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MT48H16M32LFB5-6 IT

Specs

Orderable Parts for: MT48H16M32LFB5-6 IT
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT48H16M32LFB5-6 IT:C Production N/A D9MMD N/A N/A No N/A
Detailed Specifications
Technology LPSDR Density 512Mb Part Status Production RoHS Yes
Depth 16Mb Width x32 Voltage 1.8V Package VFBGA
Pin Count 90-ball Clock Rate 167 MHz Data Rate Cycle Time 6ns
Op. Temp. -40C to +85C Brand Micron

Sim Models & Software

Sim Models
IBIS

2.0 (Die Rev. C)

  • File Type: ZIP
  • Updated: 10/29/2010
HSpice

2.0 (Die Rev. C)

  • File Type: ZIP
  • Updated: 10/29/2010
Verilog
  • File Type: ZIP
  • Updated: 05/20/2009
Verilog
Verilog (ZIP)

5.6

  • File Type: ZIP
  • Updated: 09/02/2008

RoHS Certificates

RoHS Certificates
RoHS Certificate of Compliance (PDF)

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2002/95/EC, a.k.a. Restriction of Hazardous Substances (RoHS) Directive.

  • File Type: (PDF)
  • Updated: 12/2016
RoHS Certificates
China RoHS Certificate (PDF)

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.

  • File Type: (PDF)
  • Updated: 12/2016

Documentation & Support

See All LPDRAM Documentation
Technical Notes
Search (9) LPDRAM Technical Notes
Technical Notes


(E0599E20) This technical note describes Auto Temperature Compensated Self Refresh (ATCSR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0597E10) This technical note describes Partial Array Self Refresh (PASR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0598E21) This technical note describes Deep Power Down (DPD), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(TN-00-01) This technical note describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture.

  • File Type: PDF
  • Updated: 02/14/2013
Technical Notes


(TN-46-23) This technical note reviews the timing differences between the faster and slower LPDDR SDRAM speeds and explains how faster parts function compatibly with slower parts.

  • File Type: PDF
  • Updated: 02/04/2013
Search (9) LPDRAM Technical Notes

Parts with the same Data Sheet (4)

MT48H16M32LFB5-6 IT ( Current ) MT48H16M32LFB5-75 IT MT48H32M16LFB4-6 IT MT48H32M16LFB4-75 IT MT48H32M16LFB4-6 AT
Part Status Production End of Life Production Contact Factory Production
Technology LPSDR LPSDR LPSDR LPSDR LPSDR
Density 512Mb 512Mb 512Mb 512Mb 512Mb
RoHS Yes Yes Yes Yes Yes
Depth 16Mb 16Mb 32Mb 32Mb 32Mb
Width x32 x32 x16 x16 x16
Voltage 1.8V 1.8V 1.8V 1.8V 1.8V
Package VFBGA VFBGA VFBGA VFBGA VFBGA
Pin Count 90-ball 90-ball 54-ball 54-ball 54-ball
Clock Rate 167 MHz 133 MHz 167 MHz 133 MHz 167 MHz
Data Rate
Cycle Time 6ns 7.5ns 6ns 7.5ns 6ns
Op. Temp. -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +105C
Brand Micron Micron Micron Micron Micron

Where to Buy

Orderable Parts
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT48H16M32LFB5-6 IT:C Production N/A D9MMD N/A N/A No N/A
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