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A world of ideas, memories, and knowledge - accessed, managed, and connected in ways never imagined. Memory makes it all possible.
This technical note describes how to convert a system design.
This technical note compares features of the Micron N25Q and Spansion S25FL256S Flash memory devices. Japanese language version.
This technical note provides direction on how to properly apply and remove the power supply to a NOR Flash device from the MT25Q, MT25T, and MT35X families.
This technical note discusses how a single 24-ball BGA package (6 x 8 mm) can support a variety of flash products, enabling designers to offer a range of densities, features and performance levels simply by replacing the installed flash device.
Application Note 309014
This technical note describes the process for converting a system design from the Micron M29EW devices to MT28EW single-level cell NOR Flash devices, including 128Mb, 256Mb, 512Mb, and 1Gb densities. PCN's 32162, 32163
This technical note describes the process for converting a system design for the Macronix MX29GL-G/F and MX68GL-G devices to a system design for the MT28EW parallel NOR Flash devices, 128Mb, 256Mb, 512Mb, and 1Gb densities.
This technical note compares features of the Micron N25Q (128Mb) and Macronix MX25L12835F Flash memory devices.
This technical note compares the features of the Micron MT25Q (512Mb) Flash memory device with the Macronix MX66L51235F Flash memory device.