Micron Memory Products-DDR DRAM-Technotes

Title and Description	ID Number	Last Update
TN-00-01: Moisture Absorption in Plastic Packages - Describes the shipping procedures that ensure Micron’s customers receive memory devices that do not exhibit the popcorn effect	TN-00-01	Mar 2007
TN-00-06: Bypass Capacitor Selection for High-Speed Designs	TN-00-06	Sep 1999
TN-00-07: IBIS Behavioral Models	TN-00-07	Sep 1999
TN-00-08: Thermal Applications - Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature.	TN-00-08	Feb 2007
TN-00-09: Accelerate Design Cycles With Micron Simulation Models	TN-00-09	Oct 2006
TN-00-14: Understanding the Quality and Reliability Requirements for Bare Die Applications	TN-00-14	Sep 2001
TN-00-15: Recommended Soldering Parameters	TN-00-15	Mar 2007
TN-00-17: Timing Specification Derating for High Capacitance Output Loading - Describes how to create capacitance derating data for Micron products that can then be used in preliminary evaluations of system timing	TN-00-17	May 2004
TN-00-18: Uprating of Semiconductors for High-Temperature Applications - Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer’s environmental specifications	TN-00-18	Feb 2007
TN-00-19: Thinning Considerations for Wafer Products - Information on optimal wafer-thinning processes to meet specific customer requirements	TN-00-19	Nov 2004
TN-00-20: The Value of Signal Integrity - Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life	TN-00-20	Jun 2005
TN-46-02: Decoupling Capacitor Calculation for a DDR Memory Channel	TN-46-02	Jul 2004
TN-46-03: Calculating DDR Memory System Power	TN-46-03	Mar 2005
TN-46-04: Synchronous Timing for DDR SDRAM	TN-46-04	May 2001
TN-46-05: General DDR SDRAM Functionality	TN-46-05	Jul 2001
TN-46-06: Termination for Point-to-Point Systems	TN-46-06	Sep 2001
TN-46-08: Initialization Sequence for DDR SDRAM	TN-46-08	Oct 2005
TN-46-09: Designing for 1Gb DDR SDRAM	TN-46-09	Dec 2003
TN-46-11: DDR SDRAM Point-to-Point Simulation Process - Covers rarely addressed areas of the DDR SDRAM point-to-point simulation process	TN-46-11	Jul 2005
TN-46-13: Backward Compatibility for Faster DDR SDRAM - Reviews DDR SDRAM device speed timing differences and shows the compatibility of Micron’s faster speed grade parts with its slower ones	TN-46-13	Aug 2005
TN-46-14: Hardware Tips for Point-to-Point System Design - Proven techniques for termination, layout, and routing.	TN-46-14	May 2006
TN-46-15: Low-Power Versus Standard DDR SDRAM - An overview of the functional and mechanical differences between low-power and standard DDR and a description of exclusive features of low-power DDR.	TN-46-15	Jan 2007
TN-48-16: Product Replacement for x32 EOL SDRAMs - Outlines recommendations for replacing or transitioning away from high density, x32 components that are nearing end of production.	TN-48-16	Jul 2006

Micron

DDR SDRAM Technical Notes

DDR SDRAM