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Rev 1.2, LPDDR2 SDRAM, AT, IT, UT, WT, XT; EDB4416BBBH-1DIT-F, EDB8164B4PT-1DAT-F, EDB8164B4PT-1DIT-F, EDB8164B4PT-1D-F, EDBA164B2PR-1D-F, EDB8132B4PB-8D-F, EDB8132B4PM-1D-F
Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2002/95/EC, a.k.a. Restriction of Hazardous Substances (RoHS) Directive.
Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.
This technical note describes Deep Power Down (DPD), one of the low-power functions that have been adapted to Mobile DRAM.
This technical note describes Partial Array Self Refresh (PASR), one of the low-power functions that have been adapted to Mobile DRAM.
This technical note describes Auto Temperature Compensated Self Refresh (ATCSR), one of the low-power functions that have been adapted to Mobile DRAM.
This technical note describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture.
This technical note reviews the timing differences between the faster and slower LPDDR SDRAM speeds and explains how faster parts function compatibly with slower parts.