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MT52L256M32D1PF-107 WT

Data Sheets (1)

Data Sheet
178-Ball, SDP, DDP, QDP, Single-Channel, LPDDR3 SDRAM
  • File Type: PDF
  • Updated: 04/2016

Specs

Orderable Parts for: MT52L256M32D1PF-107 WT
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT52L256M32D1PF-107 WT:B Production N/A D9SRZ N/A N/A No N/A
Detailed Specifications
Technology LPDDR3 Density 8Gb Part Status Production RoHS Yes
Depth 256Mb Width x32 Voltage 1.2V Package WFBGA
Pin Count 178-ball Clock Rate 933 MHz Data Rate DDR3-1866 Cycle Time 1.071ns
Op. Temp. -30C to +85C Brand Micron

Sim Models & Software

Sim Models
Verilog

Verilog simulation model for 8Gb Mobile LPDDR3

  • File Type: ZIP
  • Updated: 09/09/2016
IBIS

Rev 1.3_XT/WT, Rev 1.0_IT, Die, 168-Ball, 178-Ball, 256-Ball, 253-Ball, 216-Ball, SDP, DDP, TDP, QDP, 8DP, LPDDR3 SDRAM

  • File Type: ZIP
  • Updated: 07/14/2016

RoHS Certificates

RoHS Certificates
RoHS Certificate of Compliance (PDF)

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2002/95/EC, a.k.a. Restriction of Hazardous Substances (RoHS) Directive.

  • File Type: (PDF)
  • Updated: 12/2016
RoHS Certificates
China RoHS Certificate (PDF)

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.

  • File Type: (PDF)
  • Updated: 12/2016

Documentation & Support

See All LPDRAM Documentation
Technical Notes
Search (9) LPDRAM Technical Notes
Technical Notes


(E0599E20) This technical note describes Auto Temperature Compensated Self Refresh (ATCSR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0597E10) This technical note describes Partial Array Self Refresh (PASR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0598E21) This technical note describes Deep Power Down (DPD), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(TN-00-01) This technical note describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture.

  • File Type: PDF
  • Updated: 02/14/2013
Technical Notes


(TN-46-23) This technical note reviews the timing differences between the faster and slower LPDDR SDRAM speeds and explains how faster parts function compatibly with slower parts.

  • File Type: PDF
  • Updated: 02/04/2013
Search (9) LPDRAM Technical Notes

Parts with the same Data Sheet (2)

MT52L256M32D1PF-107 WT ( Current ) MT52L512M32D2PF-107 WT MT52L1G32D4PG-107 WT
Part Status Production Production Production
Technology LPDDR3 LPDDR3 LPDDR3
Density 8Gb 16Gb 32Gb
RoHS Yes Yes Yes
Depth 256Mb 512Mb 1Gb
Width x32 x32 x32
Voltage 1.2V 1.2V 1.2V
Package WFBGA WFBGA VFBGA
Pin Count 178-ball 178-ball 178-ball
Clock Rate 933 MHz 933 MHz 933 MHz
Data Rate DDR3-1866 DDR3-1866 DDR3-1866
Cycle Time 1.071ns 1.071ns 1.071ns
Op. Temp. -30C to +85C -30C to +85C -30C to +85C
Brand Micron Micron Micron

Where to Buy

Orderable Parts
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT52L256M32D1PF-107 WT:B Production N/A D9SRZ N/A N/A No N/A
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