Micron PSRAM Technical Notes

Title and Description	ID Number	Last Update
TN-00-01: Moisture Absorption in Plastic Packages - Describes the shipping procedures that ensure Micron’s customers receive memory devices that do not exhibit the popcorn effect	TN-00-01	Mar 2007
TN-00-06: Bypass Capacitor Selection for High-Speed Designs	TN-00-06	Sep 1999
TN-00-07: IBIS Behavioral Models	TN-00-07	Sep 1999
TN-00-08: Thermal Applications - Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature.	TN-00-08	Feb 2007
TN-00-09: Accelerate Design Cycles With Micron Simulation Models	TN-00-09	Oct 2006
TN-00-14: Understanding the Quality and Reliability Requirements for Bare Die Applications	TN-00-14	Sep 2001
TN-00-15: Recommended Soldering Parameters	TN-00-15	Mar 2007
TN-00-17: Timing Specification Derating for High Capacitance Output Loading - Describes how to create capacitance derating data for Micron products that can then be used in preliminary evaluations of system timing	TN-00-17	May 2004
TN-00-18: Uprating of Semiconductors for High-Temperature Applications - Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer’s environmental specifications	TN-00-18	Feb 2007
TN-00-19: Thinning Considerations for Wafer Products - Information on optimal wafer-thinning processes to meet specific customer requirements	TN-00-19	Nov 2004
TN-00-20: The Value of Signal Integrity - Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life	TN-00-20	Jun 2005
TN-45-01: Functional Differences Between CellularRAM 1.0 and CellularRAM 1.5 - Discusses the functional difference between the CellularRAM 1.0 and CellularRAM 1.5 memory devices	TN-45-01	Aug 2005
TN-45-04: CellularRAM Multiplexed Async/Burst Operation - Discusses multiplexing a non-multiplexed CellularRAM device at the substrate level	TN-45-04	Mar 2005
TN-45-06: Density Migration for x16 Burst Multiplexed PSRAM Introduction - Discusses the design differences to account for when migrating a burst multiplexed device from 16Mb to 64Mb	TN-45-06	Jan 2006
TN-45-07: Implementing CellularRAM® 2.0 x32 with Two CellularRAM 1.5 x16 Devices - Documents how the x32 CR2.0 memory interface can be emulated using a two-die stack of x16 CR 1.5 devices.	TN-45-07	Mar 2007
TN-45-08: 64Mb Async/Page CellularRAM P25A to P25Z Transition Guide - Discusses migrating a design based on the async/page MT45W4MW16P (P25A) to the MT45W4MW16PC (P25Z)	TN-45-08	Jan 2005
TN-45-09: 64Mb Burst CellularRAM P25A to P25Z Transition Guide - Discusses migrating a design based on the async/page/burst MT45W4MW16B (P25A) to MT45W4MW16BC (P25Z)	TN-45-09	Jan 2005
TN-45-10: Designing Applications with the x16 Burst A/D Multiplexed Interface - Discusses the differences between a burst non-A/D MUX and burst A/D MUX device	TN-45-10	Jan 2005
TN-45-13: Using CellularRAM Memory to Replace UtRAM - Assists migration from a 128Mb UtRAM design (K1B2816B6M) to Micron 128Mb CellularRAM memory (MT45W8MW16B). Both hardware and software changes are covered.	TN-45-13	Feb 2006
TN-45-14: Using CellularRAM Memory to Replace Fujitsu 3V FCRAM - Discusses replacing Fujitsu 3V FCRAM with Micron CellularRAM memory	TN-45-14	Mar 2006
TN-45-15: Row Boundary Crossing Functionality in CellularRAM™ Memory - Explains row boundary crossing in Micron CellularRAM memory devices	TN-45-15	Sep 2007
TN-45-16: Using CellularRAM Memory to Replace Fujitsu 1.8V FCRAM - Discusses replacing Fujitsu 1.8V FCRAM with Micron CellularRAM memory	TN-45-16	Mar 2006
TN-45-17: Using CellularRAM® Memory to Replace Single- and Dual-Chip Select SRAM - Discusses migrating a single- or dual-chip select SRAM design to Micron® CellularRAM® memory. Both hardware and software changes are covered.	TN-45-17	Jan 2007
TN-45-18: Using CellularRAM® Memory to Replace NEC Mobile Specified RAM (µPD46128512) - Discusses migrating a 128Mb NEC Mobile Specified RAM design (µPD46128512) to Micron 128Mb CellularRAM memory (MT45W8MW16B). Both hardware and software changes are covered.	TN-45-18	Mar 2006
TN-45-20: Low-Power Options for Async/Page CellularRAM - Discusses the low-power options available to customers on async/page CellularRAM memory devices	TN-45-20	May 2006
TN-45-22: Variable vs. Fixed Latency CellularRAM™ Operation - This technical note assists designers in understanding the differences between CellularRAM variable and fixed latency operations.	TN-45-22	Aug 2006
TN-45-23: Using CellularRAM Memory on a NOR FLASH Bus - Discusses design considerations when placing a CellularRAM memory device on a NOR Flash bus	TN-45-23	Aug 2006
TN-45-24: Fixed-Latency Operation in CellularRAM™ 1.0 Devices - Details how Micron has enhanced CellularRAM CR1.0 functionality	TN-45-24	Aug 2006
TN-45-25: WAIT Alignment for Micron CellularRAM Devices - Describes the implementation of WAIT functionality for asynchronous and burst operations	TN-45-25	Feb 2007
TN-45-27: Using Micron Asynchronous PSRAM with ADI ADSP-BF53x Blackfin® Processors - Describes the design requirements for a seamless memory connection between Analog Device’s Blackfin® processors and Micron® 70ns, 8Mb asynchronous PSRAM devices.	TN-45-27	Jun 2007
TN-45-28: Using a Micron® CellularRAM® Device with the AMCC PPC405EZ Embedded Processor - Describes the design requirements for a seamless memory connection between the PPC405EZ and a Micron CellularRAM device.	TN-45-28	Jun 2007
TN-45-29: Using Micron® Asynchronous PSRAM with the NXP LPC2292 and LPC2294 Microcontrollers - Describes the design requirements for a seamless memory connection between the NXP LPC2292 and LPC2294 family of microcontrollers and a Micron asynchronous PSRAM device.	TN-45-29	Jun 2007