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EDB4432BBBJ-1DAAT-F

Data Sheets (1)

Data Sheet
EDB4432BBBJ (2E0E, 134-Ball, AIT/AAT/AUT)
  • File Type: PDF
  • Updated: 06/2016

Specs

Orderable Parts for: EDB4432BBBJ-1DAAT-F
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
EDB4432BBBJ-1DAAT-F-D Sampling Dry Pack N/A N/A N/A No N/A
EDB4432BBBJ-1DAAT-F-R Sampling Tape & Reel N/A N/A N/A No N/A
Detailed Specifications
Technology LPDDR2 Density 4Gb Part Status Sampling RoHS Yes
Depth 128Mb Width x32 Voltage 1.2V Package WFBGA
Pin Count 134-ball Clock Rate 533 MHz Data Rate LPDDR2-1066 Cycle Time 1.875ns
Op. Temp. -30C to +105C Brand Micron

Sim Models & Software

Sim Models
IBIS

Rev 1.2, LPDDR2 SDRAM, AT, IT, UT, WT, XT; EDB4416BBBH-1DIT-F, EDB8164B4PT-1DAT-F, EDB8164B4PT-1DIT-F, EDB8164B4PT-1D-F, EDBA164B2PR-1D-F

RoHS Certificates

RoHS Certificates
RoHS Certificate of Compliance (PDF)

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2002/95/EC, a.k.a. Restriction of Hazardous Substances (RoHS) Directive.

  • File Type: (PDF)
  • Updated: 12/2016
RoHS Certificates
China RoHS Certificate (PDF)

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.

  • File Type: (PDF)
  • Updated: 12/2016

Documentation & Support

See All LPDRAM Documentation
Technical Notes
Search (9) LPDRAM Technical Notes
Technical Notes


(E0599E20) This technical note describes Auto Temperature Compensated Self Refresh (ATCSR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0598E21) This technical note describes Deep Power Down (DPD), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0597E10) This technical note describes Partial Array Self Refresh (PASR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(TN-00-01) This technical note describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture.

  • File Type: PDF
  • Updated: 02/14/2013
Technical Notes


(TN-46-23) This technical note reviews the timing differences between the faster and slower LPDDR SDRAM speeds and explains how faster parts function compatibly with slower parts.

  • File Type: PDF
  • Updated: 02/04/2013
Search (9) LPDRAM Technical Notes

Parts with the same Data Sheet (2)

EDB4432BBBJ-1DAAT-F ( Current ) EDB4432BBBJ-1DAUT-F EDB4432BBBJ-1DAIT-F
Part Status Sampling Sampling Sampling
Technology LPDDR2 LPDDR2 LPDDR2
Density 4Gb 4Gb 4Gb
RoHS Yes Yes Yes
Depth 128Mb 128Mb 128Mb
Width x32 x32 x32
Voltage 1.2V 1.2V 1.2V
Package WFBGA WFBGA WFBGA
Pin Count 134-ball 134-ball 134-ball
Clock Rate 533 MHz 533 MHz 533 MHz
Data Rate LPDDR2-1066 LPDDR2-1066 LPDDR2-1066
Cycle Time 1.875ns 1.875ns 1.875ns
Op. Temp. -30C to +105C -40C to +125C -40C to +85C
Brand Micron Micron Micron

Where to Buy

Orderable Parts
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
EDB4432BBBJ-1DAAT-F-D Sampling Dry Pack N/A N/A N/A No N/A
EDB4432BBBJ-1DAAT-F-R Sampling Tape & Reel N/A N/A N/A No N/A
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