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3D NAND FAQs

NAND Flash
3D NAND(4)
Why is 3D NAND necessary?
Planar NAND flash memory is nearing its practical scaling limits, which poses challenges for the memory industry.  Industry innovation requires state-of-the-art NAND technology that scales with higher densities and lower cost per bit. 3D NAND allows flash storage solutions to continue aligning with Moore’s Law, bringing significant improvements in density while lowering the cost of NAND flash.
What sets apart this 3D NAND from other offerings in the industry?

The 3D NAND technology developed by Intel and Micron offers significant improvements in density and cost, and it’s the first 3D NAND to use floating gate cells.  This 3D NAND enables flash devices with three times higher capacity than other planar NAND die in production, and the first generation is architected to achieve better cost efficiencies than planar NAND. There are also various features that will improve latency, increase endurance and make system integration easier.

Micron’s 3D is a “smarter” NAND technology. What do you mean?
We have integrated various features to deliver improved performance and new functionality, including new programming algorithms and power management modes that help make system integration easier. See FortisFlash to learn more about these features.
What are the details of your cell and process technology for 3D NAND?
The new 3D NAND technology uses floating gate cells and stacks flash cells vertically in 32 layers to achieve 256Gb multilevel cell (MLC) and 384Gb triple-level cell (TLC) die that fit within a standard package.