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Data Sheets (1)

Orderable Parts (1)» Compare all

Orderable Part Information
Status Contact Factory Alternative Part N/A
FBGA Code N/A SPD Data N/A
MBQual Data N/A Shipping Media Dry Pack
PLP Yes Start Date 05/04/2011

Product Name Axcell Component Density 512Mb
Part Status Code Contact Factory RoHS Yes
Depth Bus Width x8/x16
Voltage 2.7V-3.6V Package FBGA
Pin Count 64-ball Clock Rate
Industry Speed Cycle Time (min)
Operating Temp -40C to +85C



For PC28F512M29EWHD (10)
Title & Description Secure ID# Updated Type
AddEmailRoHS Certificate of Compliance: (PDF 244 KB) Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2002/95/EC, a.k.a. Restriction of Hazardous Substances (RoHS) Directive. 11/2014 RoHS Certification
AddChina RoHS Certificate: (PDF 244 KB) Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products. 11/2014 RoHS Certification
M29EW 256Mb, 512Mb, 1Gb, 2Gb, 3V Parallel NOR Flash: M29EW: (PDF 1 MB)(x8/x16), 3V, Uniform Block, Parallel NOR Flash M29EW 09/2014 Data Sheet
How to Migrate to Micron MT29EW from Spansion Flash (S29GL 256 Mbit, 512 Mbit, 1 Gbit and S70GL 2 Gbit): (PDF 312.7 KB)This application note describes how to convert a system design from Spansion S29GL (including P series and N series) and S70GL-P Flash to Numonyx Axcell M29EW (MLC) Flash. AN108109 05/2014 Technical Note
Parallel NOR Password Access (M29EW, P30, P33, J3): (PDF 111.06 KB)Parallel NOR Password Access Datasheet Addendum (M29EW, P30, P33, J3) AN-916 09/2011 Technical Note
M29EW Secure Datasheet Addendum : (PDF 236.83 KB)M29EW Secure Datasheet Addendum AN-308031 09/2011 Technical Note
Patching the Linux Kernel and U-Boot for Micron® M29 Flash Memory: (PDF 551.89 KB)This technical note provides a guide for modifying the memory technology device (MTD) layer software for the purpose of correctly using Micron® M29 family Flash memory devices in a Linux environment. This document also describes the modifications required to make a Linux environment work with M29 Flash memory devices. TN-13-07 04/2011 Technical Note
Password Protecting Flash Memory Blocks: (PDF 404.22 KB)This document describes a method of password protecting blocks using Micron's M29EW device as an example. TN-12-05 03/2011 Technical Note
Software Driver for M29EW NOR Flash Memory: (PDF 279.15 KB)This technical note describes the C library source code for the Micron M29EW parallel NOR Flash memory device using the Flash device driver software interface V3. Download the low-level driver described in this document here. TN-13-12 11/2010 Technical Note
How to Migrate to Numonyx M29W640G from Spansion S29GL064N Flash Memory: (PDF 242.74 KB)This application note explains how to migrate an application based on the S29GL064N Flash memory to an M29W640G Flash memory. AN-309009 11/2010 Technical Note
For Mobile LPDRAM (14)
Title & Description Secure ID# Updated Type
Industrial and Multimarket Application Memory Flyer: (PDF 398.61 KB) Our extensive and stable portfolio of IMM-focused memory solutions empower technology developments in automotive, industrial, medical, manufacturing, and other multimarket segments. 09/2014 Product Flyer
LPDRAM for Mobile and Embedded Applications : (PDF 345.17 KB) This flyer highlights the key advantages of designing Micron’s low-power (LPDRAM) into mobile and embedded applications. 05/2014 Product Flyer
Technical Note: Recommended Soldering Conditions & Storage Conditions: (PDF 194.25 KB)This document shows referential examples of recommended soldering and storage conditions for DRAM products provided by Elpida Memory, Inc. E0591E22 02/2014 Technical Note
Technical Note: Low-Power Function of Mobile RAM - Partial Array Self Refresh (PASR): (PDF 67.62 KB)This technical note describes Partial Array Self Refresh (PASR), one of the low-power functions that have been adapted to Mobile DRAM. E0597E10 02/2014 Technical Note
Technical Note: Low-Power Function of Mobile RAM - Deep Power Down (DPD): (PDF 49.74 KB)This technical note describes Deep Power Down (DPD), one of the low-power functions that have been adapted to Mobile DRAM. E0598E21 02/2014 Technical Note
Technical Note: Low-Power Function of Mobile RAM - Auto Temperature Compensated Self Refresh (ATCSR): (PDF 65.37 KB)This technical note describes Auto Temperature Compensated Self Refresh (ATCSR), one of the low-power functions that have been adapted to Mobile DRAM. E0599E20 02/2014 Technical Note
TN-42-01: LPDDR2 System Power Calculator: (XLSX 137.55 KB)Provides formulas for calculating LPDDR2 system power requirements. Rev. 0.6 TN-42-01 05/2013 Power Calculator
Why DRAM for Ultrathins: (PDF 64.92 KB)Micron’s DRAM portfolio is the industry’s broadest and includes every type and form factor used in today’s ultrathin and Ultrabook designs. 02/2013 Product Flyer
Backward Compatibility for Faster LPDDR SDRAM: (PDF 105.69 KB)This technical note reviews the timing differences between the faster and slower LPDDR SDRAM speeds and explains how faster parts function compatibly with slower parts. TN-46-23 02/2013 Technical Note
TN-46-22: T69M (50nm) to T79M (4xnm) Transition Guide: (PDF 147.18 KB)Transition guide for migration from T69M to T79M TN-46-22 06/2011 Technical Note
Thinning Considerations for Wafer Products: (PDF 73.58 KB)Information on optimal wafer-thinning processes to meet specific customer requirements TN-00-19 10/2009 Technical Note
Power-Saving Features of Mobile LPDRAM: (PDF 255.93 KB)Addresses the power-saving features and power calculations of low-power Mobile LPDRAM memory TN-46-12 05/2009 Technical Note
Mobile LPDRAM Unterminated Point-to-Point System Design: Layout and Routing Tips: (PDF 552.55 KB)Provides guidance for the development of multilayer board designs TN-46-19 11/2008 Technical Note
Mobile LPDDR Versus Standard DDR SDRAM: (PDF 432.44 KB)An overview of the functional and mechanical differences between low-power and standard DDR and a description of exclusive features of LPDDR TN-46-15 12/2007 Technical Note
For DRAM (15)
Title & Description Secure ID# Updated Type
HMC Part Numbering System: (PDF 59 KB)Part numbering guide for Hybrid Memory Cube 10/2014 Part Numbering Guide
DRAM Component Part Numbering System: (PDF 46.77 KB)Part numbering guide for DDR4/DDR3/DDR2/DDR/SDR SDRAM, Mobile LPDRAM, and RLDRAM components 10/2014 Part Numbering Guide
Legacy LPDRAM Part Numbering System: (PDF 114.47 KB)Part numbering guide for legacy LPDDR2 and LPDRR3 PoP and FBGA components 05/2014 Part Numbering Guide
SEMI Wafer Map Format: (PDF 114.26 KB)Micron has adopted the wafer map file format approved by Semiconductor Equipment and Materials International (SEMI). With SEMI formatting, Micron's customers can be confident they will always receive consistent, compatible, reliable map files. TN-00-21 03/2014 Technical Note
Routing Guidelines for Micron’s HMC-15G-SR: (PDF 3.3 MB)Provides sound methods, proven solutions, and detailed PCB layout guidelines to enable successful designs using Micron’s HMC. TN-43-03 HMC TN-43-03 06/2013 Technical Note
Recommended Soldering Parameters: (PDF 173.37 KB)Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products. TN-00-15 12/2012 Technical Note
Bypass Capacitor Selection for High-Speed Designs: (PDF 481.9 KB)Describes bypass capacitor selection for high-speed designs. TN-00-06 03/2011 Technical Note
Micron Wire-Bonding Techniques: (PDF 66.13 KB)This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products. TN-00-22 11/2010 Technical Note
Uprating of Semiconductors for High-Temperature Applications: (PDF 428.33 KB)Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications TN-00-18 05/2010 Technical Note
Accelerate Design Cycles with Simulation Models: (PDF 206.91 KB)Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design. TN-00-09 02/2010 Technical Note
Understanding Signal Integrity: (PDF 1.64 MB)Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life TN-00-20 12/2009 Technical Note
IBIS Behavioral Models: (PDF 163.98 KB)Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site. TN-00-07 11/2009 Technical Note
Understanding Quality and Reliability Requirements for Bare Die Applications: (PDF 142.04 KB)Describes the quality and reliability requirements for bare die applications TN-00-14 10/2009 Technical Note
FBGA Date Codes: (PDF 22.36 KB)Date codes for FBGA-packaged components 08/2005 Part Numbering Guide
FBGA Decoder: Micron's FBGA Part Marking Decoder makes it easier to understand part marking. Tool
For Products and Support (14)
Title & Description Secure ID# Updated Type
Micron Component and Module Packaging: (PDF 1.35 MB)Explanation of Micron packaging labels and procedures. CSN-16 11/2014 Customer Service Note
Product Marks/Product and Packaging Labels: (PDF 1.58 MB)Explains product part marking, and product and packaging labels. CSN-11 10/2014 Customer Service Note
Shipping Quantities: (PDF 1.22 MB)Provides standard part quantities for shipping. CSN-04 03/2014 Customer Service Note
RMA Procedures for Packaged Product and Bare Die Devices: (PDF 76.22 KB)Outlines standard returned material authorization (RMA) procedures, as well as the differences associated with bare die RMAs. CSN-07 01/2014 Customer Service Note
Wafer Packaging and Packaging Materials: (PDF 591.42 KB)Provides complete shipping and recycling information about each of the materials used for shipping Micron's products. CSN-20 11/2013 Customer Service Note
Thermal Applications: (PDF 246.79 KB)Describes some considerations in thermal applications for Micron memory devices TN-00-08 07/2013 Technical Note
Moisture Absorption in Plastic Packages: (PDF 97.08 KB)Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture TN-00-01 02/2013 Technical Note
Micron BGA Manufacturer's User Guide: (PDF 388.76 KB)Provides information to enable customers to easily integrate both leading-edge and legacy Micron's ball grid array (BGA) packages into their manufacturing processes. It is intended as a set of high-level guidelines and a reference manual describing typical package-related and manufacturing process-flow practices. CSN-33 12/2012 Customer Service Note
Electronic Data Interchange: (PDF 52.45 KB)Describes EDI transmission sets, protocol, and contacts. CSN-06 11/2012 Customer Service Note
PCN/EOL Systems: (PDF 79.21 KB)Explains Micron's product change notification and end-of-life systems. CSN-12 04/2012 Customer Service Note
Lead Frame Package User Guidelines: (PDF 245.66 KB)Discusses Micron's lead-frame package options CSN-30 05/2011 Customer Service Note
ESD Precautions for Die/Wafer Handling and Assembly: (PDF 120.81 KB)Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs. CSN-24 08/2010 Customer Service Note
Micron KGD Definitions: (PDF 65.52 KB)Describes the testing specifications and parameters for Micron's KGD-C1 and KGD-C2 DRAM die. CSN-22 07/2009 Customer Service Note
Bare Die SiPs and MCMs: (PDF 151.06 KB)Describes design considerations for bare die SiPs and MCMs. CSN-18 04/2009 Customer Service Note

Please Note: To view Secure Documents (Secure Lock) please log in or click on a secured document to request access.



For PC28F512M29EWHD (5)
Title & Description Secure ID# Updated Type
M29EW_IBIS, 512Mb, 65nm, FBGA64, 1.65-1.95V, v1.02: (IBS 117.38 KB) 10/2012 Sim Model
M29EW_IBIS, 512Mb, 65nm, FBGA64, 2.7-3.6V, v1.02: (IBS 117.38 KB) 05/2011 Sim Model
M29EW_Verilog, 512Mb, 65nm, v1.3: (ZIP 238.9 KB) 02/2011 Sim Model
M29EW_IBIS, 512Mb, 65nm, FBGA64, 1.65-3.6V, v1.02: (IBS 117.48 KB) 02/2011 Sim Model
M29EW (32Mb, 64Mb, 128Mb, 256Mb, 512Mb, 1Gb, 2Gb) General Low-Level Driver: (ZIP 29.33 KB)General low-level driver for M29EW parallel NOR. Download the technical note for this driver here. Parallel NOR 07/2010 NOR Flash Software
For Mobile LPDRAM (0)
Title & Description Secure ID# Updated Type
For DRAM (0)
Title & Description Secure ID# Updated Type
For Products and Support (0)
Title & Description Secure ID# Updated Type

Please Note: To view Secure Documents (Secure Lock) please log in or click on a secured document to request access.


  1. Micron Models: By downloading any Micron model from this site, you must agree to the terms of Micron's Simulation Models License Agreement. If you do not agree to terms, you do not have permission to use the site or download material from it.
  2. Non-Micron Models: For your convenience, Micron links to third-party simulation models. Note that Micron does not guarantee functionality or accuracy of these models.

Mobile LPDRAM FAQs (14)

What Mobile LPDRAM parts have been validated on the OMAP35x?
Micron works closely with Texas Instruments (TI) to validate and optimize our parts for the OMAP35x processors. As we work with the OMAP35x team, the list of validated memory devices expands frequently. For the most current information, contact your local Micron support, or contact Micron Product Sales Support.
What makes Micron's Mobile LPDRAM unique?
We offer a comprehensive Mobile LPDRAM product portfolio, with a wide range of densities and package options (including JEDEC-standard VFBGA, Known Good Die, and package-on-package). With nearly a decade of Mobile LPDRAM experience, our worldwide technical support team can provide the expertise and assistance you need to get your designs to market faster.
What is the life expectancy of Micron's Mobile LPDRAM products?
We're excited about this fast-growing market. We plan to manufacture Mobile LPDRAM for many years to come and plan to continue to shrink our designs to achieve higher densities.
What’s the difference between Mobile DRAM and Mobile LPDRAM?
There is no difference; Mobile DRAM and Mobile LPDRAM are the same product. We opted to add the "LP" prefix to our Mobile DRAM product line to align with the common terminology used throughout the industry and to ensure our customers know at a glance that our Mobile DRAM is a low-power memory device. In addition to the family name change, Mobile DDR SDRAM and Mobile SDR SDRAM are now called Mobile LPDDR and Mobile LPSDR, respectively. Our Web site has been wholly converted to the Mobile LPDRAM naming convention, but because we’re updating our PDFs as they come up for review you may see a few older technical documents that still use the old Mobile DRAM terminology.
How does LPDDR3 differ from DDR3L-RS?

LPDDR3 is optimized for battery life and portability. DDR3L-RS is a low IDD6 version of the DDR3L die and offers a balance in price versus performance, along with improved standby power.

The part I was using is obsolete and the replacement is a faster speed grade. Can I run the Mobile LPDRAM parts at a lower speed?
Yes. A Mobile LPDRAM part can be run at any speed equal to or slower than its rated speed grade.
Where are Micron's Mobile LPDRAM products used today?
Our Mobile LPDRAM products are used in a wide variety of applications. The most popular are consumer electronic devices like digital still cameras and MP3 players, as well as mobile phones and PDAs. Automotive, medical, and military companies, which are very stringent on quality and reliability, use Mobile LPDRAM to take advantage of the wide industrial temperature range of –40°C to +105°C, which other memory vendors don’t support. It’s also designed in to a variety of networking applications.
Are your Mobile LPDRAM parts JEDEC-compliant?
We design our parts to meet or exceed the JEDEC specification. As standards change, we will make the necessary changes to ensure our parts meet new specifications. Any changes made will be noted in a product change notice (PCN) and sent to our customers.
Are Micron's Mobile LPDRAM products green/RoHS compliant?
Yes. Micron’s green engineering program is RoHS-compliant and conforms with most of the world’s emerging environmental standards, including those in Asia and Europe.
How does LPDDR3 differ from LPDDR2?

LPDDR3 increases performance to 1600 Mb/s (versus 1066 Mb/s for LPDDR2). Additional changes include write leveling, C/A (command/address) training, and a lower I/O capacitance limit to improve timing.

Do you recommend a x8, x16, or x32 configuration for mobile applications?
Mobile LPDRAM is offered in x16, x32, and x64. To make the best Mobile LPDRAM choice, consider the application, bandwidth/throughput, physical space on the PCB, and power consumption.
What is Mobile LPDRAM?
Optimized for products where power consumption is a concern, our low-power Mobile LPDRAM devices combine leading-edge technologies and packaging options to meet space requirements and extend battery life. Mobile LPDRAM is available with DDR/SDR interface.
Is Mobile LPDRAM a growing market?
Absolutely. iSuppli estimates that the market for Mobile LPDRAM is growing rapidly, with a CAGR of 21.2% from 2006 to 2011. We’re continuing to develop advanced Mobile LPDRAM solutions to meet this growing market.
Does Micron's Mobile LPDRAM cost more than standard DRAM?
It depends. Density plays a major role in price comparisons between Mobile LPDRAM and standard SDR/DDR. Also, since Mobile LPDRAM is offered in standard configurations of x16, x32 and x64, you may be able to reduce your overall BOM cost if your application currently uses two x16 components to support a x32 bus. You could use one x32 Mobile LPDRAM instead of two x16 standard DRAM. Contact your local rep for cost information.


What is a "bank"?
A bank is an array of memory bits. Multiple arrays or banks are contained within a DRAM component. Depending on density, DRAM components may consist of 4 or 8 banks. For example, a bank may consist of 32 million rows, 4 bits across. This would equate to 128 megabits. Four of these banks in a single DRAM component would yield a 512Mb component.
What is the impedance tolerance of the driver in match-impedance mode relative to the expected value base on the perfect reference resistor connected to ZQ pin?
The impedance tolerance of the driver is ±15 percent.
Does thermal information change for IT parts?
Thermal information includes temperature limits and thermal impedance values. Temperature limits do change for IT parts (TC, TJ, and TA), but thermal impedance values (θJA, θJB, and θJC) do not because thermal impedance depends primarily on the package.
My design was based on a specification stating the JTAG was relative to VDD (1.8V), but now we’ve discovered that JTAG is actually relative to VDDQ (1.5V). It’s a fairly significant board spin to change this; what do I risk by leaving the design as-is? I assume that the specification is still for VDDQ + 0.3V = 1.8V, but with CMOS parts there’s no way I can guarantee that it won’t swing past that on transitions.
Your particular board design should not be a cause of major concern. The pins can handle the VDD voltage regardless of the VDDQ voltage.
Should the ECC memory chip share chip select and CKE signals with the other two main memory chips in our point-to-point application?
The ECC chip(s) should share the same CKE and CS# as the other devices because they are accessed as the same piece of data.
Is there a recommended lowest working frequency for SDRAM?
Because SDRAM does not have a DLL, there is no recommended lowest frequency. SDRAM parts will work at very low frequencies if all data sheet specifications are met. It is important to maintain a good slew rate, however, since a very slow slew rate will affect setup and hold-time transitions. Also, for operating frequencies of 45 MHz, tCKS = 3.0ns. For more information, see TN-48-09.
Can the SDRAM clock frequency be changed?
Micron SDRAM data sheets require that the clock frequency be constant during access or precharge states (READ, WRITE, tWR, and PRECHARGE commands). At other times frequency should not matter much because there is no DLL in SDRAM however, we do not recommend it. Lowering SDRAM frequency is OK even if you are not doing an LMR and CAS latency change. In case of increasing frequency, ensure tCK and CAS latency specifications are met. In either case, all other data sheet timing specifications should be adhered to.
Can CKE be tied HIGH throughout SDRAM operation (initialization and normal operation)?
JEDEC does not specify the exact state of CKE during initialization; it is supplier specific. Micron strongly recommends CKE be kept at an LVTTL logic LOW before applying a stable CLK signal. During normal operation, CKE can be tied HIGH. The initial LOW state of CKE prevents parts from receiving an illegal LMR command, which could put the part into an unknown or unexpected state.

Products and Support FAQs (1)

Who do I contact if I have questions about my buymicron.com order?
If you have any questions about your order, contact buymicron.com.