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A world of ideas, memories, and knowledge - accessed, managed, and connected in ways never imagined. Memory makes it all possible.
This technical note addresses the power-saving features and power calculations of low-power Mobile LPDRAM memory.
This technical note describes Deep Power Down (DPD), one of the low-power functions that have been adapted to Mobile DRAM.
This technical note describes Partial Array Self Refresh (PASR), one of the low-power functions that have been adapted to Mobile DRAM.
This technical note reviews the timing differences between the faster and slower LPDDR SDRAM speeds and explains how faster parts function compatibly with slower parts.
This technical note describes Auto Temperature Compensated Self Refresh (ATCSR), one of the low-power functions that have been adapted to Mobile DRAM.
This technical note gives an overview of the functional and mechanical differences between low-power and standard DDR and a description of exclusive features of LPDDR.
This technical note provides guidance for the development of multilayer board designs with recommendations to improve signal integrity and reduce noise for LPDDR and LPSDR devices in unterminated point-to-point and point-to-multipoint systems.
This technical note provides information on optimal wafer-thinning processes to meet specific customer requirements.
This technical note describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture.