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3D XPointTM Technology

Breakthrough Nonvolatile Memory Technology

The explosion of connected devices and digital services is generating massive amounts of new data. For this data to be useful, it must be stored and analyzed very quickly. 3D XPoint™ technology is an entirely new class of nonvolatile memory that can help turn immense amounts of data into valuable information in real time. With up to 1,000 times lower latency and exponentially greater endurance than NAND, 3D XPoint technology can deliver game-changing performance for big data applications and transactional workloads. Its ability to enable high-speed, high-capacity data storage close to the processor creates new possibilities for system architects and promises to enable entirely new applications.

Introducing Micron QuantX™ Technology, Based on 3D XPoint™ Memory

Micron QuantXAt Flash Memory Summit 2016, we unveiled Micron QuantX™ technology — a set of solutions that incorporates our groundbreaking 3D XPoint memory to provide differentiated, value-added platforms to end customers with the same quality and reliability that Micron is known for. QuantX technology delivers a quantum leap forward in how the world interacts with and makes decisions on the volume, velocity and variety of data created every day.

Interested in joining the Micron QuantX Community to learn how you can take advantage of 3D XPoint memory?

Watch Micron and Intel representatives
talk 3D XPoint Technology.

3D XPoint Technology Architecture

The 3D XPoint technology innovative, transistor-less cross point architecture creates a three-dimensional checkerboard where memory cells sit at the intersection of word lines and bit lines, allowing the cells to be addressed individually. As a result, data can be written and read in small sizes, leading to fast and efficient read/write processes.


3D XPoint Memory Innovations

Cross Point Array Structure
Perpendicular conductors connect 128 billion densely packed memory cells. Each memory cell stores a single bit of data. This compact structure results in high performance and high density.


The initial technology stores 128Gb per die across two stacked memory layers. Future generations of this technology can increase the number of memory layers and/or use traditional lithographic pitch scaling to increase die capacity.

Memory cells are written or read by varying the amount of voltage sent to each selector. This eliminates the need for transistors, increasing capacity and reducing cost.

Fast Switching Cell
With a small cell size, fast switching selector, low-latency cross point array, and fast write algorithm, the cell is able to switch states faster than any existing nonvolatile memory technologies today.