
25% faster read and write times* mean quicker booting and increased application responsiveness.
*Comparison is based on Micron’s 128-layer replacement-gate NAND.
Wide selection of interfaces, capacities, form factors, and TLC or QLC provide ideal options for mobile, automotive, client, consumer and data center applications.
The Micron 2400 SSD with NVMe™ is the world’s first 176-layer PCIe Gen4 QLC SSD. The 2400 brings industry-leading storage densities to enable flexible OEM solution designs.
The Micron 7450 SSD with NVMe is the world’s most advanced 176-layer NAND data center SSD, delivering exceptional latency and PCIe Gen4 with extensive deployment options.
By reducing cell-to-cell capacitive coupling issues and mitigating resistance with a metal control gate, Micron’s replacement-gate (RG) NAND is part of a cutting-edge, high-capacity data storage system providing fast, smooth and superior performance.