Micron Mobile DRAM Technotes

Title and Description	ID Number	Last Update
TN-00-01: Moisture Absorption in Plastic Packages - Describes the shipping procedures that ensure Micron’s customers receive memory devices that do not exhibit the popcorn effect	TN-00-01	Mar 2007
TN-00-06: Bypass Capacitor Selection for High-Speed Designs	TN-00-06	Sep 1999
TN-00-07: IBIS Behavioral Models	TN-00-07	Sep 1999
TN-00-08: Thermal Applications - Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature.	TN-00-08	Feb 2007
TN-00-09: Accelerate Design Cycles With Micron Simulation Models	TN-00-09	Oct 2006
TN-00-14: Understanding the Quality and Reliability Requirements for Bare Die Applications	TN-00-14	Sep 2001
TN-00-15: Recommended Soldering Parameters	TN-00-15	Mar 2007
TN-00-17: Timing Specification Derating for High Capacitance Output Loading - Describes how to create capacitance derating data for Micron products that can then be used in preliminary evaluations of system timing	TN-00-17	May 2004
TN-00-18: Uprating of Semiconductors for High-Temperature Applications - Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer’s environmental specifications	TN-00-18	Feb 2007
TN-00-19: Thinning Considerations for Wafer Products - Information on optimal wafer-thinning processes to meet specific customer requirements	TN-00-19	Nov 2004
TN-00-20: The Value of Signal Integrity - Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life	TN-00-20	Jun 2005
TN-46-12: Mobile DRAM Power-Saving Features and Power Calculations - Addresses the power-saving features and power calculations of low-power Mobile DRAM memory	TN-46-12	Oct 2005
TN-46-15: Low-Power Versus Standard DDR SDRAM - An overview of the functional and mechanical differences between low-power and standard DDR and a description of exclusive features of low-power DDR.	TN-46-15	Jan 2007
TN-46-16: 512Mb Mobile DDR: 95nm to 78nm Product Transition Guide - Discusses transition from 95nm to 78nm product technology	TN-46-16	Sep 2007
TN-48-01: Examples of READ-MODIFY-WRITE Cycles With Synchronous DRAMs	TN-48-01	Feb 1999
TN-48-05: SDRAM WRITE to ACTIVE Command Timing	TN-48-05	Nov 2000
TN-48-06: Increasing Battery Life in Laptops	TN-48-06	Feb 2000
TN-48-08: Designing in SDRAM for Future Upgrades	TN-48-08	Mar 2004
TN-48-09: LVTTL Derating for SDRAM Slew Rate Violations	TN-48-09	Oct 2000
TN-48-10: Mobile SDRAM's Power-Saving Features	TN-48-10	Jun 2002

Micron

Mobile DRAM Technical Notes

Mobile DRAM