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Are CK/CK# and DK/DK# true differential inputs?
Yes, the CK/CK# and DK/DK# input buffers are true differential inputs. Both sets of clocks need to meet the specifications that are defined in the Clock Input Operating Conditions tables in the RLDRAM data sheets.
Can I connect the “Do Not Use” (DNU) pins to ground (GND)?
Yes. However, when on-die termination (ODT) is enabled, the DNU pins will be connected to VTT. Connecting the DNU pins to GND under these circumstances will cause a substantially larger load on your VTT supply.
How is RLDRAM II memory similar to SRAM?
 Simplified command set of only four commands and a Fast cycle time, as low as 7ns tRC
I’ve heard about the new multibank write feature on RLDRAM 3. What exactly is this feature?
Multibank write is a feature that allows for SRAM-like random read access time. Using this feature can reduce RLDRAM 3’s already low tRC (<10ns) by up to 75% during reads. Through the RLDRAM 3 mode register, you can choose to write to one, two, or four banks simultaneously. By storing identical data in multiple banks, the memory controller has the flexibility to determine which bank to read the data from in order to minimize tRC delay.
What new features does RLDRAM 3 add?
 Multibank write that enables SRAM-like random read capabilities. MULTIBANK REFRESH makes managing refresh overhead more flexible than ever, allowing refresh of one to four banks simultaneously. RLDRAM3 also supports a mirror function to ease layout of clamshell designs.
Will I be able to leverage any existing DRAM technology to ease the adoption of RLDRAM 3 in my system?
Yes. Even though RLDRAM 3 is a new architecture, it leverages many features from both DDR3 and RLDRAM 2 to make adoption and integration as easy as possible. The command protocol, addressing, and strobing scheme are the same as RLDRAM 2, while the I/O, AC timing, and read training register very closely resemble those found in DDR3.