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MT52L256M64D2LZ-107 WT

Data Sheets (1)

Data Sheet
LPDDR3, 216-ball, V01M, dual-channel, embedded, MT52L256M64D2
  • File Type: PDF
  • Updated: 08/2016

Specs

Orderable Parts for: MT52L256M64D2LZ-107 WT
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT52L256M64D2LZ-107 WT:B Sampling N/A D9TBZ N/A N/A No N/A
Detailed Specifications
Technology LPDDR3 Density 16Gb Part Status Sampling RoHS Yes
Depth 256Mb Width x64 Voltage 1.2V Package WFBGA
Pin Count 216-ball Clock Rate 933 MHz Data Rate DDR3-1866 Cycle Time 1.071ns
Op. Temp. -30C to +85C Brand Micron

Sim Models & Software

Sim Models
Verilog

Verilog simulation model for 8Gb Mobile LPDDR3

  • File Type: ZIP
  • Updated: 09/09/2016
IBIS

Rev 1.3_XT/WT, Rev 1.0_IT, Die, 168-Ball, 178-Ball, 256-Ball, 253-Ball, 216-Ball, SDP, DDP, TDP, QDP, 8DP, LPDDR3 SDRAM

  • File Type: ZIP
  • Updated: 07/14/2016

RoHS Certificates

RoHS Certificates
RoHS Certificate of Compliance (PDF)

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2002/95/EC, a.k.a. Restriction of Hazardous Substances (RoHS) Directive.

  • File Type: (PDF)
  • Updated: 12/2016
RoHS Certificates
China RoHS Certificate (PDF)

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.

  • File Type: (PDF)
  • Updated: 12/2016

Documentation & Support

See All LPDRAM Documentation
Technical Notes
Search (9) LPDRAM Technical Notes
Technical Notes


(E0599E20) This technical note describes Auto Temperature Compensated Self Refresh (ATCSR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0597E10) This technical note describes Partial Array Self Refresh (PASR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0598E21) This technical note describes Deep Power Down (DPD), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(TN-00-01) This technical note describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture.

  • File Type: PDF
  • Updated: 02/14/2013
Technical Notes


(TN-46-23) This technical note reviews the timing differences between the faster and slower LPDDR SDRAM speeds and explains how faster parts function compatibly with slower parts.

  • File Type: PDF
  • Updated: 02/04/2013
Search (9) LPDRAM Technical Notes

Where to Buy

Orderable Parts
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT52L256M64D2LZ-107 WT:B Sampling N/A D9TBZ N/A N/A No N/A
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