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Micron Products

DRAM

Accelerate your time-to-market with quality DRAM components—rigorously tested for a wide range of applications—from the extreme temperature and performance needs of industrial and automotive applications to the exacting specs of enterprise systems, we have the right solution for your design.

By Technology

Technology Benefits Densities Configurations Supply Voltages
DDR4 SDRAM
  • High performance
  • Improved power savings
  • Increased data rates
  • Faster burst accesses
4Gb x4, x8, x16 1.2V
DDR3 SDRAM
  • Enables large memory subsystems
  • Increased power efficiency
  • High performance
  • Increased bandwidth

1Gb–4Gb x4, x8, x16 1.35V, 1.5V
DDR2 SDRAM
  • Enables large memory subsystems
  • Low-voltage, energy-efficient options
  • Extended operating temperatures


256Mb–4Gb x4, x8, x16 1.55V, 1.8V
DDR SDRAM
  • Extended operating temperatures
  • JEDEC-compliant

256MB–1GB x4, x8, x16 2.5, 2.6V
SDRAM
  • Extended operating temperatures
  • JEDEC-compliant
  • Easy-to-implement
64MB–512MB x4, x8, x16, x32 3.3V
GDDR5
  • Ultra-high memory bandwidth
  • High performance
  • System stability
  • x32/x16peration

2Gb–4Gb x32 1.5V
RLDRAM Memory
  • High-performance
  • Ultra-low bus turnaround time enables higher sustainable bandwidth
  • Ideal choice for packet buffering and inspections
  • Extended operating temperatures

288Mb, 576Mb, 1Gb x9, x18, x36 1.8V core; 1.5V or 1.8V I/O
Mobile LPDRAM
  • Available in multiple technologies: LPSDR, LPDDR, LPDDR2, and LPDDR3
  • Low standby current and low self refresh for extended battery life
  • Temperature-compensated self refresh (TCSR) and partial-array self refresh (PASR) modes

128Mb–16Gb x16, x32, x64 1.2V–3.3V
PSRAM/CellularRAM
  • Low power consumption, high speed read and write function
  • Compatible with the standard wireless Flash interface
  • Temperature-compensated refresh (TCR) and partial-array refresh PAR)

16–128Mb x16 1.7–1.95V core,
1.7–3.3V I/O,
1.7–3.6V I/O

Resources