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MT52L256M64D2GN-107 WT

Data Sheets (1)

Data Sheet
DDP, QDP, 14x14, MT52L256M64D2GN-107 WT:B, MT52L256M64D4GN-107 WT :B
  • File Type: PDF
  • Updated: 09/2015

Specs

Orderable Parts for: MT52L256M64D2GN-107 WT
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT52L256M64D2GN-107 WT:B Contact Factory N/A D9TBD N/A N/A No N/A
Detailed Specifications
Technology LPDDR3 Density 16Gb Part Status Contact Factory RoHS Yes
Depth 256Mb Width x64 Voltage 1.2V Package WFBGA
Pin Count 256-ball Clock Rate 933 MHz Data Rate DDR3-1866 Cycle Time 1.071ns
Op. Temp. -30C to +85C Brand Micron

Sim Models & Software

Sim Models
IBIS

Rev 1.4_XT/WT, Rev 1.1_IT, Die, 168-Ball, 178-Ball, 256-Ball, 253-Ball, 216-Ball, SDP, DDP, TDP, QDP, 8DP, LPDDR3 SDRAM

  • File Type: ZIP
  • Updated: 03/06/2017
Verilog

Verilog simulation model for 8Gb Mobile LPDDR3

  • File Type: ZIP
  • Updated: 09/09/2016

RoHS Certificates

RoHS Certificates
RoHS Certificate of Compliance (PDF)

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2002/95/EC, a.k.a. Restriction of Hazardous Substances (RoHS) Directive.

  • File Type: (PDF)
  • Updated: 08/2017
RoHS Certificates
China RoHS Certificate (PDF)

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.

  • File Type: (PDF)
  • Updated: 08/2017
RoHS Certificates
BSMI Taiwan RoHS certificate (PDF)

Part-specific certification as required by Taiwan's Management Methods for Controlling Pollution by Electronic Information Products.

  • File Type: (PDF)
  • Updated: 08/2017

Documentation & Support

See All LPDRAM Documentation
Technical Notes
Search (9) LPDRAM Technical Notes
Technical Notes


(E0599E20) This technical note describes Auto Temperature Compensated Self Refresh (ATCSR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0597E10) This technical note describes Partial Array Self Refresh (PASR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0598E21) This technical note describes Deep Power Down (DPD), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(TN-00-01) This technical note describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture.

  • File Type: PDF
  • Updated: 02/14/2013
Technical Notes


(TN-46-23) This technical note reviews the timing differences between the faster and slower LPDDR SDRAM speeds and explains how faster parts function compatibly with slower parts.

  • File Type: PDF
  • Updated: 02/04/2013
Search (9) LPDRAM Technical Notes

Parts with the same Data Sheet (1)

MT52L256M64D2GN-107 WT ( Current ) MT52L512M64D4GN-107 WT
Part Status Contact Factory Production
Technology LPDDR3 LPDDR3
Density 16Gb 32Gb
RoHS Yes Yes
Depth 256Mb 512Mb
Width x64 x64
Voltage 1.2V 1.2V
Package WFBGA WFBGA
Pin Count 256-ball 256-ball
Clock Rate 933 MHz 933 MHz
Data Rate DDR3-1866 DDR3-1866
Cycle Time 1.071ns 1.071ns
Op. Temp. -30C to +85C -30C to +85C
Brand Micron Micron

Where to Buy

Orderable Parts
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT52L256M64D2GN-107 WT:B Contact Factory N/A D9TBD N/A N/A No N/A
Contact Your Sales Rep
Contact A Rep
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Check with Distributors
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