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Micron Products


Our reduced-latency DRAM (RLDRAM® memory) is a high-performance, high-density memory solution that offers fast SRAM-like random access and outpaces even leading-edge DDR3 for sustained high bandwidth. RLDRAM uses innovative circuit design to minimize the time between the beginning of an access cycle and the instant that the first data is available. These traits make RLDRAM an ideal choice for 10GbE, 40GbE, and 100GbE packet buffering and inspections, and it’s supported on a wide variety of FPGAs and network processor solutions.

By Density

View Full RLDRAM Part Catalog
Density Technology Depth Width Voltage Package
1.15Gb RLDRAM 3 64Mb, 32Mb x18, x36 1.35V FBGA
576Mb RLDRAM 3, RLDRAM 2 16Mb, 32Mb, 64Mb x36, x18, x9 1.35V, 1.8V FBGA, uBGA
288Mb RLDRAM 2 8Mb, 32Mb, 16Mb x36, x9, x18 1.8V uBGA

By Application

Big Bandwidth

Big Bandwidth

Leverage high performance and high density for 10GbE, 40GbE, and 100GbE packet buffering and inspections.

Low Latency

Low Latency

Minimize latency without sacrificing fast, SRAM-like random access.


Featured Power Calculator

RLDRAM 3 Power Calculator

Updated: 07/2014

Title & Description Updated Type
Micron BGA Manufacturer's User Guide (pdf) Provides information to enable customers to easily integrate both leading-edge and legacy Micron's ball grid array (BGA) packages into their manufacturing processes. It is intended as a set of high-level guidelines and a reference manual describing typical package-related and manufacturing process-flow practices.
12/2014 Customer Service Note Add Email
DRAM Component Part Numbering System (pdf) Part numbering guide for DDR4/DDR3/DDR2/DDR/SDR SDRAM, Mobile LPDRAM, and RLDRAM components 12/2014 Part Numbering Guide Add Email
Micron Component and Module Packaging (pdf) Explanation of Micron packaging labels and procedures.
11/2014 Customer Service Note Add Email
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