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Micron Products

DRAM

Accelerate your time-to-market with quality DRAM components—rigorously tested for a wide range of applications—from the extreme temperature and performance needs of industrial and automotive applications to the exacting specs of enterprise systems, we have the right solution for your design.

By Technology

Technology Benefits Densities Configurations Supply Voltages
DDR4 SDRAM High performanceImproved power savingsIncreased data ratesFaster burst accesses 4Gb x4, x8, x16 1.2V
DDR3 SDRAM Enables large memory subsystemsIncreased power efficiencyHigh performanceIncreased bandwidth
1Gb–4Gb x4, x8, x16 1.35V, 1.5V
DDR2 SDRAM Enables large memory subsystemsLow-voltage, energy-efficient optionsExtended operating temperatures

256Mb–4Gb x4, x8, x16 1.55V, 1.8V
DDR SDRAM Extended operating temperaturesJEDEC-compliant
256MB–1GB x4, x8, x16 2.5, 2.6V
SDRAM Extended operating temperaturesJEDEC-compliantEasy-to-implement 64MB–512MB x4, x8, x16, x32 3.3V
GDDR5 Ultra-high memory bandwidthHigh performanceSystem stabilityx32/x16peration
2Gb–4Gb x32 1.5V
RLDRAM Memory High-performanceUltra-low bus turnaround time enables higher sustainable bandwidthIdeal choice for packet buffering and inspectionsExtended operating temperatures
288Mb, 576Mb, 1Gb x9, x18, x36 1.8V core; 1.5V or 1.8V I/O
Mobile LPDRAM Available in multiple technologies: LPSDR, LPDDR, LPDDR2, and LPDDR3Low standby current and low self refresh for extended battery lifeTemperature-compensated self refresh (TCSR) and partial-array self refresh (PASR) modes
128Mb–16Gb x16, x32, x64 1.2V–3.3V
PSRAM/CellularRAM Low power consumption, high speed read and write functionCompatible with the standard wireless Flash interfaceTemperature-compensated refresh (TCR) and partial-array refresh PAR)
16–128Mb x16 1.7–1.95V core,
1.7–3.3V I/O,
1.7–3.6V I/O

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