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Data Sheet Uploaded 01/2018

Features

Features

Supply voltage

VCC = 2.7–3.6V (program, erase, read)

VPP = 12V for fast program (optional)

Access time: 70, 80, and 90ns

Program time

10µs per byte/word TYP

Memory organization

67 memory blocks

1 boot block (top or bottom)

2 parameter blocks and 64 main blocks

Program/erase controller

Embedded byte/word program algorithms

Erase suspend and resume capability

Read or program another block during an ERASE SUSPEND operation

Unlock bypass program command

Fast buffered/batch programming

VPP/WP# pin for fast program and write protect

Temporary block unprotection mode (RST#)

Common Flash interface (CFI)

64-bit security code

Low power consumption: Standby and automatic mode

100,000 PROGRAM/ERASE cycles per block

Electronic signature

Manufacturer code: 0020h

Top device code M29W320DT: 22CAh

Bottom device code M29W320DB: 22CBh

RoHS-compliant

TSOP48 (N) 12mm x 20mm

TFBGA48 (ZE)

Automotive-grade parts available

Part Numbering Information

Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages or speed, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com . Feature and specification comparison by device type is available at www.micron.com/products . Contact the factory for devices not found.

Table 1. Part Number Information

Part Number
Category
Category Details Notes
Device type M29 = Parallel Flash memory
Operating voltage W = VCC = 2.7 to 3.6V
Device function 320D = 32Mb (x8/x16) page, non-uniform parameter blocks, boot block
Array matrix T = Top boot
B = Bottom boot
Speed 7A = 70ns 1
70 = 70ns 2
80 = 80ns 3
90 = 90ns 4
Package N = 48-pin TSOP, 12mm x 20mm
ZE = 48-pin TFBGA, 6mm x 8mm, 0.8mm pitch
ZA = 48-pin TFBGA, 6mm x 8mm, 0.8mm pitch
Temperature range 6 = –40°C to +85°C
3 = –40°C to +125°C
Shipping options Blank = Standard
T = Tape and reel
E = RoHS-compliant package, standard
F = RoHS-compliant package, tape and reel

Notes

  1. Device speed in conjunction with temperature range = 6 denotes automotive grade –40°C to +85°C parts.

  2. Device speed in conjunction with temperature range = 6 denotes industrial grade –40°C to +85°C parts; temperature range = 3 denotes Automotive Grade –40°C to +125°C parts.

  3. Device speed in conjunction with temperature range = 3 denotes automotive grade –40°C to +125°C parts with extended VCC range (min 2.5V).

  4. Device speed in conjunction with temperature range = 6 denotes industrial grade –40°C to +85°C parts.

Products and specifications discussed herein are subject to change by Micron without notice. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.

General Description

General Description

The M29W320DT/B (4Mb x 8 or 2Mb x 16) is a nonvolatile memory device that can be read, erased, and reprogrammed. These operations can be performed using a single-low voltage (2.7V to 3.6V) supply. Upon power-up, the memory defaults to read mode, in which it can be read in the same way as a ROM or EEPROM.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental PROGRAM or ERASE commands from modifying the memory. PROGRAM and ERASE commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all the special operations required to update the memory contents.

The end of a PROGRAM or ERASE operation can be detected, and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

The blocks in the memory are asymmetrically arranged. The first or last 64KB have been divided into four additional blocks. The 16KB boot block can be used for small initialization code to start the microprocessor, the two 8KB parameter blocks can be used for parameter storage, and the remaining 32KB is a small main block where the application may be stored.

Chip enable (CE#), output enable, (OE#), and write enable (WE#) signals control the bus operation of the memory, allowing simple connection to most microprocessors, often without additional logic.

The memory is offered in TSOP48 (12 x 20mm) and TFBGA48 (0.8mm pitch 6 x 8mm). The memory is supplied with all the bits erased (set to 1). To meet environmental requirements, Micron offers the M29W320D in RoHS packages, which are lead-free. The category of second-level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.

Figure 1. Logic Diagram


Table 1. Signal Names
A[20:0] Address inputs
DQ[7:0] Data I/O
DQ[14:8] Data I/O
DQ15A–1 Data I/O
CE# Chip enable
OE# Output enable
WE# Write enable
RST# Reset/block temporary unprotect
RY/BY# Ready/busy output
BYTE# Byte/word organization select
VCC Core power supply
VPP/WP# VPP/write protect
VSS Ground
NC Not connected internally

Products and specifications discussed herein are subject to change by Micron without notice. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.

Signal Assignments

Signal Assignments

Figure 1. TSOP 48-Ball Connections



Note

  1. RFU = reserved for future use.

Figure 2. TFBGA 48-Ball Connections



Note

  1. RFU = reserved for future use.

Products and specifications discussed herein are subject to change by Micron without notice. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.