Micron RLDRAM Products

Micron® RLDRAM® II memory is a high-performance architecture for L3 cache and networking applications, high-end commercial graphics, and any other system that requires high, sustainable bandwidth in back-to-back READ/WRITE operations. The key to RLDRAM II device performance is its innovative circuit design, which minimizes the time between the beginning of the access cycle and the availability of the first data. Our offering includes multiple configurations to provide system design flexibility. With high density (576Mb), high bandwidth (3.6 GB/s and 4.8 GB/s), and performance competitive with QDR SRAM at a fraction of the cost, RLDRAM memory is the ideal solution for networking and communication applications that demand ultra-quick response times and fast random access.

RLDRAM Part Catalog and Documentation

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RLDRAM

Networking Innovations

Juniper Networks partners with Micron for the kind of sustained bandwidth that gives other memory performance envy. Find out more.

Micron's Preferred RLDRAM Distributor

Micron is pleased to announce our new preferred RLDRAM memory distributor, Phoenics Electronics. Phoenics focuses on the networking, enterprise, storage, industrial, wireless, security, and high-end computing market segments—and works closely with Micron’s ecosystem RLDRAM partners. Together we can meet your needs for technical expertise and ease of purchasing.

Transitioning your System from FCRAM® to RLDRAM® Memory

Minimized latency and reduced row cycle times make RLDRAM memory an ideal replacement for FCRAM designs. In this RLDRAM memory presentation, Micron senior applications engineer Todd Dinkelman presents an overview of FCRAM, RLDRAM, and RLDRAM II memory features, highlighting differences that designers must be aware of when shifting their designs from FCRAM. Watch the "Transitioning to RLDRAM Memory" presentation or download a PDF of the slides.

Exploring the RLDRAM II Feature Set

With network line rates steadily increasing, memory density and performance are becoming extremely important in enabling quick and efficient network packet processing. RLDRAM II addresses these higher-performance requirements by providing the critical features networking and cache applications need.

Find out more in technical note TN-49-02: Exploring the RLDRAM II Feature Set.

RLDRAM Features and Benefits

	Features	Benefits
Densities	288Mb, 576Mb	Available in two densities, providing flexibility for many designs.
Configuration	x9, x18, x36	Available in wider bus widths with minimal part counts in wide-bus configured systems; common or separate I/O.
Supply Voltages	1.8V core	HSTL and SSTL I/O compatibility.
Clock Frequencies	200 MHz-533 MHz	Achieves 400-1,067 Mb/s per pin.
Temperature Ranges	0°C to +95°C	Increased operating range for optimum functionality in extreme environments.
Special Features	Latency	Low latencies 15nS-20nS.
	Bandwidth	Up to 38.4 Gb/s peak bandwidth; multiplexed and non-multiplexed address modes; on-chip DLL; JTAG boundary scan; intelligent on-die termination.