Throughout our organization our team members and programs are receiving industry accolades. From award-winning engineering expertise to top notch leadership programs, we are proud of our excellence across the board.
Supply Chain Resiliency Industry Leader of the Year (Global Supply Chain Resiliency Council and Resilinc)
Micron named one of the most popular Fortune 500 companies to work for according to employees (Business Insider, Indeed.com)
June 2016 - Core Technology
Micron received an award from Ericsson as its Supplier of the Year for Core Technology
April 2016 - Xi’an National Independent Innovation Demonstration Zone
Micron received three awards from the 2015 corporate recognition Conference of Construction for the Xi’an National Independent Innovation Demonstration Zone: Advanced Manufacturing Excellence Enterprise Award, Open Economy Excellent Enterprise Award and HTZ Key Construction & Advanced Enterprise Award.
2015 ITC Hall of Fame - Idaho Technology Council
In October, the Idaho Technology Council recognized Micron as the 2015 inductee to the ITC Hall of Fame. This is the first time the Council recognized an entire company as an inductee. Micron was recognized for its vast Idaho footprint, innovative presence and global technology.
Micron ranked No. 1 on Top 50 Employers in Electronic Design magazine
CEO Mark Durcan named as Tech CEO Council Chair
Micron 16nm NAND Flash Memory Awarded TechInsights’ Most Innovative Memory Device and Semiconductor of the Year
Micron and Altera Named Design Team of the Year at Prestigious UBM Tech’s ACE Awards
Most Innovative Flash Memory Technology – Flash Memory Summit Award
Micron’s 16nm NAND process technology was chosen by Flash Memory Summit as the 2013 Best of Show award winner in the category of Most Innovative Flash Memory Technology. Our 16nm NAND enables the industry’s smallest 128Gb MLC NAND Flash memory devices and could enable nearly 6TB of storage on a single wafer. The Flash Memory Summit is dedicated entirely to Flash memory and its applications, and its annual Best of Show Awards honor the most innovative products available.
Memory Product of the Year – EE Times and EDN
Micron’s Hybrid Memory Cube (HMC), named Memory Product of the Year, was recognized as the long-awaited answer to a dilemma known as the memory wall—referring to the growing gap between the performance improvement rate of DRAM versus processor data consumption rate. HMC delivers bandwidth and efficiencies a leap beyond current device capabilities. The EE Times and EDN ACE Awards Event is held annually at Design West, a technical conference for electronics design engineers, entrepreneurs, and technology professionals.
Top 10 Technologies – EE Times 40th Anniversary Edition
HMC made EE Times’ 40th Anniversary list of top 10 technologies that they believe will redefine the electronics industry in an increasingly interactive world.
Semiconductor of the Year Award – UBM TechInsights
Intel/Micron 20nm NAND received the annual Insight Award for Semiconductor of the Year from UBM TechInsights. The 20nm process is used for high-capacity, multilevel cell (MLC) NAND flash devices, enabling new breakthroughs in storage for consumer and compute applications. The Insight Awards recognize achievements in the semiconductor and electronics industry and are one of the most highly regarded awards for technical innovation.
Hot 100 Products for 2012 – Electronic Design News
Micron’s DDR4 module was named one of the “100 Hot Products of 2012.” Co-developed by Nanya and based on Micron's 30nm technology, the production-ready 4Gb, x8 DDR4 device is the first piece of a portfolio that will include RDIMMs, LRDIMMs, SODIMMs, and UDIMMs (standard and ECC). The 2012 EDN Hot 100 highlights the electronics industry's most significant products of the year based on innovation, significance, usefulness and popularity.
Most Innovative Flash Memory Consumer Application – Flash Memory Summit Award
Micron’s C400 mSATA SSD was honored by the Flash Memory Summit with a Best of Show Award in the Most Innovative Flash Memory Consumer Application category. The mSATA was recognized for setting a new standard in lightweight, small form factor packaging while delivering the power savings and high performance demanded of storage solutions by the emerging ultrathin market. The Flash Memory Summit is dedicated entirely to Flash memory and its applications and annually bestows Best-in-Show awards to groundbreaking technologies.
Best Technology of 2011—The Linley Group Analysts’ Choice Awards
Micron’s revolutionary 3-D Hybrid Memory Cube (HMC) was chosen as Best Technology of 2011 by communications semiconductor experts at The Linley Group. The firm’s first annual Analysts’ Choice Awards recognized the top microprocessor-related products of 2011; for the Best Technology Award, the Linley Group’s team of technology analysts considered the merits of the leading, forward-looking technologies announced in 2011. HMC won for its ability to enable a new generation of applications ranging from large-scale networking and high-performance computing to industrial automation and consumer products, thanks to HMC’s greater density, lower latency, higher bandwidth, and better power efficiency compared to conventional memory technologies.
Enabling Consumer Storage Technology—Storage Visions Conference Award
Micron’s RealSSD™ C400 SED was honored with the Enabling Consumer Storage Technology Award at the 2012 Storage Visions Conference. The C400 SED is a client-focused hard drive replacement with hardware-based self encryption that is ideal for computing applications that need easily integrated, cost-effective data protection. Storage Visions awards recognize companies who are advancing state-of-the art in storage technologies utilized in consumer electronics, the media and entertainment industries, and visionary products for the digital content value chain.
Most Innovative Flash Memory Technology—Flash Memory Summit Award
Flash Memory Summit (FMS) honored Micron and Intel with its Most Innovative Flash Memory Technology award in recognition of the companies’ industry-leading 20-nanometer NAND Flash memory process technology. The 20nm 8-gigabyte (GB) NAND device, produced by the Micron-Intel joint venture IM Flash Technologies, delivers the industry’s highest capacity in the smallest form factor. The Flash Memory Summit, dedicated entirely to flash memory and its applications, annually awards Best-in-Show recognition to ground-breaking technologies.
Silver Telly Award for a promotion video
Micron Technology is accustomed to winning awards for its innovative products, but it’s not every day the company earns an honor for its marketing efforts. Micron was recognized for a promotional video it created called Power in Progress with a Silver Telly Award for Corporate Image and a Bronze Telly Award for Employee Communications. For 32 years, Telly Awards have been granted to the finest works from advertising agencies, production companies, television stations, cable companies, interactive agencies and corporations worldwide.
JEDEC Award for Technical Achievement in DDR3 and Module Standards
In January, JEDEC honored two of our engineers—Todd Farrell and George Pax—with Technical Recognition Awards. The award is JEDEC’s most significant award and recognizes outstanding contributions to technology standardization efforts. Todd was recognized for his lead role in writing the DDR3 spec, while George was honored for his work expanding the breadth of the standard for DDR3 modules.
Most Innovative NAND Process Technology—Semiconductor Insights Award
Semiconductor Insights awarded Micron’s 32Gb 34nm NAND Flash with its Most Innovative Process Technology award. Being the first company to develop NAND on such a small process node also allowed us to create the highest-density MLC chip available at the time. The INSIGHT Awards program recognizes companies for achieving great technical strides through innovative design and technical advancements in the semiconductor industry, shaping the world we live in. Read more.
Most Innovative DRAM Design—Semiconductor Insights Award
Employing the smallest DRAM cell size helped our 1Gb 50nm DDR2 earn the prestigious 2008 Insight Award for Most Innovative DRAM. After completing their analysis Semiconductor Insights called it the most advanced DRAM process technology they’d ever seen. This was the third year in a row Micron DRAM won this award. Read more.
Supplier Excellence Award—Hitachi
Hitachi recognized Micron as a winner of their Supplier Excellence award for performance in 2008.
Best Electronics Cluster Supplier—Continental
Continental, recognizing Micron’s dedication to the automotive market, awarded Micron "Best Electronics Cluster Supplier" for 2007.