Growth Through Innovation
For nearly 40 years, we have been instrumental to the world’s most significant technology advancements. With a track record of innovation that includes over 26,000 patents, our team is transforming the way the world uses data and sparking countless possibilities in technology.
- Micron opens new clean-room facility for research and development in Boise
- ITC Hall of Fame –Recognized as the 2015 inductee to the Idaho Technology Council Hall of Fame
- CEO Mark Durcan named as Tech CEO Council Chair
- Micron ranked No. 1 on Top 50 Employers in Electronic Design magazine
- Boise State University receives $25M gift from the Micron Foundation to create Materials Research Center
- Micron and Intel unveil breakthrough memory 3D XPoint™ technology
- Micron and Intel reveal new 3D NAND Flash Memory extending Moore's Law for flash storage
- Micron Announces Industry's First Monolithic 8Gb DDR3 SDRAM
- Micron 16nm NAND Flash Memory Awarded TechInsights’ Most Innovative Memory Device and Semiconductor of the Year
- Micron and Altera Named Design Team of the Year at Prestigious UBM Tech’s ACE Awards
- Micron Unveils 16-Nanometer Flash Memory Technology
- Micron's Hybrid Memory Cube Named Memory Product of the Year by EE Times and EDN
- Micron Introduces Industry's Smallest 128-Gigabit NAND Flash Device
- Micron unveils new PCIe I/O accelerator
- Micron, TE unveil reduced-height, single-sided DDR3 modules
- EE Times 40th Anniversary Edition – Hybrid Memory Cube – Top 10 Technologies
- Micron’s C400 SSD receives Storage Vision’s Enabling Consumer Storage Technology Award
- Micron adds 512Mb PCM product to mobile portfolio
- Micron and AgigA to develop nonvolatile DIMM technology
- Micron announces 30nm DDR3L-RS memory
- Hybrid Memory Cube Consortium announces draft spec
- Micron announces availability of 45nm, 1Gb PCM for mobile devices
- Micron announces 1 GHz, 2Gb and 4Gb DDR3 for high-performance networking and graphics segments
- Micron launches C400 mSATA SSDs for ultrathin laptops
- Micron, Xilinx demonstrate first working RLDRAM 3 prototypes
- Micron introduces first 2.5-inch PCIe enterprise SSD
- Micron launches low-standby-power DDR3Lm SODIMM for ultrathin and tablet markets
- Micron Ranks First in Science Strength Category of Patent Board Semiconductor Industry Scorecard
- IBM to make Micron’s Hybrid Memory Cube using its 3D chipmaking process
Intel and Micron announce first 128GB 20nm NAND Flash.
- Micron debuts first 1Gbit SPI NOR flash memory
- Micron introduces industry’s broadest portfolio of LRDIMMs.
Samsung and Micron team up to launch Hybrid Memory Cube Consortium.
- Micron introduces RealSSD™ P400e MLC Enterprise SSD.
- Micron launches RealSSD™ C400 Self-Encrypting SSD.
- Micron’s RLDRAM 3 is selected for Alcatel-Lucent’s industry-first 400Gb-capable chipset.
- Micron launches RealSSD™ P320h PCI Express (PCIe) SSD.
- Micron announces 20nm NAND process technology.
- Micron launches Product Longevity Program (PLP).
- Micron debuts Hybrid Memory Cube technology.
Intel and Micron introduce 25-nanometer NAND.
- Micron and Nanya introduce 42-nanometer DRAM.
- Intel and Micron are first to sample 3-bit-per-cell NAND Flash memory on industry-leading 25-nanometer silicon process technology.
- Micron introduces RealSSD P300 solid-state drive (SSD).
Intel and Micron develop a new 3-bit-per-cell multi-level cell (MLC) NAND technology.
- Micron delivers RealSSD™ C300 Solid-State Drives.
Micron continues leadership in energy-efficient memory designs with new low-voltage DDR3 and higher-density DDR2 parts.
- Intel and Micron are the first to deliver a sub-40 nanometer NAND Flash memory device.
- Micron introduces next-generation RealSSD™ solid state drives for enterprise server and notebook applications.
- Micron collaborates with Sun Microsystems to extend lifespan of flash-based storage and achieves one million write cycles.
- Intel and Micron move into mass production with 34 nanometer NAND Flash.
- Infineon and Micron develop next-generation data storage solution for HD-SIM cards and collaborate to push HD-SIM card capacity beyond 128MB.
Micron opens a new manufacturing facility in China.
- Micron reduces data center power consumption with new family of energy-efficient products.
Micron introduces RealSSD™ family of solid state drives.
- Micron introduces the industry's first NAND Flash memory device built on 50 nanometer process technology.
Micron introduces the world's first 8-megapixel image sensor on a 1/2.5-inch optical format (based on a 1.75-micron pixel design).
Micron introduces the world's densest server memory module (16-gigabyte).
Micron announces development of a 1.4-micron pixel image sensor design.
Micron begins shipping 8-gigabit and 4-gigabit NAND Flash devices, ideal for MP3, USB drive, and flash card applications.
Micron expands assembly and test facility in Singapore and effectively doubles its capacity.
Micron introduces Osmium™ packaging technology.
Micron receives #1 ranking in the semiconductor industry in iplQ's 2006 Patent Scorecard for the fifth consecutive year.
Micron introduces the industry's fastest 1.8V flash memory for mobile applications.
Micron introduces a family of Mobile LPDRAM devices that provide low standby power and improved stackability.
Micron introduces Endur-IC™ technology, which delivers low power consumption, increased reliability, and an overall robustness required for mobile applications.
Micron ships its first production 90nm, 2-gigabit NAND Flash memory products.
Micron delivers the industry's first 4-gigabyte DDR SDRAM registered dual in-line memory module (DIMM) to Intel using the Company's 1-gigabyte DDR SDRAM manufactured on the 0.11µm process.
Micron introduces the 1.3-megapixel CMOS image sensor, which achieves image quality comparable to CCD while taking advantage of the benefits of CMOS technology.
Micron demonstrates the industry’s first 1-gigabit double data rate (DDR) SDRAM components manufactured on 0.11µm process technology.
Micron establishes test operations in Lehi, Utah, and opens a module assembly and testing operation in the United Kingdom.
Crucial Technology launches its direct memory upgrade business in the United Kingdom.
Micron opens the UK Design Centre to support Micron’s research and development efforts, including the development of embedded products.
Dell Computer announces it has received 256-megabit DRAM samples from Micron.
Micron creates Crucial Technology, a division to market and sell memory upgrades to end-users.
ZEOS International, Ltd., Micron Computer, Inc., and Micron Custom Manufacturing Services, Inc. (MCMS) merge to become Micron Electronics, Inc.
A site near Lehi, Utah, is selected for the new manufacturing complex.
Micron begins a $60 million expansion project.
Sampling begins for the 16-megabit DRAM.
A new test facility is completed.
Micron begins the transition to the 4-megabit DRAM.
Micron creates Edge Technology, Inc., (a precursor to Micron Electronics) to manufacture memory-intensive personal computers at competitive prices.
A second assembly facility is completed.
Major portions of a $250 million expansion project, including a third fabrication facility, are completed.
Micron introduces the 256K video RAM, 16K, 64K, and 256K fast static RAM, and add-in memory products assembled by Micron's Memory Applications Group (MAG).
Micron introduces the 1-megabit DRAM.
Micron's 256K DRAM is introduced.
A second fabrication plant, central utilities plant, and an assembly and test facility are constructed.
First "shrink" of Micron’s 64K DRAM die is completed.
First assembly and test facility is completed.
First fabrication facility is completed.
First 64K DRAM product is shipped.
Ground is broken for a 50,000-square-foot wafer fabrication plant on 200 acres in Boise.
Engineers finalize design for a 64K DRAM.
Micron Technology, Inc., is headquartered in Boise, Idaho, and incorporated under the laws of the state of Idaho.