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232-Layer NAND Flash Memory

The next level of storage performance and density for a new wave of end-to-end technology innovation.


232-Layer NAND More Layers, More Innovation, More Advanced

Micron extends 3D NAND technology leadership, 232-layer NAND now shipping.

High Performance

With the industry’s fastest NAND I/O speed of 2.4 gigabytes per second (GB/s), Micron's 232-layer NAND delivers the low-latency and high-throughput requirements of data-centric workloads, such as artificial intelligence, unstructured databases, real-time analytics, and cloud computing.1

1NAND I/O speed is 1.6GB/s at the time of market introduction

Data Density

World's densest NAND offers customers design flexibility while enabling the highest TLC density per square millimeter ever produced at 14.6 Gb/mm2. The areal density is between 35% and 100% greater than competing TLC products.2

2Based on comparison of NAND currently shipping at time of announcement

Ubiquitous Applications

Greater storage capacity — up to 1 terabit per die and 2 terabyte per package, allowed by increased layer stacking — provides more storage in more devices, enabling smarter, more functional devices of all kinds, from edge to cloud.

Market Segments

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Thin and light mobile laptop designs must balance the needs of peak performance, long-lasting battery life and sleek form factor options. Thanks to package size reductions of up to 28% over previous generations, Micron 232-layer NAND customers don’t have to compromise storage capacity for mobility and portability when using thin, light laptops.

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Micron’s advanced process technology enables NAND flash memory innovation that paves the way for mobile storage solutions optimized for space-constrained and power-conscious mobile end-user devices. Micron 232-layer NAND will allow low-power applications to provide seamless experiences while users multitask, download or access their favorite content.

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Intelligent Edge

The smaller physical footprint, increased density and low power consumption of 232-layer NAND intersect with the emerging demand for faster, smaller, power-efficient storage at the edge. With high-capacity, power-efficient storage at the edge, we will see greater innovation and demand for storage across a number of new applications and services.

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Data Center

Micron’s 232-layer NAND offers data centers high-performance, high-capacity, high-density storage at improved energy efficiently per bit than prior generation NAND. These are critical advancements for data center operators who must balance constantly growing volumes of data while also meeting power, real estate and sustainability initiatives.

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