M29W512GH70N3E

Orderable parts

M29W512GH70N3E

Specs

  • Chipset Validation
    N/A
  • Density
    512Mb
  • FBGA Code
    N/A
  • Op. Temp.
    -40C to +125C
  • Part Family
    M29W
  • Part Status
    End of Life
  • PLP
    No
  • PLP Start Date
    N/A
  • Width
    x8/x16

Data Sheets

512Mb: 3V Embedded Parallel NOR Flash

Parallel NOR Flash Embedded Memory – Automotive Qualified
  • File Type: PDF
  • Updated: 6/5/2018

RoHS

China RoHS Certificate

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.
  • File Type: (PDF)
  • Updated: 12/2018

RoHS Certificate of Compliance

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2011/65/EU and 2015/863/EU, a.k.a. Restriction of Hazardous Substances (RoHS) Directive (Recast) without exemptions.
  • File Type: (PDF)
  • Updated: 12/2018

SIM Models

IBIS_M29W512G

65nm M29W256G silicon model + m29w512g_tsop56.ebd file. Voltage corners: 1.65-1.95V, 2.7-3.6V. N= TSOP56. 3= -40C to +125C.
  • File Type: ZIP
  • Updated: 3/12/2014

Technical Notes

TN-00-08: Thermal Applications

Describes some considerations in thermal applications for Micron memory devices
  • File Type: PDF
  • Updated: 2/15/2018

Bypass Capacitor Selection for High-Speed Designs

Describes bypass capacitor selection for high-speed designs.
  • File Type: PDF
  • Updated: 3/23/2011

Customer Service Notes

Micron Component and Module Packaging

Explanation of Micron packaging labels and procedures.
  • File Type: PDF
  • Updated: 10/12/2018

ESD Precautions for Die/Wafer Handling and Assembly

Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs.
  • File Type: PDF
  • Updated: 8/5/2010
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