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Micron Products


Our reduced-latency DRAM (RLDRAM® memory) is a high-performance, high-density memory solution that offers fast SRAM-like random access and outpaces even leading-edge DDR3 for sustained high bandwidth. RLDRAM uses innovative circuit design to minimize the time between the beginning of an access cycle and the instant that the first data is available. These traits make RLDRAM an ideal choice for 10GbE, 40GbE, and 100GbE packet buffering and inspections, and it’s supported on a wide variety of FPGAs and network processor solutions.

By Density

Density Technology Depth Width Voltage Package
1.125Gb RLDRAM 3 32Mb, 64Mb x36, x18 1.35V FBGA
576Mb RLDRAM 3, RLDRAM 2 16Mb, 32Mb, 64Mb x36, x18, x9 1.35V, 1.8V FBGA, uBGA
288Mb RLDRAM 2 8Mb, 16Mb, 32Mb x36, x18, x9 1.8V uBGA, FBGA
View Full RLDRAM Part Catalog

By Application

Big Bandwidth

Big Bandwidth

Leverage high performance and high density for 10GbE, 40GbE, and 100GbE packet buffering and inspections.

Low Latency

Low Latency

Minimize latency without sacrificing fast, SRAM-like random access.


Featured Power Calculator

RLDRAM 3 Power Calculator

Updated: 07/2014