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Data Sheets (1)

Orderable Parts (1)» Compare all


Fake
Orderable Part Information
Status Production Alternative Part N/A
FBGA Code N/A SPD Data N/A
MBQual Data N/A Shipping Media Dry Pack


Fake
Specs
Technology Parallel NOR Flash Module Density
Part Status Code Production RoHS Yes
Number of Components Depth
Bus Width x8/x16 Pin Count 56-pin
Operating Temp -40C to +85C MT/s
Industry Speed CAS Latency
Voltage 2.7V-3.6V Component Config
ECC Module Rank
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For JS28F00AM29EWLA (10)
Title & Description Secure ID# Updated Type
AddEmailRoHS Certificate of Compliance: (PDF 244 KB) Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2002/95/EC, a.k.a. Restriction of Hazardous Substances (RoHS) Directive. 08/2014 RoHS Certification
AddChina RoHS Certificate: (PDF 244 KB) Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products. 08/2014 RoHS Certification
How to Migrate to Micron MT29EW from Spansion Flash (S29GL 256 Mbit, 512 Mbit, 1 Gbit and S70GL 2 Gbit): (PDF 312.7 KB)This application note describes how to convert a system design from Spansion S29GL (including P series and N series) and S70GL-P Flash to Numonyx Axcell M29EW (MLC) Flash. AN108109 05/2014 Technical Note
M29EW 256Mb, 512Mb, 1Gb, 2Gb, 3V Parallel NOR Flash: M29EW: (PDF 849.55 KB)(x8/x16), 3V, Uniform Block, Parallel NOR Flash M29EW 08/2012 Data Sheet
Parallel NOR Password Access (M29EW, P30, P33, J3): (PDF 111.06 KB)Parallel NOR Password Access Datasheet Addendum (M29EW, P30, P33, J3) AN-916 09/2011 Technical Note
M29EW Secure Datasheet Addendum : (PDF 236.83 KB)M29EW Secure Datasheet Addendum AN-308031 09/2011 Technical Note
Patching the Linux Kernel and U-Boot for Micron® M29 Flash Memory: (PDF 551.89 KB)This technical note provides a guide for modifying the memory technology device (MTD) layer software for the purpose of correctly using Micron® M29 family Flash memory devices in a Linux environment. This document also describes the modifications required to make a Linux environment work with M29 Flash memory devices. TN-13-07 04/2011 Technical Note
Password Protecting Flash Memory Blocks: (PDF 404.22 KB)This document describes a method of password protecting blocks using Micron's M29EW device as an example. TN-12-05 03/2011 Technical Note
Software Driver for M29EW NOR Flash Memory: (PDF 279.15 KB)This technical note describes the C library source code for the Micron M29EW parallel NOR Flash memory device using the Flash device driver software interface V3. Download the low-level driver described in this document here. TN-13-12 11/2010 Technical Note
How to Migrate to Numonyx M29W640G from Spansion S29GL064N Flash Memory: (PDF 242.74 KB)This application note explains how to migrate an application based on the S29GL064N Flash memory to an M29W640G Flash memory. AN-309009 11/2010 Technical Note
For UDIMM (14)
Title & Description Secure ID# Updated Type
8GB (x64, DR) 284-Pin DDR4 UDIMM: (PDF 397.78 KB)Rev. B 01/2014 Data Sheet
DRAM for Every Design: Micron DRAM Module Form Factors Quick Reference Guide: (PDF 51.53 KB)Accelerate your time-to-market with quality DRAM modules rigorously tested for reliability in a wide range of applications. From the cost-sensitive needs of consumer computing to the extreme temperature and performance needs of industrial applications to the exacting specifications of enterprise systems, we have the right solution for your design. 01/2014 Product Flyer
4GB (x72, ECC, SR) 284-Pin DDR4 UDIMM: (PDF 355.88 KB)Rev. A 03/2013 Data Sheet
DDR Unbuffered DIMM Design Standard: (PDF 597.36 KB)PC1600/2100 Rev 1.1 12/2009 Other Documents
Proper Handling of Micron DIMMs - Simplified Chinese: (PDF 482.47 KB) 12/2009 Module Handling Guide
DDR333 Design Guide for Two-DIMM Unbuffered Systems: (PDF 5.93 MB)Describes DDR333 design guide for two-DIMM unbuffered systems TN-46-07 12/2002 Technical Note
UDIMM Raw Card C2: (ZIP 1.55 MB)Implemented: Unbuffered Raw Card C2 This release added series stub resistors for the C/A signals and incorporated design changes based on feedback and hardware analysis of Raw Card C 11/2001 Other Documents
UDIMM Raw Card C1: (ZIP 1.16 MB)Note: previous revision of C2 11/2001 Other Documents
UDIMM Raw Card C0: (ZIP 1.07 MB)Note: previous revision of C1 11/2001 Other Documents
UDIMM Raw card B1: (ZIP 1.85 MB)Project: Unbuffered Raw Card B (x8-based dual-bank x64/x72) 11/2001 Other Documents
UDIMM Raw Card B0: (ZIP 1.62 MB)Note: previous reversion of B1 11/2001 Other Documents
UDIMM Raw Card A0: (ZIP 1.29 MB)Raw Card A is a single-bank, single-sided PCB for use with x8 DDR SDRAM components 11/2001 Other Documents
JEDEC Mechanical Dimensions: (PDF 301.7 KB)184-Pin DIMM 08/1998 Other Documents
Micron Validated Memory: The Module Search Tool can be used in conjunction with the sections below to find information on Micron validated DDR3 SDRAM modules. Tool
For DRAM Modules (29)
Title & Description Secure ID# Updated Type
Module Part Numbering Systems: (PDF 85.87 KB)Part numbering guides for Micron DDR4, DDR3, DDR, DDR, and SDRAM modules. 06/2014 Part Numbering Guide
Routing Guidelines for Micron’s HMC-15G-SR: (PDF 3.3 MB)Provides sound methods, proven solutions, and detailed PCB layout guidelines to enable successful designs using Micron’s HMC. TN-43-03 HMC TN-43-03 06/2013 Technical Note
Proper Handling Procedures for Modules and SSDs: (PDF 1.02 MB)Includes procedures for how to properly handle modules and SSDs. CSN-23 05/2013 Customer Service Note
DDR3 Networking Module Summary: (PDF 185.18 KB) 01/2013 Other Documents
Recommended Soldering Parameters: (PDF 173.37 KB)Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products. TN-00-15 12/2012 Technical Note
Bypass Capacitor Selection for High-Speed Designs: (PDF 481.9 KB)Describes bypass capacitor selection for high-speed designs. TN-00-06 03/2011 Technical Note
Micron Wire-Bonding Techniques: (PDF 66.13 KB)This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products. TN-00-22 11/2010 Technical Note
Uprating of Semiconductors for High-Temperature Applications: (PDF 428.33 KB)Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications TN-00-18 05/2010 Technical Note
Accelerate Design Cycles with Simulation Models: (PDF 206.91 KB)Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design. TN-00-09 02/2010 Technical Note
Design Guide for Two DDR3-1066 UDIMM Systems: (PDF 1.1 MB)Rev. B, Design guide to assist board designers implementing products using UDIMM systems TN-41-08 01/2010 Technical Note
The Future of Memory and Storage: (PDF 1.54 MB)Overview of trends for main memory and Flash memory 12/2009 Presentation
DDR System Design Considerations: (PDF 3.46 MB)DDR overview 12/2009 Presentation
Competitive DDR Memory Subsystems: (PDF 2.64 MB)DDR milestones and platform design 12/2009 Presentation
Memory Module Serial Presence-Detect: (PDF 505.83 KB)Describes how SPD is essential in helping to standardize the configuration, timing, and manufacturing information of memory modules TN-04-42 12/2009 Technical Note
Understanding Signal Integrity: (PDF 1.64 MB)Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life TN-00-20 12/2009 Technical Note
Proper Installation Procedures for Micron DIMMs: (PDF 419.89 KB) 12/2009 Module Handling Guide
Proper Installation of Micron DIMMs - Traditional Chinese: (PDF 758.93 KB) 12/2009 Module Handling Guide
Proper Installation of Micron DIMMs - Spanish: (PDF 546.81 KB) 12/2009 Module Handling Guide
Proper Installation of Micron DIMMs - Simplified Chinese: (PDF 592.58 KB) 12/2009 Module Handling Guide
Proper Installation of Micron DIMMs - Japanese: (PDF 394.2 KB) 12/2009 Module Handling Guide
Proper Handling Procedures for Micron DIMMs: (PDF 396.18 KB) 12/2009 Module Handling Guide
Proper Handling of Micron DIMMs - Traditional Chinese: (PDF 539.92 KB) 12/2009 Module Handling Guide
Proper Handling of Micron DIMMs - Spanish: (PDF 461.82 KB) 12/2009 Module Handling Guide
Proper Handling of Micron DIMMs - Japanese: (PDF 453.96 KB) 12/2009 Module Handling Guide
DRAM Module Form Factors: (PDF 435.56 KB)Compares the most common DRAM module form factors TN-04-55 09/2009 Technical Note
High-Speed DRAM Controller Design: (PDF 1 MB)Identifies and discusses five key areas of DRAM controller design TN-04-54 04/2008 Technical Note
Module Pinout Decoder: (PDF 215.46 KB)Provides sorted pin assignment tables and pin location figures for use in DDR2 DIMM signal identification, tracing, and troubleshooting TN-47-03 12/2004 Technical Note
Comparing Module Parameters: (PDF 52.71 KB)Compares module parameters. TN-04-49 03/2003 Technical Note
Serial Presence Detect : Micron’s SPD data conforms to JEDEC industry standards and is available through Micron’s SPD tool with your Micron module part number. Tool
For Products and Support (14)
Title & Description Secure ID# Updated Type
Product Marks/Product and Packaging Labels: (PDF 1.46 MB)Explains product part marking, and product and packaging labels. CSN-11 07/2014 Customer Service Note
Shipping Quantities: (PDF 1.22 MB)Provides standard part quantities for shipping. CSN-04 03/2014 Customer Service Note
RMA Procedures for Packaged Product and Bare Die Devices: (PDF 76.22 KB)Outlines standard returned material authorization (RMA) procedures, as well as the differences associated with bare die RMAs. CSN-07 01/2014 Customer Service Note
Wafer Packaging and Packaging Materials: (PDF 591.42 KB)Provides complete shipping and recycling information about each of the materials used for shipping Micron's products. CSN-20 11/2013 Customer Service Note
Thermal Applications: (PDF 246.79 KB)Describes some considerations in thermal applications for Micron memory devices TN-00-08 07/2013 Technical Note
Moisture Absorption in Plastic Packages: (PDF 97.08 KB)Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture TN-00-01 02/2013 Technical Note
Micron Component and Module Packaging: (PDF 1.41 MB)Explanation of Micron packaging labels and procedures. CSN-16 01/2013 Customer Service Note
Micron BGA Manufacturer's User Guide: (PDF 388.76 KB)Provides information to enable customers to easily integrate both leading-edge and legacy Micron's ball grid array (BGA) packages into their manufacturing processes. It is intended as a set of high-level guidelines and a reference manual describing typical package-related and manufacturing process-flow practices. CSN-33 12/2012 Customer Service Note
Electronic Data Interchange: (PDF 52.45 KB)Describes EDI transmission sets, protocol, and contacts. CSN-06 11/2012 Customer Service Note
PCN/EOL Systems: (PDF 79.21 KB)Explains Micron's product change notification and end-of-life systems. CSN-12 04/2012 Customer Service Note
Lead Frame Package User Guidelines: (PDF 245.66 KB)Discusses Micron's lead-frame package options CSN-30 05/2011 Customer Service Note
ESD Precautions for Die/Wafer Handling and Assembly: (PDF 120.81 KB)Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs. CSN-24 08/2010 Customer Service Note
Micron KGD Definitions: (PDF 65.52 KB)Describes the testing specifications and parameters for Micron's KGD-C1 and KGD-C2 DRAM die. CSN-22 07/2009 Customer Service Note
Bare Die SiPs and MCMs: (PDF 151.06 KB)Describes design considerations for bare die SiPs and MCMs. CSN-18 04/2009 Customer Service Note

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For JS28F00AM29EWLA (5)
Title & Description Secure ID# Updated Type
M29EW_Verilog, 1Gb, 65nm, v1.3: (GZ 165.72 KB) 07/2014 Sim Model
M29EW_IBIS_1Gb_TSOP56_3.0-3.6V: (IBS 118.32 KB)IBIS model, 3.3 nominal voltage 07/2013 Sim Model
M29EW_IBIS, 1Gb, 65nm, TSOP56, 1.65-1.95V, v1.03: (IBS 116.94 KB) 10/2012 Sim Model
M29EW_IBIS, 1Gb, 65nm, TSOP56, 2.7-3.6V, v1.02: (IBS 116.94 KB) 02/2011 Sim Model
M29EW (32Mb, 64Mb, 128Mb, 256Mb, 512Mb, 1Gb, 2Gb) General Low-Level Driver: (ZIP 29.33 KB)General low-level driver for M29EW parallel NOR. Download the technical note for this driver here. Parallel NOR 07/2010 NOR Flash Software
For UDIMM (0)
Title & Description Secure ID# Updated Type
For DRAM Modules (0)
Title & Description Secure ID# Updated Type
For Products and Support (0)
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Disclaimers

  1. Micron Models: By downloading any Micron model from this site, you must agree to the terms of Micron's Simulation Models License Agreement. If you do not agree to terms, you do not have permission to use the site or download material from it.
  2. Non-Micron Models: For your convenience, Micron links to third-party simulation models. Note that Micron does not guarantee functionality or accuracy of these models.

UDIMM FAQs (2)

Can Vtt and Vref be supplied by the same supply in my system design?
With proper decoupling this can be an acceptable design. However, Micron recommends ensuring all supplies are separated. Vref tends to have more noise on it because it supplies signals that are regularly switching. A robust design would typically not connect these supplies due to the possibility of introducing this noise onto the Vtt plane which should be as stable as possible. Additionally, Vref requires much less current than Vtt.
Is there a set of trace lengths and routing rules that are standard for use when designing a system that uses a specific module technology and form factor?
No. A robust memory subsystem design that includes the use of 1 or more memory modules must be simulated in order to determine the optimum trace lengths, terminations. However, our design guides such as TN-47-01 and TN-41-08 have some best practices and design examples based on some typical system assumptions. This information is not meant to be the only way your system can be designed. It is a starting point and moreover an example of the steps used to determine the best design for your system.

DRAM Modules FAQs (5)

What is a "bank"?
A bank is an array of memory bits. Multiple arrays or banks are contained within a DRAM component. Depending on density, DRAM components may consist of 4 or 8 banks. For example, a bank may consist of 32 million rows, 4 bits across. This would equate to 128 megabits. Four of these banks in a single DRAM component would yield a 512Mb component.
What is the impedance tolerance of the driver in match-impedance mode relative to the expected value base on the perfect reference resistor connected to ZQ pin?
The impedance tolerance of the driver is ±15 percent.
Does thermal information change for IT parts?
Thermal information includes temperature limits and thermal impedance values. Temperature limits do change for IT parts (TC, TJ, and TA), but thermal impedance values (θJA, θJB, and θJC) do not because thermal impedance depends primarily on the package.
My design was based on a specification stating the JTAG was relative to VDD (1.8V), but now we’ve discovered that JTAG is actually relative to VDDQ (1.5V). It’s a fairly significant board spin to change this; what do I risk by leaving the design as-is? I assume that the specification is still for VDDQ + 0.3V = 1.8V, but with CMOS parts there’s no way I can guarantee that it won’t swing past that on transitions.
Your particular board design should not be a cause of major concern. The pins can handle the VDD voltage regardless of the VDDQ voltage.
Should the ECC memory chip share chip select and CKE signals with the other two main memory chips in our point-to-point application?
The ECC chip(s) should share the same CKE and CS# as the other devices because they are accessed as the same piece of data.

Products and Support FAQs (1)

Who do I contact if I have questions about my buymicron.com order?
If you have any questions about your order, contact buymicron.com.