logo-micron

Add Bookmark(s)


To:

Email


Bookmark(s) shared successfully!

Please provide at least one email address.

Innovations

Milestone Timeline & Awards

Innovation

Growth Through Innovation
For over 35 years, we have been instrumental to the world’s most significant technology advancements. With a track record of innovation that includes over 26,000 patents, our team is transforming the way the world uses data and sparking countless possibilities in technology.

2015
  • ITC Hall of Fame –Recognized as the 2015 inductee to the Idaho Technology Council Hall of Fame
  • CEO Mark Durcan named as Tech CEO Council Chair
  • Micron ranked No. 1 on Top 50 Employers in Electronic Design magazine
  • Boise State University receives $25M gift from the Micron Foundation to create Materials Research Center
  • Micron and Intel unveil breakthrough memory 3D XPoint™ technology
  • Micron and Intel reveal new 3D NAND Flash Memory extending Moore's Law for flash storage
2014
  • Micron Announces Industry's First Monolithic 8Gb DDR3 SDRAM
  • Micron 16nm NAND Flash Memory Awarded TechInsights’ Most Innovative Memory Device and Semiconductor of the Year
  • Micron and Altera Named Design Team of the Year at Prestigious UBM Tech’s ACE Awards

2013

  • Micron Unveils 16-Nanometer Flash Memory Technology
  • Micron's Hybrid Memory Cube Named Memory Product of the Year by EE Times and EDN
  • Micron Introduces Industry's Smallest 128-Gigabit NAND Flash Device
  • Micron unveils new PCIe I/O accelerator
  • Micron, TE unveil reduced-height, single-sided DDR3 modules
2012
  • EE Times 40th Anniversary Edition – Hybrid Memory Cube – Top 10 Technologies
  • Micron’s C400 SSD receives Storage Vision’s Enabling Consumer Storage Technology Award
  • Micron adds 512Mb PCM product to mobile portfolio
  • Micron and AgigA to develop nonvolatile DIMM technology
  • Micron announces 30nm DDR3L-RS memory
  • Hybrid Memory Cube Consortium announces draft spec
  • Micron announces availability of 45nm, 1Gb PCM for mobile devices
  • Micron announces 1 GHz, 2Gb and 4Gb DDR3 for high-performance networking and graphics segments
  • Micron launches C400 mSATA SSDs for ultrathin laptops
  • Micron, Xilinx demonstrate first working RLDRAM 3 prototypes
  • Micron introduces first 2.5-inch PCIe enterprise SSD
  • Micron launches low-standby-power DDR3Lm SODIMM for ultrathin and tablet markets
2011
  • Micron Ranks First in Science Strength Category of Patent Board Semiconductor Industry Scorecard
  • IBM to make Micron’s Hybrid Memory Cube using its 3D chipmaking process
  • Intel and Micron announce first 128GB 20nm NAND Flash.
  • Micron debuts first 1Gbit SPI NOR flash memory
  • Micron introduces industry’s broadest portfolio of LRDIMMs.
  • Samsung and Micron team up to launch Hybrid Memory Cube Consortium.
  • Micron introduces RealSSD™ P400e MLC Enterprise SSD.
  • Micron launches RealSSD™ C400 Self-Encrypting SSD.
  • Micron’s RLDRAM 3 is selected for Alcatel-Lucent’s industry-first 400Gb-capable chipset.
  • Micron launches RealSSD™ P320h PCI Express (PCIe) SSD.
  • Micron announces 20nm NAND process technology.
  • Micron launches Product Longevity Program (PLP).
  • Micron debuts Hybrid Memory Cube technology.
2010
  • Intel and Micron introduce 25-nanometer NAND.
  • Micron and Nanya introduce 42-nanometer DRAM.
  • Intel and Micron are first to sample 3-bit-per-cell NAND Flash memory on industry-leading 25-nanometer silicon process technology.
  • Micron introduces RealSSD P300 solid-state drive (SSD).
2009
  • Intel and Micron develop a new 3-bit-per-cell multi-level cell (MLC) NAND technology.
  • Micron delivers RealSSD™ C300 Solid-State Drives.
2008
  • Micron continues leadership in energy-efficient memory designs with new low-voltage DDR3 and higher-density DDR2 parts.
  • Intel and Micron are the first to deliver a sub-40 nanometer NAND Flash memory device.
  • Micron introduces next-generation RealSSD™ solid state drives for enterprise server and notebook applications.
  • Micron collaborates with Sun Microsystems to extend lifespan of flash-based storage and achieves one million write cycles.
  • Intel and Micron move into mass production with 34 nanometer NAND Flash.
  • Infineon and Micron develop next-generation data storage solution for HD-SIM cards and collaborate to push HD-SIM card capacity beyond 128MB.
2007
  • Micron opens a new manufacturing facility in China.
  • Micron reduces data center power consumption with new family of energy-efficient products.
  • Micron introduces RealSSD™ family of solid state drives.
2006
  • Micron introduces the industry's first NAND Flash memory device built on 50 nanometer process technology.
  • Micron introduces the world's first 8-megapixel image sensor on a 1/2.5-inch optical format (based on a 1.75-micron pixel design).
  • Micron introduces the world's densest server memory module (16-gigabyte).
  • Micron announces development of a 1.4-micron pixel image sensor design.
  • Micron begins shipping 8-gigabit and 4-gigabit NAND Flash devices, ideal for MP3, USB drive, and flash card applications.
  • Micron expands assembly and test facility in Singapore and effectively doubles its capacity.
  • Micron introduces Osmium™ packaging technology.
  • Micron receives #1 ranking in the semiconductor industry in iplQ's 2006 Patent Scorecard for the fifth consecutive year.

2005

  • Micron introduces the industry's fastest 1.8V flash memory for mobile applications.
  • Micron introduces a family of Mobile LPDRAM devices that provide low standby power and improved stackability.
  • Micron introduces Endur-IC™ technology, which delivers low power consumption, increased reliability, and an overall robustness required for mobile applications.
2004
  • Micron ships its first production 90nm, 2-gigabit NAND Flash memory products.
2003
  • Micron delivers the industry's first 4-gigabyte DDR SDRAM registered dual in-line memory module (DIMM) to Intel using the Company's 1-gigabyte DDR SDRAM manufactured on the 0.11µm process.
  • Micron introduces the 1.3-megapixel CMOS image sensor, which achieves image quality comparable to CCD while taking advantage of the benefits of CMOS technology.
2002
  • Micron demonstrates the industry’s first 1-gigabit double data rate (DDR) SDRAM components manufactured on 0.11µm process technology.
2000
  • Micron establishes test operations in Lehi, Utah, and opens a module assembly and testing operation in the United Kingdom.
1999
  • Crucial Technology launches its direct memory upgrade business in the United Kingdom.
  • Micron opens the UK Design Centre to support Micron’s research and development efforts, including the development of embedded products.
1997
  • Dell Computer announces it has received 256-megabit DRAM samples from Micron.
1996
  • Micron creates Crucial Technology, a division to market and sell memory upgrades to end-users.
  • ZEOS International, Ltd., Micron Computer, Inc., and Micron Custom Manufacturing Services, Inc. (MCMS) merge to become Micron Electronics, Inc.
1995
  • A site near Lehi, Utah, is selected for the new manufacturing complex.
1993
  • Micron begins a $60 million expansion project.
1992
  • Sampling begins for the 16-megabit DRAM.
1991
  • A new test facility is completed.
  • Micron begins the transition to the 4-megabit DRAM.
  • Micron creates Edge Technology, Inc., (a precursor to Micron Electronics) to manufacture memory-intensive personal computers at competitive prices.
1990
  • A second assembly facility is completed.
1989
  • Major portions of a $250 million expansion project, including a third fabrication facility, are completed.
1988
  • Micron introduces the 256K video RAM, 16K, 64K, and 256K fast static RAM, and add-in memory products assembled by Micron's Memory Applications Group (MAG).
1987
  • Micron introduces the 1-megabit DRAM.
1984
  • Micron's 256K DRAM is introduced.
  • A second fabrication plant, central utilities plant, and an assembly and test facility are constructed.
1983
  • First "shrink" of Micron’s 64K DRAM die is completed.
  • First assembly and test facility is completed.
1981
  • First fabrication facility is completed.
  • First 64K DRAM product is shipped.
1980
  • Ground is broken for a 50,000-square-foot wafer fabrication plant on 200 acres in Boise.
1979
  • Engineers finalize design for a 64K DRAM.
1978
  • Micron Technology, Inc., is headquartered in Boise, Idaho, and incorporated under the laws of the state of Idaho.