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Your Innovation, Our Memory

Your Innovation, Our Memory

Emerging technologies require innovation on a whole new scale. See how we partner closely with our customers to gain unique insights about how we can optimize our memory solutions to enable your innovations—and help you change the world.

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Memory for Automotive

Memory for Automotive

Technology is reshaping the concept of driving. Automakers are developing countless new driver-assistance features and systems. See how Micron’s memory solutions are helping to enable these new supercomputing capabilities.

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About Micron

Where there's memory, there's Micron

Engineered for Innovation

For more than 30 years Micron has redefined innovation by designing, developing, and manufacturing some of the world’s most advanced technologies.

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Elpida is Now Micron

Elpida Is Now Micron

With the combined strength of our products, technology, and team members—our customers now have access to the broadest portfolio of best-in-class technology.

About the acquisition

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Create an account to access these benefits:

  • Save part pages
  • Save Data Sheets and other files
  • Create folders to organize your projects
  • Share folders with colleagues
  • Organize secure documents for easy access
  • "Follow" parts to see alerts and updates

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My Folders

Your workspace is your area to organize and save part pages, data sheets, and links for easy access in the future. You can even start by saving some of the pages you've recently accessed below:

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Ultra-High Bandwidth Enhances Visual Computing Experience

          

Elpida Parts Are Here

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our expanded part catalogs.

About Elpida Parts

GDDR5 combines unprecedented memory bandwidth with high system stability—making it the ideal DRAM platform for high-performance applications like 3D graphics cards, game consoles, video editing, and high-performance computing.

  • Ultra-high memory bandwidth
  • High performance
  • High-speed memory core
  • High system stability
  • No trace length matching
  • Error tolerance
  • Improved TCO through low PCB cost
  • Operates in x32 mode or x16 mode to enable a clamshell configuration
  • Enhanced design flexibility based on industry-standard FBGA package
DRAM vs. Graphics DRAM

Standard DRAM vs. Graphics DRAM

Differentiate the main features of DDR3, GDDR3, and GDDR5 with our comparison table.

Compare DRAM to Graphics DRAM

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For GDDR5 (2)
Title & Description Secure ID# Updated Type
GDDR5 for Networking Flyer : (PDF 454.11 KB) A look at the features and benefits that GDDR5 offers for networking applications. 11/2014 Product Flyer
GDDR5 SGRAM Introduction: (PDF 455.12 KB)This technical note describes the features and benefits of GDDR5 SGRAM. TN-ED-01 02/2014 Technical Note
For DRAM (15)
Title & Description Secure ID# Updated Type
HMC Part Numbering System: (PDF 59 KB)Part numbering guide for Hybrid Memory Cube 10/2014 Part Numbering Guide
DRAM Component Part Numbering System: (PDF 46.77 KB)Part numbering guide for DDR4/DDR3/DDR2/DDR/SDR SDRAM, Mobile LPDRAM, and RLDRAM components 10/2014 Part Numbering Guide
Legacy LPDRAM Part Numbering System: (PDF 114.47 KB)Part numbering guide for legacy LPDDR2 and LPDRR3 PoP and FBGA components 05/2014 Part Numbering Guide
SEMI Wafer Map Format: (PDF 114.26 KB)Micron has adopted the wafer map file format approved by Semiconductor Equipment and Materials International (SEMI). With SEMI formatting, Micron's customers can be confident they will always receive consistent, compatible, reliable map files. TN-00-21 03/2014 Technical Note
Routing Guidelines for Micron’s HMC-15G-SR: (PDF 3.3 MB)Provides sound methods, proven solutions, and detailed PCB layout guidelines to enable successful designs using Micron’s HMC. TN-43-03 HMC TN-43-03 06/2013 Technical Note
Recommended Soldering Parameters: (PDF 173.37 KB)Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products. TN-00-15 12/2012 Technical Note
Bypass Capacitor Selection for High-Speed Designs: (PDF 481.9 KB)Describes bypass capacitor selection for high-speed designs. TN-00-06 03/2011 Technical Note
Micron Wire-Bonding Techniques: (PDF 66.13 KB)This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products. TN-00-22 11/2010 Technical Note
Uprating of Semiconductors for High-Temperature Applications: (PDF 428.33 KB)Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications TN-00-18 05/2010 Technical Note
Accelerate Design Cycles with Simulation Models: (PDF 206.91 KB)Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design. TN-00-09 02/2010 Technical Note
Understanding Signal Integrity: (PDF 1.64 MB)Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life TN-00-20 12/2009 Technical Note
IBIS Behavioral Models: (PDF 163.98 KB)Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site. TN-00-07 11/2009 Technical Note
Understanding Quality and Reliability Requirements for Bare Die Applications: (PDF 142.04 KB)Describes the quality and reliability requirements for bare die applications TN-00-14 10/2009 Technical Note
FBGA Date Codes: (PDF 22.36 KB)Date codes for FBGA-packaged components 08/2005 Part Numbering Guide
FBGA Decoder: Micron's FBGA Part Marking Decoder makes it easier to understand part marking. Tool
For Products and Support (14)
Title & Description Secure ID# Updated Type
Micron Component and Module Packaging: (PDF 1.35 MB)Explanation of Micron packaging labels and procedures. CSN-16 11/2014 Customer Service Note
Product Marks/Product and Packaging Labels: (PDF 1.58 MB)Explains product part marking, and product and packaging labels. CSN-11 10/2014 Customer Service Note
Shipping Quantities: (PDF 1.22 MB)Provides standard part quantities for shipping. CSN-04 03/2014 Customer Service Note
RMA Procedures for Packaged Product and Bare Die Devices: (PDF 76.22 KB)Outlines standard returned material authorization (RMA) procedures, as well as the differences associated with bare die RMAs. CSN-07 01/2014 Customer Service Note
Wafer Packaging and Packaging Materials: (PDF 591.42 KB)Provides complete shipping and recycling information about each of the materials used for shipping Micron's products. CSN-20 11/2013 Customer Service Note
Thermal Applications: (PDF 246.79 KB)Describes some considerations in thermal applications for Micron memory devices TN-00-08 07/2013 Technical Note
Moisture Absorption in Plastic Packages: (PDF 97.08 KB)Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture TN-00-01 02/2013 Technical Note
Micron BGA Manufacturer's User Guide: (PDF 388.76 KB)Provides information to enable customers to easily integrate both leading-edge and legacy Micron's ball grid array (BGA) packages into their manufacturing processes. It is intended as a set of high-level guidelines and a reference manual describing typical package-related and manufacturing process-flow practices. CSN-33 12/2012 Customer Service Note
Electronic Data Interchange: (PDF 52.45 KB)Describes EDI transmission sets, protocol, and contacts. CSN-06 11/2012 Customer Service Note
PCN/EOL Systems: (PDF 79.21 KB)Explains Micron's product change notification and end-of-life systems. CSN-12 04/2012 Customer Service Note
Lead Frame Package User Guidelines: (PDF 245.66 KB)Discusses Micron's lead-frame package options CSN-30 05/2011 Customer Service Note
ESD Precautions for Die/Wafer Handling and Assembly: (PDF 120.81 KB)Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs. CSN-24 08/2010 Customer Service Note
Micron KGD Definitions: (PDF 65.52 KB)Describes the testing specifications and parameters for Micron's KGD-C1 and KGD-C2 DRAM die. CSN-22 07/2009 Customer Service Note
Bare Die SiPs and MCMs: (PDF 151.06 KB)Describes design considerations for bare die SiPs and MCMs. CSN-18 04/2009 Customer Service Note

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GDDR5 FAQs (3)

Does GDDR5 replace GDDR3?

GDDR5 is not a direct replacement to GDDR3 due to package size differences:

  • GDDR3: BGA-136
  • GDDR5: BGA-170
How does Graphics DRAM differ from regular DRAM?

Graphics DRAM is a category of DDR SDRAM chips made to specifically handle the enormous demands of graphics processing. Unlike standard DRAM, graphics DRAM is a fixed and dedicated memory, generally combined with the Graphic Processing Unit (GPU) - either on the graphics card or on the system board (for systems with on-board graphics). Graphics DRAM also helps shift the display and graphics related load on the computer’s main memory as well as improve the performance of the GPU and the system’s display.

What features and functions does GDDR5 have versus previous generations of Graphics DRAM?
  • GDDR5 provides more than twice the memory bandwidth compared to its predecessor, GDDR3.
  • Higher densities
  • Lower external voltage
  • The specialty of GDDR5 is the 4X relationship between data rate and the CK clock, compared to the 2X relationship in DDR3 and GDDR3.

DRAM FAQs (8)

What is a "bank"?
A bank is an array of memory bits. Multiple arrays or banks are contained within a DRAM component. Depending on density, DRAM components may consist of 4 or 8 banks. For example, a bank may consist of 32 million rows, 4 bits across. This would equate to 128 megabits. Four of these banks in a single DRAM component would yield a 512Mb component.
What is the impedance tolerance of the driver in match-impedance mode relative to the expected value base on the perfect reference resistor connected to ZQ pin?
The impedance tolerance of the driver is ±15 percent.
Does thermal information change for IT parts?
Thermal information includes temperature limits and thermal impedance values. Temperature limits do change for IT parts (TC, TJ, and TA), but thermal impedance values (θJA, θJB, and θJC) do not because thermal impedance depends primarily on the package.
My design was based on a specification stating the JTAG was relative to VDD (1.8V), but now we’ve discovered that JTAG is actually relative to VDDQ (1.5V). It’s a fairly significant board spin to change this; what do I risk by leaving the design as-is? I assume that the specification is still for VDDQ + 0.3V = 1.8V, but with CMOS parts there’s no way I can guarantee that it won’t swing past that on transitions.
Your particular board design should not be a cause of major concern. The pins can handle the VDD voltage regardless of the VDDQ voltage.
Should the ECC memory chip share chip select and CKE signals with the other two main memory chips in our point-to-point application?
The ECC chip(s) should share the same CKE and CS# as the other devices because they are accessed as the same piece of data.
Is there a recommended lowest working frequency for SDRAM?
Because SDRAM does not have a DLL, there is no recommended lowest frequency. SDRAM parts will work at very low frequencies if all data sheet specifications are met. It is important to maintain a good slew rate, however, since a very slow slew rate will affect setup and hold-time transitions. Also, for operating frequencies of 45 MHz, tCKS = 3.0ns. For more information, see TN-48-09.
Can the SDRAM clock frequency be changed?
Micron SDRAM data sheets require that the clock frequency be constant during access or precharge states (READ, WRITE, tWR, and PRECHARGE commands). At other times frequency should not matter much because there is no DLL in SDRAM however, we do not recommend it. Lowering SDRAM frequency is OK even if you are not doing an LMR and CAS latency change. In case of increasing frequency, ensure tCK and CAS latency specifications are met. In either case, all other data sheet timing specifications should be adhered to.
Can CKE be tied HIGH throughout SDRAM operation (initialization and normal operation)?
JEDEC does not specify the exact state of CKE during initialization; it is supplier specific. Micron strongly recommends CKE be kept at an LVTTL logic LOW before applying a stable CLK signal. During normal operation, CKE can be tied HIGH. The initial LOW state of CKE prevents parts from receiving an illegal LMR command, which could put the part into an unknown or unexpected state.

Products and Support FAQs (1)

Who do I contact if I have questions about my buymicron.com order?
If you have any questions about your order, contact buymicron.com.

Gaming Goes Mobile—with Micron Memory Onboard

December 27, 2012 by Bill Randolph

With the proliferation of mobile devices, gaming has broken its tether to the living room and is now enjoyed everywhere. In fact, according to the latest study from the NPD market research group, 59% of total game play is done on a mobile device. Market research firm Mintel found that 38% of tablet gamers and 20% of mobile phone gamers are playing five or more hours per week. Gaming is clearly a trend that is here to stay.  Additionally, gaming graphics continue to become more detailed, li...Read More

See all posts on Graphics, Mobile, Performance

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Speed Industrial Designs to Market Via Avnet SOC Board With Micron e·MMC

September 23, 2014 by Bryan Fletcher

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VSAN Demo 2014: A How-To Guide

September 17, 2014 by Jared Hulbert

Now that the team is back from VMWorld, we wanted to share the configuration for our VSAN demo that drew so much attention. This blog is intended to give you the high-level view of how we created the ...Read More