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MT46H64M32LFBQ-48 WT

Data Sheets (1)

Specs

Orderable Parts for: MT46H64M32LFBQ-48 WT
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT46H64M32LFBQ-48 WT:C Production N/A D9RWH N/A N/A No N/A
Detailed Specifications
Technology LPDDR Density 2Gb Part Status Production RoHS Yes
Depth 64Mb Width x32 Voltage 1.8V Package VFBGA
Pin Count 90-ball Clock Rate 208 MHz Data Rate LPDDR416 Cycle Time 5ns
Op. Temp. -25C to +85C Brand Micron

Sim Models & Software

Sim Models
IBIS
IBIS (ZIP)

Die Rev. C

  • File Type: ZIP
  • Updated: 11/21/2014
HSpice
HSpice (ZIP)

Die Rev. C

  • File Type: ZIP
  • Updated: 11/18/2013

RoHS Certificates

RoHS Certificates
RoHS Certificate of Compliance (PDF)

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2002/95/EC, a.k.a. Restriction of Hazardous Substances (RoHS) Directive.

  • File Type: (PDF)
  • Updated: 12/2016
RoHS Certificates
China RoHS Certificate (PDF)

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.

  • File Type: (PDF)
  • Updated: 12/2016

Documentation & Support

See All LPDRAM Documentation
Technical Notes
Search (9) LPDRAM Technical Notes
Technical Notes


(E0599E20) This technical note describes Auto Temperature Compensated Self Refresh (ATCSR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0597E10) This technical note describes Partial Array Self Refresh (PASR), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(E0598E21) This technical note describes Deep Power Down (DPD), one of the low-power functions that have been adapted to Mobile DRAM.

  • File Type: PDF
  • Updated: 02/26/2014
Technical Notes


(TN-00-01) This technical note describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture.

  • File Type: PDF
  • Updated: 02/14/2013
Technical Notes


(TN-46-23) This technical note reviews the timing differences between the faster and slower LPDDR SDRAM speeds and explains how faster parts function compatibly with slower parts.

  • File Type: PDF
  • Updated: 02/04/2013
Search (9) LPDRAM Technical Notes

Parts with the same Data Sheet (9)

MT46H64M32LFBQ-48 WT ( Current ) MT46H64M32LFBQ-48 AIT MT46H64M32LFBQ-48 IT MT46H128M16LFDD-48 AIT MT46H128M16LFDD-48 IT MT46H128M16LFDD-48 WT MT46H128M32L2KQ-48 IT MT46H128M32L2KQ-48 WT MT46H64M32LFKQ-5 IT MT46H256M32L4LE-48 WT
Part Status Production Production Production Production Production Production Production Production Production Production
Technology LPDDR LPDDR LPDDR LPDDR LPDDR LPDDR LPDDR LPDDR LPDDR LPDDR
Density 2Gb 2Gb 2Gb 2Gb 2Gb 2Gb 4Gb 4Gb 2Gb 8Gb
RoHS Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
Depth 64Mb 64Mb 64Mb 128Mb 128Mb 128Mb 128Mb 128Mb 64Mb 256Mb
Width x32 x32 x32 x16 x16 x16 x32 x32 x32 x32
Voltage 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V
Package VFBGA VFBGA VFBGA VFBGA VFBGA VFBGA WFBGA WFBGA WFBGA VFBGA
Pin Count 90-ball 90-ball 90-ball 60-ball 60-ball 60-ball 168-ball 168-ball 168-pin 168-ball
Clock Rate 208 MHz 208 MHz 208 MHz 208 MHz 208 MHz 208 MHz 208 MHz 208 MHz 200 MHz 208 MHz
Data Rate LPDDR416 LPDDR416 LPDDR416 LPDDR416 LPDDR416 LPDDR416 LPDDR416 LPDDR416 LPDDR400 LPDDR416
Cycle Time 5ns 5ns 5ns 5ns 5ns 5ns 5ns 5ns 5ns 5ns
Op. Temp. -25C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -25C to +85C -40C to +85C -25C to +85C -40C to +85C -25C to +85C
Brand Micron Micron Micron Micron Micron Micron Micron Micron Micron Micron

Where to Buy

Orderable Parts
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT46H64M32LFBQ-48 WT:C Production N/A D9RWH N/A N/A No N/A
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