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A world of ideas, memories, and knowledge - accessed, managed, and connected in ways never imagined. Memory makes it all possible.
Describes bypass capacitor selection for high-speed designs.
This technical note describes how GDDR6 leverages features of GDDR5 and GDDR5X to be the best-suited memory for ultra-fast DRAM.
This technical note compares GDDR5 and GDDR5X and discusses the evolution of GDDR5X.
Details of how DDR4 SDRAM consumes power and provides the tools that system designers can use to estimate power consumption.
This technical note covers DDR2 simulation, adding to Micron's extensive array of design support tools for system designers.
This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products.
Describes proper interpretation and use of VOL and VOH specifications.
This technical note provides sorted pin assignment tables and pin location figures for use in DDR2 DIMM signal identification, tracing, and troubleshooting.
This technical note covers DDR2 package sizes and layout requirements.
This technical note provides the system-level designer with an overview of the DDR2 SODIMM family and offers insight into termination techniques utilized on the commands and addresses for these modules.