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Data Sheet Uploaded 03/2014

Features

Features

SPI bus-compatible serial interface

75 MHz clock frequency (MAX)

2.7–3.6V single supply voltage

1Mb of page-erasable Flash memory

Page size: 256 bytes

Page write: 11ms (TYP)

Page program: 0.8ms (TYP)

Page erase: 10ms (TYP)

Sector erase: 512Kb

Hardware write protection of the bottom memory area 64KB

Electronic signature

JEDEC-standard, 2-byte signature (4011h)

Deep power-down mode: 1µA (TYP)

WRITE cycles per sector: >100,000

Years of data retention: >20

Packages (RoHS-compliant)

VFQFPN8 (MP) 6mm x 5mm

SO8N (MN) 150 mil

Products and specifications discussed herein are subject to change by Micron without notice. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.

Functional Description

Functional Description

The M45PE10 is a 1Mb (128Kb x 8) serial Flash memory device accessed by a high-speed, SPI-compatible bus.

The memory can be written or programmed 1 to 256 bytes at a time using the PAGE WRITE or PAGE PROGRAM command. The PAGE WRITE command consists of an integrated PAGE ERASE cycle followed by a PAGE PROGRAM cycle.

The memory is organized as 2 sectors, each containing 256 pages. Each page is 256 bytes wide. The entire memory can be viewed as consisting of 512 pages, or 131,072 bytes.

The memory can be erased one page at a time using the PAGE ERASE command or one sector at a time using the SECTOR ERASE command.

To meet environmental requirements, Micron offers the M45PE10 in RoHS-compliant packages, which are also lead-free.

Figure 1. Logic Diagram
Table 1. Signal Names
Signal Name Function Direction
C Serial clock Input
DQ0 Serial data input Input
DQ1 Serial data output Output
S# Chip select Input
W# Write protect Input
RESET# Reset Input
VCC Supply voltage
VSS Ground
Figure 2. Pin Connections: VDFPN and SO


There is an exposed central pad on the underside of the VFQFPN package that is pulled internally to VSS and must not be connected to any other voltage or signal line on the PCB. The Package Information section provides details about package dimensions and how to identify pin 1.

Products and specifications discussed herein are subject to change by Micron without notice. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.

Signal Descriptions

Signal Descriptions

Table 1. Signal Descriptions
Signal Type Description
DQ0 Input Serial data: Transfers data serially into the device. DQ0 receives commands, addresses, and data to be programmed. Values are latched on the rising edge of serial clock (C).
C Input Clock: Provides timing for the serial interface. Commands, addresses, or data present at serial data input (DQ0) is latched on the rising edge of serial clock (C). Data on DQ1 changes after the falling edge of C.
S# Input Chip select: When S# is HIGH, the device is deselected and DQ1 is High-Z. Unless an internal READ, PROGRAM, ERASE, or WRITE cycle is in progress, the device will be in the standby power mode (not deep power-down mode). Driving S# LOW enables the device, placing it in the active power mode. After power-up, a falling edge on S# is required prior to the start of any command.
RESET# Input Reset: Provides a hardware reset for the memory. When RESET# is driven HIGH, the device is in the normal operating mode. When RESET# is driven LOW, the device enters the reset mode. In reset mode, the output is High-Z. Driving RESET# LOW while an internal operation is in progress affects the WRITE, PROGRAM, or ERASE cycle, and data may be lost.
W# Input Write protect: Places the device in hardware protected mode when connected to VSS, causing the first 256 pages of memory to become read-only, protected from WRITE, PROGRAM, and ERASE operations. When W# is connected to VCC, the first 256 pages of memory behave like the other pages.
DQ1 Output Serial data: Transfers data serially out of the device. Data is shifted out on the falling edge of the serial clock (C).
VCC Supply Supply voltage: 2.7–3.6V
VSS Supply Ground: Reference for VCC.

Products and specifications discussed herein are subject to change by Micron without notice. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.