Micron and Intel Produce Breakthrough Memory Technology
Micron and Intel have unveiled 3D XPoint™ technology, a new category of nonvolatile memory that addresses the need for high-performance, high-endurance, and high-capacity memory and storage. 3D XPoint technology is up to 1,000 times faster and has up to 1,000 times greater endurance than NAND, but is 10 times denser than conventional memory. It’s a breakthrough technology that delivers game-changing performance for memory and storage solutions and enables entirely new applications.
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3D XPoint Architecture
The 3D XPoint innovative, transistor-less cross point architecture creates a three-dimensional checkerboard where memory cells sit at the intersection of words lines and bit lines, allowing the cells to be addressed individually. As a result, data can be written and read in small sizes, leading to fast and efficient read/write processes.
3D XPoint Technology Die
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