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Phase Change Memory Solution for Mobile Devices

PCM + LPDDR2 MCP 

Phase change memory (PCM) is a groundbreaking class of memory that delivers an unparalleled combination of performance and efficiency for your design.

Learn more about phase change memory

A high-quality user experience is the critical differentiating factor in mobile phones. Our 45nm PCM-based multichip packages (MCPs) enable quicker boot time, longer battery life, and better reliability—features that will set your design apart.

While improving performance for end users, PCM-based MCPs can also simplify your memory subsystem design and reduce system-level costs. These MCPs combine PCM and LPDDR2 in a single package with a shared LPDDR2 interface; they simplify software development and are scalable for LTE modems.

“I commend Micron for being able to put silicon down and show volume production of PCM. This blows naysayers away ­– of which I was one – and shows that the technology can work. It also drives home the lesson that you must pay your dues in terms of development and production time – including the ability to work around a variety of issues like thermal disturb – to achieve a good, production-ready, innovative design.”

- Alan Niebel, CEO of Web-Feet Research

Our PCM-based MCPs are shipping in volume to Nokia for their Asha smartphone, and we are actively engaged in the validation process with several other key customers and enablers.

PCM Density Width LPDDR2 Density Voltage Package

1Gb

See 2 Products
x16 512Mb 1.8V WFBGA

512Mb

See 1 Products
x16 512Mb 1.8V WFBGA
  • Random read performance up to 400 MB/s
  • Bit alterability —no erase required
  • Code execution without host ECC
  • Endurance > 100,000 write cycles
  • Improved data retention through floating-gate technology – write cycles do not degrade data
  • Lower power consumption
     
  • Design optimization:

    • JEDEC-standard specification
    • Platform-validated for Intel Mobile, TI OMAP PandaBoard, and Android OS
    • Paired with LPDDR2 in a single multichip or package-on-package (PoP) with a shared LPDDR2 interface
    • Smaller PCB with low pin-count package
    • BoM simplification
    • No specification changes extends design life and reduces costs
     

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PCM + LPDDR2 MCP

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Unleash Your Groundbreaking Designs

Unleash Your Groundbreaking Designs

Our revolutionary PCM blends the best attributes of NOR, NAND, and RAM to provide unprecedented capabilities in a single, nonvolatile memory chip.

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For PCM-Based MCP (2)
Title & Description Secure ID# Updated Type
Unleash Your Groundbreaking Designs: Micron Phase Change Memory (PCM): (PDF 223.71 KB)Memory architecture can be a challenge—density, performance, packaging, and interfaces all affect system-level performance. Our revolutionary phase change memory (PCM) blends the best attributes of NOR, NAND, and RAM, offering unprecedented capability in a single, nonvolatile memory chip that allows you to consolidate multiple memory types within an application. 10/2012 Product Flyer
MCP Product Flyer: (PDF 251.77 KB)An overview of how Micron's MCPs deliver the right combination of form factor, speed, and power. 08/2012 Product Flyer
For Multichip Packages (14)
Title & Description Secure ID# Updated Type
MCP/PoP Part Numbering System: (PDF 28.48 KB)Part numbering guide for Micron MCP/PoP products. 02/2013 Part Numbering Guide
Recommended Soldering Parameters: (PDF 173.37 KB)Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products. TN-00-15 12/2012 Technical Note
NOR MCP Part Numbering System: (PDF 59.36 KB)Part numbering guide for Micron NOR MCP products. 09/2012 Part Numbering Guide
Micron e-MMC Embedded Memory – Mobile Applications: (PDF 275.45 KB)Micron's e·MMC embedded memory, which combines our high-quality,low-cost NAND Flash memory with a high-speed MultiMediaCard (MMC) controller in a low-profile BGA package, is an ideal mass storage solution for mobile applications. 08/2012 Product Flyer
PCM-LPDDR I/F MCP Part Numbering System: (PDF 36.46 KB)Part numbering guide for Micron PCM-LPDDR I/F MCP products. 08/2012 Part Numbering Guide
TN-10-21: Qualcomm QSC6695 Register Settings: (PDF 482.14 KB)Rev. 1.0 TN-10-21 12/2011 Technical Note
TN-10-21: Qualcomm QSC6695 Validation Report: (PDF 336.51 KB)Rev. 1.0 TN-10-21 12/2011 Technical Note
PoP User Guide: (PDF 846.18 KB)Provides several well-established guidelines for package-on-package (PoP) semiconductor package design and assembly, which requires unique considerations in both the up-front design and the manufacturing process. CSN-34 08/2011 Customer Service Note
Bypass Capacitor Selection for High-Speed Designs: (PDF 481.9 KB)Describes bypass capacitor selection for high-speed designs. TN-00-06 03/2011 Technical Note
Micron Wire-Bonding Techniques: (PDF 66.13 KB)This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products. TN-00-22 11/2010 Technical Note
Uprating of Semiconductors for High-Temperature Applications: (PDF 428.33 KB)Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications TN-00-18 05/2010 Technical Note
Accelerate Design Cycles with Simulation Models: (PDF 206.91 KB)Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design. TN-00-09 02/2010 Technical Note
Understanding Signal Integrity: (PDF 1.52 MB)Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life TN-00-20 12/2009 Technical Note
IBIS Behavioral Models: (PDF 163.98 KB)Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site. TN-00-07 11/2009 Technical Note
For Products and Support (15)
Title & Description Secure ID# Updated Type
Shipping Quantities: (PDF 1.31 MB)Provides tables of part quantity. CSN-04 05/2013 Customer Service Note
Thermal Applications: (PDF 253.94 KB)Describes some considerations in thermal applications for Micron memory devices TN-00-08 04/2013 Technical Note
Product Marks/Product and Packaging Labels: (PDF 817.69 KB)Explains product part marking, and product and packaging labels. CSN-11 03/2013 Customer Service Note
Moisture Absorption in Plastic Packages: (PDF 97.08 KB)Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture TN-00-01 02/2013 Technical Note
Micron Component and Module Packaging: (PDF 1.41 MB)Explanation of Micron packaging labels and procedures. CSN-16 01/2013 Customer Service Note
Micron BGA Manufacturer's User Guide: (PDF 388.76 KB)Provides information to enable customers to easily integrate both leading-edge and legacy Micron's ball grid array (BGA) packages into their manufacturing processes. It is intended as a set of high-level guidelines and a reference manual describing typical package-related and manufacturing process-flow practices. CSN-33 12/2012 Customer Service Note
Electronic Data Interchange: (PDF 52.45 KB)Describes EDI transmission sets, protocol, and contacts. CSN-06 11/2012 Customer Service Note
Wafer Packaging and Packaging Materials: (PDF 591.29 KB)Provides complete shipping and recycling information about each of the materials used for shipping Micron's products. CSN-20 10/2012 Customer Service Note
PCN/EOL Systems: (PDF 79.21 KB)Explains Micron's product change notification and end-of-life systems. CSN-12 04/2012 Customer Service Note
Lead Frame Package User Guidelines: (PDF 245.66 KB)Discusses Micron's lead-frame package options CSN-30 05/2011 Customer Service Note
RMA Procedures for Packaged Product and Bare Die Devices: (PDF 82.64 KB)Outlines standard returned material authorization (RMA) procedures, as well as the differences associated with bare die RMAs. CSN-07 10/2010 Customer Service Note
ESD Precautions for Die/Wafer Handling and Assembly: (PDF 119.08 KB)Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs. CSN-24 08/2010 Customer Service Note
Micron KGD Definitions: (PDF 65.52 KB)Describes the testing specifications and parameters for Micron's KGD-C1 and KGD-C2 DRAM die. CSN-22 07/2009 Customer Service Note
Bare Die SiPs and MCMs: (PDF 151.06 KB)Describes design considerations for bare die SiPs and MCMs. CSN-18 04/2009 Customer Service Note
ISO System Management Standards: (PDF 39.18 KB)Describes ISO system management standards. CSN-08 04/2004 Customer Service Note

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Multichip Packages FAQs (5)

Does thermal information change for IT parts?
Thermal information includes temperature limits and thermal impedance values. Temperature limits do change for IT parts (TC, TJ, and TA), but thermal impedance values (θJA, θJB, and θJC) do not because thermal impedance depends primarily on the package.
My design was based on a specification stating the JTAG was relative to VDD (1.8V), but now we’ve discovered that JTAG is actually relative to VDDQ (1.5V). It’s a fairly significant board spin to change this; what do I risk by leaving the design as-is? I assume that the specification is still for VDDQ + 0.3V = 1.8V, but with CMOS parts there’s no way I can guarantee that it won’t swing past that on transitions.
Your particular board design should not be a cause of major concern. The pins can handle the VDD voltage regardless of the VDDQ voltage.
Should the ECC memory chip share chip select and CKE signals with the other two main memory chips in our point-to-point application?
The ECC chip(s) should share the same CKE and CS# as the other devices because they are accessed as the same piece of data.
What is a "bank"?
A bank is an array of memory bits. Multiple arrays or banks are contained within a DRAM component. Depending on density, DRAM components may consist of 4 or 8 banks. For example, a bank may consist of 32 million rows, 4 bits across. This would equate to 128 megabits. Four of these banks in a single DRAM component would yield a 512Mb component.
What is the impedance tolerance of the driver in match-impedance mode relative to the expected value base on the perfect reference resistor connected to ZQ pin?
The impedance tolerance of the driver is ±15 percent.

Products and Support FAQs (1)

Who do I contact if I have questions about my buymicron.com order?
If you have any questions about your order, contact buymicron.com.

PCM-based MCPs take cell phone performance to the next level

July 27, 2012 by Brian Bradford

Phase change memory (PCM) in the mobile handset market is a game-changer because of its performance, software simplification, and reliability. Cell phones today have enabled NAND-based MCP solutions for read operations and random access capabilities; however, Micron’s PCM-based MCP solution will enable cell phone users to enjoy new experiences. “Instant-on” is becoming a reality thanks to the performance of Micron’s PCM and low-power double data rate mobile DRAM...Read More

See all posts on MCP, PCM, LPDRAM, Performance, Mobile

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