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Data Sheet Uploaded 06/2013

Features

Features

Supply voltage

VCC = 2.7–3.6V (program, erase, read)

Access times

70, 90ns

Program time

10µs per byte/word (TYP)

Memory organization

3 parameter and 31 main blocks

1 boot block (top or bottom location)

Program/erase controller

Embedded byte/word program algorithms

Erase suspend and resume capability

Read or program another block during an ERASE SUSPEND operation

UNLOCK BYPASS PROGRAM COMMAND

Fast buffered/batch programming

Temporary block unprotect mode

Common Flash interface

64-bit security code

Low power consumption: Standby and automatic mode

100,000 PROGRAM/ERASE cycles per block

Electronic signature

Manufacturer code: 0020h

Top device code M29W160ET: 22C4h

Bottom device code M29W160EB: 2249h

Packages

48-pin TSOP (N) 12mm x 20mm

48-ball TFBGA (ZA) 6mm x 8mm

64-ball FBGA (ZS) 11mm x 13mm

Automotive grade parts available

Part Numbering Information

Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages or speed, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com . Feature and specification comparison by device type is available at www.micron.com/products . Contact the factory for devices not found.

Table 1. Part Number Information

Part Number
Category
Category Details Notes
Device Type M29 = Parallel Flash memory
Operating Voltage W = 2.7 to 3.6V
Device function 160E = 16Mb memory array
Configuration T = Top boot
B = Bottom boot
Speed 7A = 70ns 1
70 = 70 ns 2
80 = 80ns 3
90 = 90ns 4
Package N = 48-pin TSOP, 12mm x 20mm
ZA = 48-ball TFBGA, 6mm x 8mm, 0.80mm pitch
ZS = 64-ball Fortified BGA, 11mm x 13mm, 1mm pitch
Temperature Range 6 = –40° to 85°C
3 = –40°C to 125°C
Voltage Extension Blank = Standard option
S = VCC,min extension to 2.5V of VCC and available only with 80ns speed class option
Shipping Options Blank = Standard packing
T = Tape and reel packing
E = RoHS-compliant package, standard packing
F = RoHS-compliant package, tape and reel packing

Notes

  1. Device speed in conjunction with temperature range = 6 to denote automotive grade (–40° to 85°C) parts.

  2. Device speed in conjunction with temperature range = 6 to denote industrial grade (–40° to 85°C) parts, or in conjunction with temperature range = 3 to denote automotive grade (–40° to 125°C) parts.

  3. Access time, automotive device, in conjunction with temperature range = 3 and voltage extension = S.

  4. Device speed in conjunction with temperature range = 6 to denote industrial grade (–40° to 85°C) parts.

Products and specifications discussed herein are subject to change by Micron without notice. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.

General Description

General Description

The M29W160ET/B (2Mb x8 or 1Mb x16) is a nonvolatile device that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7–3.6V) supply. On power-up the memory defaults to read mode where it can be read in the same way as a ROM or EPROM.

The device is divided into blocks that can be erased independently to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental PROGRAM or ERASE commands from modifying the memory. PROGRAM and ERASE commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

The end of a PROGRAM or ERASE operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

The blocks in the memory are asymmetrically arranged. The first or last 64KB have been divided into four additional blocks. The 16KB boot block can be used for a small initialization code to start the microprocessor, the two 8 KB parameter blocks can be used for parameter storage, and the remaining 32KB is a small main block where the application may be stored.

CE#, OE#, and WE# signals control the bus operation. They enable simple connection to most microprocessors, often without additional logic.

The device supplied with all the bits erased (set to 1).

Figure 1. Logic Diagram


Table 1. Signal Names
Name Description Type
A[19:0] Address inputs Input
CE# Chip enable Input
OE# Output enable Input
WE# Write enable Input
BYTE# Byte/word organization select Input
RST# Reset/block temporary unprotect Input
DQ[7:0] Data I/O I/O
DQ[14:8] Data I/O I/O
DQ15/A-1 Data I/O or address input I/O
RY/BY# Ready/busy output Output
VCC Core power supply Supply
VSS Ground Supply
NC Not connected internally

Products and specifications discussed herein are subject to change by Micron without notice. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.

Signal Assignments

Signal Assignments

Figure 1. 48-Pin TSOP 160ET/B



Note

  1. RFU = reserved for future use.

Figure 2. 48-Ball TFBGA 160ET/B



Note

  1. RFU = reserved for future use.

Figure 3. 64-Ball FBGA 160ET/B



Note

  1. RFU = reserved for future use.

Products and specifications discussed herein are subject to change by Micron without notice. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.