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MT47H256M8EB-25E AIT

Data Sheets (1)

Data Sheet
  • File Type: PDF
  • Updated: 08/2012

Specs

Orderable Parts for: MT47H256M8EB-25E AIT
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT47H256M8EB-25E AIT:C Production N/A Z9PDM N/A N/A Yes 05/04/2011 N/A
Detailed Specifications
Density 2Gb Part Status Production RoHS Yes Depth 256Mb
Width x8 Voltage 1.8V Package FBGA Pin Count 60-ball
Clock Rate 400 MHz Cycle Time 2.5ns Op. Temp. -40C to +95C CL CL = 5
Data Rate DDR2-800

Sim Models & Software

Sim Models
Sim Model
HSpice (ZIP)

2.2 (Die Rev. C)

  • File Type: ZIP
  • Updated: 07/10/2013
Sim Model
IBIS (ZIP)

2.3 (Die Rev. C)

  • File Type: ZIP
  • Updated: 07/10/2013

RoHS Certificates

RoHS Certificates
RoHS Certificate of Compliance (PDF)

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2002/95/EC, a.k.a. Restriction of Hazardous Substances (RoHS) Directive.

  • File Type: (PDF)
  • Updated: 12/2016
RoHS Certificates
China RoHS Certificate (PDF)

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.

  • File Type: (PDF)
  • Updated: 12/2016

Documentation & Support

See All DDR2 SDRAM Documentation
Technical Notes
Search (19) DDR2 SDRAM Technical Notes
Technical Notes


(TN-00-01) This technical note describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture.

  • File Type: PDF
  • Updated: 02/14/2013
Technical Notes


(TN-47-04) This technical note details how DDR2 SDRAM consumes power and provides tools to estimate power consumption in a given system.

  • File Type: PDF
  • Updated: 03/18/2011
Technical Notes


(TN-47-19) This technical note focuses on the unique memory requirements of point-to-point design layouts and describes DDR2 features and functionality.

  • File Type: PDF
  • Updated: 03/18/2011
Technical Notes


(TN-47-14) This technical notes describes the tCKE timing parameter of DDR2 SDRAM.

  • File Type: PDF
  • Updated: 04/09/2010
Technical Notes


(TN-47-05) This technical note provides general guidelines for designing power circuitry for DDR2 memory; it includes the DDR2 voltage requirements and encompasses a sample reference design focused on the Texas Instruments Incorporated (TI) TPS51116 DDR2 memory power solution.

  • File Type: PDF
  • Updated: 04/08/2010
Search (19) DDR2 SDRAM Technical Notes

Parts with the same Data Sheet (2)

MT47H256M8EB-25E AIT ( Current ) MT47H128M16RT-25E AAT MT47H128M16RT-25E AIT
Part Status Production Production Production
Density 2Gb 2Gb 2Gb
RoHS Yes Yes Yes
Depth 256Mb 128Mb 128Mb
Width x8 x16 x16
Voltage 1.8V 1.8V 1.8V
Package FBGA FBGA FBGA
Pin Count 60-ball 84-ball 84-ball
Clock Rate 400 MHz 400 MHz 400 MHz
Cycle Time 2.5ns 2.5ns 2.5ns
Op. Temp. -40C to +95C -40C to +105C -40C to +95C
CL CL = 5 CL = 5 CL = 5
Data Rate DDR2-800 DDR2-800 DDR2-800

Where to Buy

Orderable Parts
Status Media FBGA Code SPD Data Chipset
Validation
PLP Start Date Alternative Part
MT47H256M8EB-25E AIT:C Production N/A Z9PDM N/A N/A Yes 05/04/2011 N/A
Contact Your Sales Rep
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Check with Distributors
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