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Rev 1.2, LPDDR2 SDRAM, AT, IT, UT, WT, XT; EDB4416BBBH-1DIT-F, EDB8164B4PT-1DAT-F, EDB8164B4PT-1DIT-F, EDB8164B4PT-1D-F, EDBA164B2PR-1D-F, EDB8132B4PB-8D-F, EDB8132B4PM-1D-F
Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2002/95/EC, a.k.a. Restriction of Hazardous Substances (RoHS) Directive.
Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.
This technical note describes Deep Power Down (DPD), one of the low-power functions that have been adapted to Mobile DRAM.
This technical note describes Partial Array Self Refresh (PASR), one of the low-power functions that have been adapted to Mobile DRAM.
The first section of this customer service note describes the product marks and labels we place on our devices. The second section describes the labels used on and in our packaging.
Provides information to enable customers to easily integrate both leading-edge and legacy Micron's ball grid array (BGA) packages into their manufacturing processes. It is intended as a set of high-level guidelines and a reference manual describing typical package-related and...