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Our Innovation

For nearly 40 years, Micron has been instrumental to the world’s most significant technology advancements and market transitions. From building the world’s first 256K DRAM facility in 1984 to introducing the revolutionary 3D XPoint technology in 2015, we have established an impressive track record of invention and technology breakthroughs. Our team of visionaries and trailblazers has redefined innovation — designing and building advanced memory and semiconductor technologies that transform what’s possible.

Our History of Innovation

1978: Micron Technology is Founded

Micron Technology Is Founded

Micron started as a four-person semiconductor design company in the basement of a Boise, Idaho dental office. Micron’s first contract was for the design of a 64K memory chip for Mostek Corporation.

1979: Engineers Finalize Design for a 64K DRAM

Micron Engineers Finalize 64K DRAM Design

While not the first company to make 64K DRAM, Micron’s engineers created a newer, smaller version that was lauded as the smallest 64K DRAM design in the world. This innovative design led to high-volume manufacturing of the company’s first 64K product in 1981.

1981: Micron Ships its First 64K DRAM Product

Micron Ships its First 64K DRAM Product

Micron’s 64K DRAM was the first product manufactured at the company’s newly completed fabrication facility in Boise, Idaho. Micron sold its 64K DRAM into many of the first mass-produced personal computers, including the Commodore 64 home computer.

1984: Micron Introduces World’s Smallest 256K DRAM Chip

Micron Unveils World’s Smallest 256K DRAM Chip

In addition to being introduced as the world’s smallest 256K DRAM die, this chip also represented an industry milestone in DRAM density. By using bigger and easier-to-read memory cells, the 256K DRAM was a springboard to future efficiency and profitability for the young memory startup.

1988: Micron Reaches 1-Megabit DRAM Milestone

Micron Brings 1-Megabit DRAM to Market

A milestone in density, the 1Mb DRAM became a staple for main memory in PCs and graphics cards during the late 1980s and 1990s. Micron’s 1Mb DRAM enabled high-capacity SIMM modules that supported PCs equipped with Microsoft’s new Windows OS.

1988: Micron Introduces First Video RAM and Fast Static RAM Products

Micron Introduces First Video RAM and Fast Static RAM Products

The introductions of 256K video RAM and fast static RAM broadened Micron’s product portfolio beyond traditional DRAM, enabling Micron to become a player in differentiated memory types.

1999: Micron 16-megabit DRAM Enables PCs with New Windows 3.1

Micron 16-megabit DRAM Enables PCs With New Windows 3.1

A milestone in density, the 16-megabit DRAM replaced Micron's mainstay 4-megabit DRAM lineup. These higher capacity chips coincided with Microsoft’s release of Windows 3.1, which drove minimum PC RAM requirements to 1 megabyte.

1999: Micron Produces Industry’s First Double-Data-Rate (DDR) DRAM

Micron Produces Industry’s First DDR DRAM

Micron’s demonstration of the Samurai double data rate (DDR) chipset proved that DDR memory could deliver performance equivalent to the competing Direct RDRAM solution, but at a much lower cost. Ultimately, DDR would become the undisputed industry-standard interface for high-performance DRAM.

2000: Micron Invents QDR SRAM, Doubling Memory Bandwidth

Micron's Quad Data Rate SRAM Doubles Memory Bandwidth

Micron’s innovative quad data rate (QDR) architecture effectively doubled the SRAM bandwidth for communication applications such as switches and routers. This unique design used two ports to independently run at a double data rate, resulting in four data items per clock cycle.

2002: Micron Demonstrates Industry's First 1-Gigabit DDR on 110nm Process

Micron Demonstrates Industry's First 1Gigabit DDR on 110nm Process

Micron’s 1Gb DDR was built on the most advanced process technology in the world (110nm), outpacing semiconductor giants Intel and AMD who were still on 130nm. This chip established Micron as the memory industry leader in both density and interface performance.

2003: Micron Develops 1.3-megapixel CMOS Image Sensor

Micron Develops 1.3-Megapixel CMOS Image Sensor

Micron’s entry into image sensors established the company as an innovator capable of making CMOS technology with image quality rivaling charge coupled device (CCD) sensors. Today, CMOS sensors are the standard in digital cameras of all types, from smartphones to high-end professional gear.

2004: Micron Unveils Pseudo-Static RAM (PSRAM) for Cell Phones

Micron Unveils Pseudo-Static RAM for Cell Phones

Pseudo-Static SRAM (PSRAM) delivered the high bandwidth, capacity and low power necessary to replace SRAM in mobile devices. Micron’s leadership in PSRAM paved the way for future low-power DRAM products that are used in mobile devices today.

2004: Micron Develops the Industry’s First 6F2 DRAM Cell

Micron Develops the Industry’s First 6F2 DRAM Cell

Micron developed an entirely new 6F2 cell architecture to replace the industry’s 8F2 cell standard, enabling approximately 25% more bits per wafer. This higher-density design enabled Micron to reclaim the title as the industry’s most cost-competitive memory producer.

2005: Micron Introduces High-Capacity, Low-Power Mobile LPDRAM

Micron Introduces High-Capacity, Low-Power Mobile LPDRAM

Micron’s 16MB DRAM — built on a tiny 33mm2 die — enabled higher capacity and lower power in a small footprint. As cell phones transitioned from simple voice to multimedia, LPDRAM requirements increased dramatically, a trend that continues in smartphones today.

2006: Micron Develops Mongoose Tester for Improved Accuracy, Lower Costs

Micron Develops Mongoose Tester for Improved Accuracy, Lower Costs

This internally-developed tester is used exclusively by Micron to increase DRAM test throughput and accuracy. Micron continues to evolve this tester platform to meet new and future memory standards.

2006: Micron unveils the world's highest-density server memory module

Micron Unveils the World's Highest-Density Server Memory Module

Micron’s 16GB DDR2 module served the fast-growing server memory footprint of the 2000s as the rise of virtualization technology packed multiple applications onto single servers. These high-density server modules are a trend that continues today.

2007: Micron Develops Industry’s First Pitch-Doubled NAND

Micron Develops Industry’s First Pitch-Doubled NAND

Pitch-doubling was introduced as a lithography technique for increasing bit density without a lithography change. This method involved the separation of bit lines into first and second metal layers, allowing Micron to deliver a 16Gb MLC device on existing 50nm technology.

2007: Micron Introduces Low-Latency, Low-Power RLDRAM-2 Memory

Micron Advances Low-Latency, Low-Power RLDRAM 2 Memory

Originally designed for networking, this high-performance DRAM quickly became the solution of choice for an unexpected application: DLP-based TVs and projectors. While density has increased over time, reduced latency DRAM remains a staple in networking applications today.

2007: Micron and Intel First to Deliver Sub-40nm NAND Flash Memory

Micron and Intel First to Deliver Sub-40nm NAND Flash Memory

This multi-level cell (MLC) NAND flash device was the industry’s first monolithic 32Gb NAND, which enabled high-density solid state storage in very small form factor devices, including digital cameras, personal music players and digital camcorders.

2009: Micron Ships RealSSD™ C300, Industry’s Fastest Client SSD

Micron Ships RealSSD™ C300, Industry’s Fastest Client SSD

At the time of launch, the C300 was the industry’s fastest SSD for notebook and desktop PCs. With support for the SATA III interface, this SSD delivered 6 Gb/s which significantly boosted throughput speeds for data transfers, application loads and boot times.

2011: Micron and Intel Announce World’s First 20nm MLC NAND

Micron and Intel Announce World’s First 20nm MLC NAND

This 128Gb MLC memory could store 1Tb of data in a single fingertip-size package with just eight die, setting a new storage benchmark. Additionally, this memory was the first to use an innovative planar cell structure that overcame the scaling constraints of standard floating-gate NAND.

2011: Micron Debuts Hybrid Memory Cube (HMC) Architecture

Micron Debuts Hybrid Memory Cube (HMC) Architecture

Hybrid Memory Cube (HMC) is a revolutionary DRAM architecture that combines high-speed logic with a stack of memory die using through-silicon via (TSV) technology. Learnings from HMC continue to be applied towards future, emerging memory technologies.

2012: Micron Announces Industry’s First 2.5-inch PCIe Enterprise SSD

Micron Produces Industry’s First 2.5-Inch PCIe Enterprise SSD

This solution combined a high-performance PCI Express interface with a hot-swappable 2.5-inch form factor and custom Micron controller, creating new options for enterprise performance scalability and serviceability.

2012: Micron Creates New Low Power DRAM Category for Ultrabooks™

Micron Creates New Low-Power DRAM Category for Ultrabook™  Devices

DDR3L-RS memory established a new category of “reduced-power” DRAM solutions, enabling longer battery life for a new generation of high-performance, ultrathin devices like laptops, tablets, and Ultrabook systems.
*Ultrabook is a trademark of Intel Corporation or its subsidiaries in the U.S. and/or other countries.

2013: Micron Delivers World’s Smallest 16nm NAND Flash Device

Micron Delivers World’s Smallest 16nm NAND Flash Device

Micron’s 16nm process technology delivered 16GB of storage on a single die, the highest-density planar NAND flash memory ever developed. Using this process, a single 300mm wafer can create nearly 6TB of storage.

2014: Micron Announces Industry's 1st Monolithic 8Gb DDR3 SDRAM

Micron Leads Industry With First Monolithic 8Gb DDR3 SDRAM

This single component provided a significant density increase to 1 gigabyte on a single chip. This higher density enables cost-effective, high-capacity solutions optimized to support large-scale, data-intensive workloads.

2015: Micron and Intel Unveil 3D NAND, the Highest-Density Flash Ever Developed

Micron and Intel Unveil 3D NAND, the Highest-Density Flash Ever Developed

3D NAND marks a significant inflection point in the future of semiconductors. By stacking layers of data storage cells vertically, 3D NAND delivers three times higher capacity than planar NAND technology.

2015: Micron and Intel Announce Breakthrough Memory 3D XPoint™ Technology

Micron and Intel Announce Breakthrough 3D XPoint™ Technology

3D XPoint represents a major breakthrough in memory process technology and is the first new memory category in decades. This non-volatile memory is up to 1,000 times faster and has up to 1,000 times greater endurance than NAND.

2016: Micron Introduces GDDR5X, the World’s Fastest Graphics DRAM

Micron Introduces GDDR5X, the World’s Fastest Graphics DRAM

This memory’s record-high, per-pin data rate enables massive graphics performance and GPGPU computation capability. GDDR5X offers up to 14Gb/s data rates, essentially doubling the bandwidth of prior GDDR5 memory.


3D XPoint Technology

Breakthrough Nonvolatile Memory Technology

3D XPoint technology is an entirely new class of nonvolatile memory that can help transform immense amounts of data into valuable information in real time. With dramatically improved performance and endurance over traditional nonvolatile storage, it provides an entirely new suite of capabilities to system designers, enabling new ways to deal with the deluge of information in big data applications.


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Industry’s Fastest Graphics Memory


The evolutionary GDDR5X memory handles the enormous demands of graphics processing by offering higher densities and twice the memory bandwidth of its predecessor. This dedicated graphics memory enables an exciting new class of graphics cards which deliver incredible performance, pushing gaming and virtual reality to new levels.


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Hybrid Memory Cube

Revolutionary stacked DRAM architecture

Hybrid Memory Cube (HMC) is a revolutionary innovation in DRAM memory architecture that sets a new standard for memory performance, power consumption and cost. With HMC, you can move data up to 15 times faster than with a DDR3 module and use up to 70% less energy and 90% less space than with existing memory technologies.


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