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Memory for Automotive

Memory for Automotive

Technology is reshaping the concept of driving. Automakers are developing countless new driver-assistance features and systems. See how Micron’s memory solutions are helping to enable these new supercomputing capabilities.

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Memory for Automotive

Memory for Automotive

Technology is reshaping the concept of driving. Automakers are developing countless new driver-assistance features and systems. See how Micron’s memory solutions are helping to enable these new supercomputing capabilities.

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Optimizing Performance in Low-Power Applications

Consumers want more features and functionality from their ultrathin computing devices and mobile phones, and you're expected to design it in with less power, less time, and less space. We understand those design challenges and offer a wide range of mobile low-power DRAM parts to address them. Our low-power DRAM (LPDRAM) has the low power consumption, high performance, choice of densities, and wide temperature ranges to help you get the most out of your design.

  • Available in multiple densities, providing flexibility for many designs
  • Enables the use of fewer components to support wide-bus architectures
  • Low voltage helps reduce power consumption—a key advantage over standard DRAM
  • Provides performance comparable to SDR and DDR SDRAM, with the added advantage of power savings
  • Delivers low power dissipation in standby and active modes, plus special mobile features to reduce power consumption for a more efficient design
  • TCSR: Adjusts refresh timing to minimize power consumption at lower, ambient temperatures
  • Increased operating range for optimum functionality in extreme environments

Featured Article

System Power Calculators

System Power Calculators

Whether it's calculating battery life for a portable application, planning cooling for a desktop, or determining the power supply for a server, an accurate power budget for the memory is essential.

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PCM-Based MCP

PCM for Mobile

Differentiate your designs—Intel-validated PCM + LPDDR2 MCPs available NOW for mobile applications
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For Mobile LPDRAM (11)
Title & Description Secure ID# Updated Type
TN-42-01: LPDDR2 System Power Calculator: (XLSM 137.55 KB)Provides formulas for calculating LPDDR2 system power requirements. Rev. 0.6 TN-42-01 05/2013 Power Calculator
Mobile LPDRAM Product Flyer: (PDF 101.35 KB)Discusses six key advantages of designing with Micron’s mobile LPDRAM. 03/2013 Product Flyer
Industrial and Multi-Market Applications Flyer: (PDF 454.13 KB)Our extensive and stable portfolio of IMM-focused memory solutions empower technology developments in automotive, industrial, medical, manufacturing, and other multimarket segments. 02/2013 Product Flyer
Why DRAM for Ultrathins: (PDF 64.92 KB)Micron’s DRAM portfolio is the industry’s broadest and includes every type and form factor used in today’s ultrathin and Ultrabook designs. 02/2013 Product Flyer
Backward Compatibility for Faster LPDDR SDRAM: (PDF 105.69 KB)This technical note reviews the timing differences between the faster and slower LPDDR SDRAM speeds and explains how faster parts function compatibly with slower parts. TN-46-23 02/2013 Technical Note
TN-46-22: T69M (50nm) to T79M (4xnm) Transition Guide: (PDF 147.18 KB)Transition guide for migration from T69M to T79M TN-46-22 06/2011 Technical Note
Thinning Considerations for Wafer Products: (PDF 73.58 KB)Information on optimal wafer-thinning processes to meet specific customer requirements TN-00-19 10/2009 Technical Note
TN-42-01: Calculating Memory System Power for LPDDR2: (PDF 1.3 MB)Describes how to calculate memory system power requirements for LPDDR2 TN-42-01 06/2009 Technical Note
Power-Saving Features of Mobile LPDRAM: (PDF 255.93 KB)Addresses the power-saving features and power calculations of low-power Mobile LPDRAM memory TN-46-12 05/2009 Technical Note
Mobile LPDRAM Unterminated Point-to-Point System Design: Layout and Routing Tips: (PDF 552.55 KB)Provides guidance for the development of multilayer board designs TN-46-19 11/2008 Technical Note
Mobile LPDDR Versus Standard DDR SDRAM: (PDF 432.44 KB)An overview of the functional and mechanical differences between low-power and standard DDR and a description of exclusive features of LPDDR TN-46-15 12/2007 Technical Note
For DRAM (12)
Title & Description Secure ID# Updated Type
DRAM Component Part Numbering System: (PDF 37.35 KB)Part numbering guide for DDR4/DDR3/DDR2/DDR/SDR SDRAM, Mobile LPDRAM, and RLDRAM components 04/2013 Part Numbering Guide
Recommended Soldering Parameters: (PDF 173.37 KB)Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products. TN-00-15 12/2012 Technical Note
Bypass Capacitor Selection for High-Speed Designs: (PDF 481.9 KB)Describes bypass capacitor selection for high-speed designs. TN-00-06 03/2011 Technical Note
Micron Wire-Bonding Techniques: (PDF 66.13 KB)This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products. TN-00-22 11/2010 Technical Note
Uprating of Semiconductors for High-Temperature Applications: (PDF 428.33 KB)Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications TN-00-18 05/2010 Technical Note
Accelerate Design Cycles with Simulation Models: (PDF 206.91 KB)Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design. TN-00-09 02/2010 Technical Note
The Future of Memory and Storage: (PDF 1.54 MB)Overview of trends for main memory and Flash memory 12/2009 Presentation
Understanding Signal Integrity: (PDF 1.52 MB)Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life TN-00-20 12/2009 Technical Note
IBIS Behavioral Models: (PDF 163.98 KB)Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site. TN-00-07 11/2009 Technical Note
Understanding Quality and Reliability Requirements for Bare Die Applications: (PDF 142.04 KB)Describes the quality and reliability requirements for bare die applications TN-00-14 10/2009 Technical Note
SEMI Wafer Map Format: (PDF 110 KB)Micron has adopted the wafer map file format approved by Semiconductor Equipment and Materials International (SEMI). With SEMI formatting, Micron's customers can be confident they will always receive consistent, compatible, reliable map files. TN-00-21 02/2009 Technical Note
FBGA Date Codes: (PDF 22.36 KB)Date codes for FBGA-packaged components 08/2005 Part Numbering Guide
For Products and Support (14)
Title & Description Secure ID# Updated Type
Product Marks/Product and Packaging Labels: (PDF 1.15 MB)Explains product part marking, and product and packaging labels. CSN-11 05/2013 Customer Service Note
Shipping Quantities: (PDF 1.31 MB)Provides tables of part quantity. CSN-04 05/2013 Customer Service Note
Thermal Applications: (PDF 253.94 KB)Describes some considerations in thermal applications for Micron memory devices TN-00-08 04/2013 Technical Note
Moisture Absorption in Plastic Packages: (PDF 97.08 KB)Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture TN-00-01 02/2013 Technical Note
Micron Component and Module Packaging: (PDF 1.41 MB)Explanation of Micron packaging labels and procedures. CSN-16 01/2013 Customer Service Note
Micron BGA Manufacturer's User Guide: (PDF 388.76 KB)Provides information to enable customers to easily integrate both leading-edge and legacy Micron's ball grid array (BGA) packages into their manufacturing processes. It is intended as a set of high-level guidelines and a reference manual describing typical package-related and manufacturing process-flow practices. CSN-33 12/2012 Customer Service Note
Electronic Data Interchange: (PDF 52.45 KB)Describes EDI transmission sets, protocol, and contacts. CSN-06 11/2012 Customer Service Note
Wafer Packaging and Packaging Materials: (PDF 591.29 KB)Provides complete shipping and recycling information about each of the materials used for shipping Micron's products. CSN-20 10/2012 Customer Service Note
PCN/EOL Systems: (PDF 79.21 KB)Explains Micron's product change notification and end-of-life systems. CSN-12 04/2012 Customer Service Note
Lead Frame Package User Guidelines: (PDF 245.66 KB)Discusses Micron's lead-frame package options CSN-30 05/2011 Customer Service Note
RMA Procedures for Packaged Product and Bare Die Devices: (PDF 82.64 KB)Outlines standard returned material authorization (RMA) procedures, as well as the differences associated with bare die RMAs. CSN-07 10/2010 Customer Service Note
ESD Precautions for Die/Wafer Handling and Assembly: (PDF 119.08 KB)Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs. CSN-24 08/2010 Customer Service Note
Micron KGD Definitions: (PDF 65.52 KB)Describes the testing specifications and parameters for Micron's KGD-C1 and KGD-C2 DRAM die. CSN-22 07/2009 Customer Service Note
Bare Die SiPs and MCMs: (PDF 151.06 KB)Describes design considerations for bare die SiPs and MCMs. CSN-18 04/2009 Customer Service Note

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Mobile LPDRAM FAQs (12)

Are Micron's Mobile LPDRAM products green/RoHS compliant?
Yes. Micron’s green engineering program is RoHS-compliant and conforms with most of the world’s emerging environmental standards, including those in Asia and Europe.
Are your Mobile LPDRAM parts JEDEC-compliant?
We design our parts to meet or exceed the JEDEC specification. As standards change, we will make the necessary changes to ensure our parts meet new specifications. Any changes made will be noted in a product change notice (PCN) and sent to our customers.
Do you recommend a x8, x16, or x32 configuration for mobile applications?
Mobile LPDRAM is offered in x16, x32, and x64. To make the best Mobile LPDRAM choice, consider the application, bandwidth/throughput, physical space on the PCB, and power consumption.
Does Micron's Mobile LPDRAM cost more than standard DRAM?
It depends. Density plays a major role in price comparisons between Mobile LPDRAM and standard SDR/DDR. Also, since Mobile LPDRAM is offered in standard configurations of x16, x32 and x64, you may be able to reduce your overall BOM cost if your application currently uses two x16 components to support a x32 bus. You could use one x32 Mobile LPDRAM instead of two x16 standard DRAM. Contact your local rep for cost information.
Is Mobile LPDRAM a growing market?
Absolutely. iSuppli estimates that the market for Mobile LPDRAM is growing rapidly, with a CAGR of 21.2% from 2006 to 2011. We’re continuing to develop advanced Mobile LPDRAM solutions to meet this growing market.
The part I was using is obsolete and the replacement is a faster speed grade. Can I run the Mobile LPDRAM parts at a lower speed?
Yes. A Mobile LPDRAM part can be run at any speed equal to or slower than its rated speed grade.
What is Mobile LPDRAM?
Optimized for products where power consumption is a concern, our low-power Mobile LPDRAM devices combine leading-edge technologies and packaging options to meet space requirements and extend battery life. Mobile LPDRAM is available with DDR/SDR interface.
What is the life expectancy of Micron's Mobile LPDRAM products?
We're excited about this fast-growing market. We plan to manufacture Mobile LPDRAM for many years to come and plan to continue to shrink our designs to achieve higher densities.
What makes Micron's Mobile LPDRAM unique?
We offer a comprehensive Mobile LPDRAM product portfolio, with a wide range of densities and package options (including JEDEC-standard VFBGA, Known Good Die, and package-on-package). With nearly a decade of Mobile LPDRAM experience, our worldwide technical support team can provide the expertise and assistance you need to get your designs to market faster.
What Mobile LPDRAM parts have been validated on the OMAP35x?
Micron works closely with Texas Instruments (TI) to validate and optimize our parts for the OMAP35x processors. As we work with the OMAP35x team, the list of validated memory devices expands frequently. For the most current information, contact your local Micron support, or contact Micron Product Sales Support.
What’s the difference between Mobile DRAM and Mobile LPDRAM?
There is no difference; Mobile DRAM and Mobile LPDRAM are the same product. We opted to add the "LP" prefix to our Mobile DRAM product line to align with the common terminology used throughout the industry and to ensure our customers know at a glance that our Mobile DRAM is a low-power memory device. In addition to the family name change, Mobile DDR SDRAM and Mobile SDR SDRAM are now called Mobile LPDDR and Mobile LPSDR, respectively. Our Web site has been wholly converted to the Mobile LPDRAM naming convention, but because we’re updating our PDFs as they come up for review you may see a few older technical documents that still use the old Mobile DRAM terminology.
Where are Micron's Mobile LPDRAM products used today?
Our Mobile LPDRAM products are used in a wide variety of applications. The most popular are consumer electronic devices like digital still cameras and MP3 players, as well as mobile phones and PDAs. Automotive, medical, and military companies, which are very stringent on quality and reliability, use Mobile LPDRAM to take advantage of the wide industrial temperature range of –40°C to +105°C, which other memory vendors don’t support. It’s also designed in to a variety of networking applications.

DRAM FAQs (8)

Can CKE be tied HIGH throughout SDRAM operation (initialization and normal operation)?
JEDEC does not specify the exact state of CKE during initialization; it is supplier specific. Micron strongly recommends CKE be kept at an LVTTL logic LOW before applying a stable CLK signal. During normal operation, CKE can be tied HIGH. The initial LOW state of CKE prevents parts from receiving an illegal LMR command, which could put the part into an unknown or unexpected state.
Can the SDRAM clock frequency be changed?
Micron SDRAM data sheets require that the clock frequency be constant during access or precharge states (READ, WRITE, tWR, and PRECHARGE commands). At other times frequency should not matter much because there is no DLL in SDRAM however, we do not recommend it. Lowering SDRAM frequency is OK even if you are not doing an LMR and CAS latency change. In case of increasing frequency, ensure tCK and CAS latency specifications are met. In either case, all other data sheet timing specifications should be adhered to.
Is there a recommended lowest working frequency for SDRAM?
Because SDRAM does not have a DLL, there is no recommended lowest frequency. SDRAM parts will work at very low frequencies if all data sheet specifications are met. It is important to maintain a good slew rate, however, since a very slow slew rate will affect setup and hold-time transitions. Also, for operating frequencies of 45 MHz, tCKS = 3.0ns. For more information, see TN-48-09.
Does thermal information change for IT parts?
Thermal information includes temperature limits and thermal impedance values. Temperature limits do change for IT parts (TC, TJ, and TA), but thermal impedance values (θJA, θJB, and θJC) do not because thermal impedance depends primarily on the package.
My design was based on a specification stating the JTAG was relative to VDD (1.8V), but now we’ve discovered that JTAG is actually relative to VDDQ (1.5V). It’s a fairly significant board spin to change this; what do I risk by leaving the design as-is? I assume that the specification is still for VDDQ + 0.3V = 1.8V, but with CMOS parts there’s no way I can guarantee that it won’t swing past that on transitions.
Your particular board design should not be a cause of major concern. The pins can handle the VDD voltage regardless of the VDDQ voltage.
Should the ECC memory chip share chip select and CKE signals with the other two main memory chips in our point-to-point application?
The ECC chip(s) should share the same CKE and CS# as the other devices because they are accessed as the same piece of data.
What is a "bank"?
A bank is an array of memory bits. Multiple arrays or banks are contained within a DRAM component. Depending on density, DRAM components may consist of 4 or 8 banks. For example, a bank may consist of 32 million rows, 4 bits across. This would equate to 128 megabits. Four of these banks in a single DRAM component would yield a 512Mb component.
What is the impedance tolerance of the driver in match-impedance mode relative to the expected value base on the perfect reference resistor connected to ZQ pin?
The impedance tolerance of the driver is ±15 percent.

Products and Support FAQs (1)

Who do I contact if I have questions about my buymicron.com order?
If you have any questions about your order, contact buymicron.com.

PCM-based MCPs take cell phone performance to the next level

July 27, 2012 by Brian Bradford

Phase change memory (PCM) in the mobile handset market is a game-changer because of its performance, software simplification, and reliability. Cell phones today have enabled NAND-based MCP solutions for read operations and random access capabilities; however, Micron’s PCM-based MCP solution will enable cell phone users to enjoy new experiences. “Instant-on” is becoming a reality thanks to the performance of Micron’s PCM and low-power double data rate mobile DRAM...Read More

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