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A world of ideas, memories, and knowledge - accessed, managed, and connected in ways never imagined. Memory makes it all possible.
This technical note describes the block lock feature on Micron's MT29F NAND Flash memory devices.
This technical note describes the significant performance increases that large-block NAND Flash devices offer over their small-block NAND Flash counterparts for READ, PROGRAM, and ERASE operations.
This technical note describes how to enable and use the chip enable pin reduction feature in Micron's NAND Flash memory devices and discusses reduction limitations based on NAND package and system configuration.
This technical note highlights the significant performance gains realized when using the PROGRAM PAGE CACHE MODE command in Micron's NAND Flash devices.
Download the low-level driver described in this document here.
This technical note provides an introduction to NAND Flash and how to design it into your next product.
This technical note discusses a boot from NAND solution for applications using Micron's MT29F1G08ABA NAND Flash with the TI OMAP 2420 processor.
This technical note describes the performance benefits of Micron two-plane commands and provides implementation guidelines for making the best use of two-plane capabilities.
This technical note highlights the importance of wear leveling, explains two wear-leveling techniques, and discusses implementing wear leveling.
This technical note explains four options for determining the NAND Flash ready/busy device status.