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Your Innovation, Our Memory

Emerging technologies require innovation on a whole new scale. See how we partner closely with our customers to gain unique insights about how we can optimize our memory solutions to enable your innovations—and help you change the world.

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Memory for Automotive

Technology is reshaping the concept of driving. Automakers are developing countless new driver-assistance features and systems. See how Micron’s memory solutions are helping to enable these new supercomputing capabilities.

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For more than 30 years Micron has redefined innovation by designing, developing, and manufacturing some of the world’s most advanced technologies.

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Elpida Is Now Micron

With the combined strength of our products, technology, and team members—our customers now have access to the broadest portfolio of best-in-class technology.

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Managing the Challenges of Server Speed and Density

Our high-speed, high-density FBDIMMs can give you virtually unlimited scalability of density and high-bandwidth solutions, all with an extremely reliable channel protocol.
How do we do it? At the core of FBDIMM architecture is an advanced memory buffer (AMB), which provides an interface from the DRAM through the high-speed information channel. Our FBDIMM technology uses DDR2 memory with a different topology, and this high-speed, point-to-point interface rapidly transmits signals among the controller, memory devices, and other modules, enabling simultaneous task performance (and eliminating additional dead time), while reducing soft errors.

With data rates as high as 4.8 Gb/s, our FBDIMMs enable extremely fast buffering—optimizing server performance, limiting data inaccuracies, avoiding crashes, and improving overall reliability.

 

  • The Advanced Memory Buffer (AMB) maintains signal integrity and improves error detection methods, reducing soft errors.
  • Wide range of densities supports moderate to high-density applications; eliminates memory capacity limits
  • Multiple voltages enable flexibility for designs
  • Improved Error Detection incorporates an enhanced cyclic redundancy check (CRC) that provides greater data and address/command protection than traditional server modules.
  • High-density solutions extend memory capacity.
  • Reliability: we use stringent quality and reliability tests and work with chipset vendors to validate our modules to ensure you get high-quality parts.
  • An extended temperature range provides optimum performance and proven reliability in rugged environments.

 

Featured Article

Serial Presence Detect Tool

Online Tools

To get the most current serial presence-detect (SPD) data, simply visit our online tool to view and download your SPD information.

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Technical Resources

Technical Note: FBDIMM Channel Utilization

FBDIMMs offer virtually unlimited scalability of density, a significantly reduced number of routed motherboard signals, and high bandwidth solutions, all with an extremely reliable channel protocol.

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For FBDIMM (7)
Title & Description Secure ID# Updated Type
DRAM for Every Design: Micron DRAM Module Form Factors Quick Reference Guide: (PDF 159.58 KB)Accelerate your time-to-market with quality DRAM modules rigorously tested for reliability in a wide range of applications. From the cost-sensitive needs of consumer computing to the extreme temperature and performance needs of industrial applications to the exacting specifications of enterprise systems, we have the right solution for your design. 08/2014 Product Flyer
Server Memory Solutions for the Impending Data Center Power Crisis: (PDF 309.03 KB)Facts about data center energy consumption and information about how to achieve significant power savings with Micron's low-voltage memory modules for servers. 12/2009 White Paper
Driving Down Power Consumption in Data Centers: (PDF 219.05 KB)A success story about how Egenera increased the energy efficiency of its data center virtualization systems by designing in Micron's low-voltage memory. 12/2009 Case Study
FBDIMM Channel Utilization (Bandwidth and Power): (PDF 1.21 MB)Newly introduced FBDIMMs offer virtually unlimited scalability of density, a significantly reduced number of routed motherboard signals, and high bandwidth solutions, all with an extremely reliable channel protocol TN-47-21 12/2009 Technical Note
Proper Handling of Micron DIMMs - Simplified Chinese: (PDF 482.47 KB) 12/2009 Module Handling Guide
Designing for 1.5V, Low-Power FBDIMMs: (PDF 980.89 KB)Discusses memory power trends and identifies new low-voltage solutions for high-density DDR2 memory designs TN-47-22 05/2008 Technical Note
Fully Buffered DIMM Flyer: (PDF 146.44 KB)Describes how FBDIMMs unleash server capacity by removing the density/performance tradeoff of traditional stub-bus architectures 12/2007 Product Flyer
For DRAM Modules (28)
Title & Description Secure ID# Updated Type
Module Part Numbering Systems: (PDF 85.87 KB)Part numbering guides for Micron DDR4, DDR3, DDR, DDR, and SDRAM modules. 06/2014 Part Numbering Guide
Routing Guidelines for Micron’s HMC-15G-SR: (PDF 3.3 MB)Provides sound methods, proven solutions, and detailed PCB layout guidelines to enable successful designs using Micron’s HMC. TN-43-03 HMC TN-43-03 06/2013 Technical Note
Proper Handling Procedures for Modules and SSDs: (PDF 1.02 MB)Includes procedures for how to properly handle modules and SSDs. CSN-23 05/2013 Customer Service Note
DDR3 Networking Module Summary: (PDF 185.18 KB) 01/2013 Other Documents
Recommended Soldering Parameters: (PDF 173.37 KB)Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products. TN-00-15 12/2012 Technical Note
Bypass Capacitor Selection for High-Speed Designs: (PDF 481.9 KB)Describes bypass capacitor selection for high-speed designs. TN-00-06 03/2011 Technical Note
Micron Wire-Bonding Techniques: (PDF 66.13 KB)This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products. TN-00-22 11/2010 Technical Note
Uprating of Semiconductors for High-Temperature Applications: (PDF 428.33 KB)Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications TN-00-18 05/2010 Technical Note
Accelerate Design Cycles with Simulation Models: (PDF 206.91 KB)Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design. TN-00-09 02/2010 Technical Note
Design Guide for Two DDR3-1066 UDIMM Systems: (PDF 1.1 MB)Rev. B, Design guide to assist board designers implementing products using UDIMM systems TN-41-08 01/2010 Technical Note
The Future of Memory and Storage: (PDF 1.54 MB)Overview of trends for main memory and Flash memory 12/2009 Presentation
DDR System Design Considerations: (PDF 3.46 MB)DDR overview 12/2009 Presentation
Competitive DDR Memory Subsystems: (PDF 2.64 MB)DDR milestones and platform design 12/2009 Presentation
Memory Module Serial Presence-Detect: (PDF 505.83 KB)Describes how SPD is essential in helping to standardize the configuration, timing, and manufacturing information of memory modules TN-04-42 12/2009 Technical Note
Understanding Signal Integrity: (PDF 1.64 MB)Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life TN-00-20 12/2009 Technical Note
Proper Installation Procedures for Micron DIMMs: (PDF 419.89 KB) 12/2009 Module Handling Guide
Proper Installation of Micron DIMMs - Traditional Chinese: (PDF 758.93 KB) 12/2009 Module Handling Guide
Proper Installation of Micron DIMMs - Spanish: (PDF 546.81 KB) 12/2009 Module Handling Guide
Proper Installation of Micron DIMMs - Simplified Chinese: (PDF 592.58 KB) 12/2009 Module Handling Guide
Proper Installation of Micron DIMMs - Japanese: (PDF 394.2 KB) 12/2009 Module Handling Guide
Proper Handling Procedures for Micron DIMMs: (PDF 396.18 KB) 12/2009 Module Handling Guide
Proper Handling of Micron DIMMs - Traditional Chinese: (PDF 539.92 KB) 12/2009 Module Handling Guide
Proper Handling of Micron DIMMs - Spanish: (PDF 461.82 KB) 12/2009 Module Handling Guide
Proper Handling of Micron DIMMs - Japanese: (PDF 453.96 KB) 12/2009 Module Handling Guide
DRAM Module Form Factors: (PDF 435.56 KB)Compares the most common DRAM module form factors TN-04-55 09/2009 Technical Note
High-Speed DRAM Controller Design: (PDF 1 MB)Identifies and discusses five key areas of DRAM controller design TN-04-54 04/2008 Technical Note
Module Pinout Decoder: (PDF 215.46 KB)Provides sorted pin assignment tables and pin location figures for use in DDR2 DIMM signal identification, tracing, and troubleshooting TN-47-03 12/2004 Technical Note
Comparing Module Parameters: (PDF 52.71 KB)Compares module parameters. TN-04-49 03/2003 Technical Note
For Products and Support (14)
Title & Description Secure ID# Updated Type
Product Marks/Product and Packaging Labels: (PDF 1.46 MB)Explains product part marking, and product and packaging labels. CSN-11 07/2014 Customer Service Note
Shipping Quantities: (PDF 1.22 MB)Provides standard part quantities for shipping. CSN-04 03/2014 Customer Service Note
RMA Procedures for Packaged Product and Bare Die Devices: (PDF 76.22 KB)Outlines standard returned material authorization (RMA) procedures, as well as the differences associated with bare die RMAs. CSN-07 01/2014 Customer Service Note
Wafer Packaging and Packaging Materials: (PDF 591.42 KB)Provides complete shipping and recycling information about each of the materials used for shipping Micron's products. CSN-20 11/2013 Customer Service Note
Thermal Applications: (PDF 246.79 KB)Describes some considerations in thermal applications for Micron memory devices TN-00-08 07/2013 Technical Note
Moisture Absorption in Plastic Packages: (PDF 97.08 KB)Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture TN-00-01 02/2013 Technical Note
Micron Component and Module Packaging: (PDF 1.41 MB)Explanation of Micron packaging labels and procedures. CSN-16 01/2013 Customer Service Note
Micron BGA Manufacturer's User Guide: (PDF 388.76 KB)Provides information to enable customers to easily integrate both leading-edge and legacy Micron's ball grid array (BGA) packages into their manufacturing processes. It is intended as a set of high-level guidelines and a reference manual describing typical package-related and manufacturing process-flow practices. CSN-33 12/2012 Customer Service Note
Electronic Data Interchange: (PDF 52.45 KB)Describes EDI transmission sets, protocol, and contacts. CSN-06 11/2012 Customer Service Note
PCN/EOL Systems: (PDF 79.21 KB)Explains Micron's product change notification and end-of-life systems. CSN-12 04/2012 Customer Service Note
Lead Frame Package User Guidelines: (PDF 245.66 KB)Discusses Micron's lead-frame package options CSN-30 05/2011 Customer Service Note
ESD Precautions for Die/Wafer Handling and Assembly: (PDF 120.81 KB)Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs. CSN-24 08/2010 Customer Service Note
Micron KGD Definitions: (PDF 65.52 KB)Describes the testing specifications and parameters for Micron's KGD-C1 and KGD-C2 DRAM die. CSN-22 07/2009 Customer Service Note
Bare Die SiPs and MCMs: (PDF 151.06 KB)Describes design considerations for bare die SiPs and MCMs. CSN-18 04/2009 Customer Service Note

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FBDIMM FAQs (2)

Can Vtt and Vref be supplied by the same supply in my system design?
With proper decoupling this can be an acceptable design. However, Micron recommends ensuring all supplies are separated. Vref tends to have more noise on it because it supplies signals that are regularly switching. A robust design would typically not connect these supplies due to the possibility of introducing this noise onto the Vtt plane which should be as stable as possible. Additionally, Vref requires much less current than Vtt.
Is there a set of trace lengths and routing rules that are standard for use when designing a system that uses a specific module technology and form factor?
No. A robust memory subsystem design that includes the use of 1 or more memory modules must be simulated in order to determine the optimum trace lengths, terminations. However, our design guides such as TN-47-01 and TN-41-08 have some best practices and design examples based on some typical system assumptions. This information is not meant to be the only way your system can be designed. It is a starting point and moreover an example of the steps used to determine the best design for your system.

DRAM Modules FAQs (5)

What is a "bank"?
A bank is an array of memory bits. Multiple arrays or banks are contained within a DRAM component. Depending on density, DRAM components may consist of 4 or 8 banks. For example, a bank may consist of 32 million rows, 4 bits across. This would equate to 128 megabits. Four of these banks in a single DRAM component would yield a 512Mb component.
What is the impedance tolerance of the driver in match-impedance mode relative to the expected value base on the perfect reference resistor connected to ZQ pin?
The impedance tolerance of the driver is ±15 percent.
Does thermal information change for IT parts?
Thermal information includes temperature limits and thermal impedance values. Temperature limits do change for IT parts (TC, TJ, and TA), but thermal impedance values (θJA, θJB, and θJC) do not because thermal impedance depends primarily on the package.
My design was based on a specification stating the JTAG was relative to VDD (1.8V), but now we’ve discovered that JTAG is actually relative to VDDQ (1.5V). It’s a fairly significant board spin to change this; what do I risk by leaving the design as-is? I assume that the specification is still for VDDQ + 0.3V = 1.8V, but with CMOS parts there’s no way I can guarantee that it won’t swing past that on transitions.
Your particular board design should not be a cause of major concern. The pins can handle the VDD voltage regardless of the VDDQ voltage.
Should the ECC memory chip share chip select and CKE signals with the other two main memory chips in our point-to-point application?
The ECC chip(s) should share the same CKE and CS# as the other devices because they are accessed as the same piece of data.

Products and Support FAQs (1)

Who do I contact if I have questions about my buymicron.com order?
If you have any questions about your order, contact buymicron.com.

Freescale Forum Attendees Score Free Micron TWRPI Modules

April 21, 2014 by Jim Cooke

Earlier this month, I attended the Freescale Technology Forum (FTF) at the Gaylord Conference Center in Dallas, TX. FTF is a unique networking and learning opportunity for embedded designers. Attendees gather in early April for Freescale president and CEO Gregg Lowe’s keynote address The “cherry on top” of this already information-rich conference came in the form of some pretty awesome &ldquo...Read More

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