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MT53B256M32D1NP-062 WT

Data Sheets (1)

Data Sheet
MT53B256M32D1, MT53B512M32D2, MT53B1024M32D4
  • File Type: PDF
  • Updated: 06/2017

Specs

Orderable Parts for: MT53B256M32D1NP-062 WT
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT53B256M32D1NP-062 WT:C Production N/A D9TFT N/A N/A No N/A
Detailed Specifications
Technology LPDDR4 Density 8Gb Part Status Production RoHS Yes
Depth 256Mb Width x32 Voltage 1.1V Package WFBGA
Pin Count 200-ball Clock Rate 1600 MHz Data Rate DDR4-3200 Cycle Time
Op. Temp. -30C to +85C Brand Micron

Sim Models & Software

Sim Models
HSpice
Z01M HSPICE (ZIP)

Z01M Mobile LPDDR4 SDRAM, Die Rev. C

  • File Type: ZIP
  • Updated: 03/15/2017
IBIS
Z01M IBIS (ZIP)

Z01M Mobile LPDDR4 SDRAM, Die Rev. C, SDP, DDP, QDP, 200b, 272b, 366b, 432b

  • File Type: ZIP
  • Updated: 03/15/2017

RoHS Certificates

RoHS Certificates
RoHS Certificate of Compliance (PDF)

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2002/95/EC, a.k.a. Restriction of Hazardous Substances (RoHS) Directive.

  • File Type: (PDF)
  • Updated: 10/2017
RoHS Certificates
China RoHS Certificate (PDF)

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.

  • File Type: (PDF)
  • Updated: 10/2017

Documentation & Support

See All LPDRAM Documentation
Technical Notes
Search (9) LPDRAM Technical Notes
Technical Notes


(E0598E21) This technical note describes Deep Power Down (DPD), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0597E10) This technical note describes Partial Array Self Refresh (PASR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0599E20) This technical note describes Auto Temperature Compensated Self Refresh (ATCSR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(TN-00-01) This technical note describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture.

  • File Type: PDF
  • Updated: 02/14/2013
Technical Notes


(TN-46-23) This technical note reviews the timing differences between the faster and slower LPDDR SDRAM speeds and explains how faster parts function compatibly with slower parts.

  • File Type: PDF
  • Updated: 02/04/2013
Search (9) LPDRAM Technical Notes

Parts with the same Data Sheet (5)

MT53B256M32D1NP-062 WT ( Current ) MT53B256M32D1DS-062 XT MT53B256M32D1NP-053 WT MT53B512M32D2NP-062 WT MT53B512M32D2DS-062 XT MT53B1024M32D4NQ-062 WT
Part Status Production Sampling Production Production Sampling Sampling
Technology LPDDR4 LPDDR4 LPDDR4 LPDDR4 LPDDR4 LPDDR4
Density 8Gb 8Gb 8Gb 16Gb 16Gb 32Gb
RoHS Yes Yes Yes Yes Yes Yes
Depth 256Mb 256Mb 256Mb 512Mb 512Mb 1Gb
Width x32 x32 x32 x32 x32 x32
Voltage 1.1V 1.1V 1.1V 1.1V 1.1V 1.1V
Package WFBGA WFBGA WFBGA WFBGA WFBGA WFBGA
Pin Count 200-ball 200-ball 200-ball 200-ball 200-ball 200-ball
Clock Rate 1600 MHz 1600 MHz 1866 MHz 1600 MHz 1600 MHz 1600 MHz
Data Rate DDR4-3200 DDR4-3200 DDR4-3733 DDR4-3200 DDR4-3200 DDR4-3200
Cycle Time
Op. Temp. -30C to +85C -30C to +105C -30C to +85C -30C to +85C -30C to +105C -30C to +85C
Brand Micron Micron Micron Micron Micron Micron

Where to Buy

Orderable Parts
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT53B256M32D1NP-062 WT:C Production N/A D9TFT N/A N/A No N/A
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